Non-volatile optoelectronic memory based on a photosensitive dielectric.

Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm-2), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm-2, respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.

Universal radiation tolerant semiconductor.

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/ß) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the ß-to-γ Ga2O3 transformation, as a function of the increased disorder in ß-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/ß double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

Interplay of the disorder and strain in gallium oxide.

Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, of gallium oxide (Ga2O3) which is a promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between the disorder and strain in monoclinic ß-Ga2O3 single crystals by comparing atomic and cluster ion irradiations as well as atomic ions co-implants. The results obtained by a combination of the channeling technique, X-ray diffraction and theoretical calculations show that the disorder accumulation in ß-Ga2O3 exhibits superlinear behavior as a function of the collision cascade density. Moreover, the level of strain in the implanted region can be engineered by changing the disorder conditions in the near surface layer. The results can be used for better understanding of the radiation effects in ß-Ga2O3 and imply that disorder/strain interplay provides an additional degree of freedom to maintain desirable strain in Ga2O3, potentially applicable to modify the rate of the polymorphic transitions in this material.

Identification and Suppression of Majority Surface States in the Dry-Etched ß-Ga2O3.

Surface treatment after dry etching is vital to enhance the surface quality of the material and thus improve device performance. In this Letter, we identified the majority surface states induced by the dry etching of ß-Ga2O3 and optimized surface treatments to suppress these electrically active defects with the improved performance of Schottky barrier diodes. Transient spectroscopies suggested that the majority traps (EC-0.75 eV) related to divacancies (VGa-VO) were enhanced in the concentration of 3.37 × 1014 cm-3 by dry etching and reduced to 0.90 × 1014 cm-3 by the combined means of oxygen annealing and piranha solution treatment. The trap evolution is supported by the suppressed donor-acceptor pair radiative recombination related to oxygen vacancies, the improved carrier transport (negligible hysteresis current-voltage and unity ideality factor), and the reduced surface band bending. These findings provide a straightforward strategy to improve surface quality for the further performance improvement of Ga2O3 power diodes.

Yogic agnisara increases blood flow in the superior mesenteric artery.

OBJECTIVES: Medieval yoga texts claim that a special exercise of the muscles of the anterior abdominal wall, called agnisara, improves digestive function. Main objective of the study was to demonstrate change in the blood flow through superior mesenteric artery (if any) after performance of agnisara. METHODS: Ultrasound examination of the linear and volumetric indicators of blood flow in the superior mesenteric artery (SMA) before and after performing the agnisara yoga exercise 100 times was carried out in 12 healthy volunteers of both sexes (8 of them women). RESULTS: A significant increase in the diameter of the SMA, peak systolic and diastolic velocities, and blood flow in the superior mesenteric artery after performing the agnisara exercise 100 times was found, which contrasts with the established data on a decrease in splanchnic blood flow in humans in response to normal physical activity. CONCLUSION: Properly performed agnisara increases blood flow to the splanchnic region, registered by the SMA, which should contribute to adequate blood supply to the gastrointestinal tract for successful performance of digestive function.

Disorder-Induced Ordering in Gallium Oxide Polymorphs.

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure and strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of the lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga_{2}O_{3} and, potentially, for similar polymorphic families in other materials.

Formation of N2 bubbles along grain boundaries in (ZnO)1-x(GaN)x: nanoscale STEM-EELS studies.

Direct evidence of N2 formation after annealing of (ZnO)1-x(GaN)x alloys was revealed. N2 was trapped by VZn+Ga-clusters, forming faceted voids along grain boundaries. This study shows that N-N bonding is a competitive path for nitrogen after annealing, in addition to the increasing Ga-N bonds, indicating that N in O substitution sites (NO) is not a stable configuration.

Role of Nitrogen in Defect Evolution in Zinc Oxide: STEM-EELS Nanoscale Investigations.

Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been revealed by an atomically resolved scanning transmission electron microscopy (STEM)-electron energy-loss spectroscopy (EELS) investigation. Taking advantage of the possibility of using multiple detectors simultaneously in aberration-corrected STEM, we utilize the detailed correlation between the atomic structure and chemical identification to develop a model explaining the formation and evolution of different defect types and their interaction with N. In particular, the formation of zinc vacancy (VZn) clusters filled with N2 after heat treatment at 650 °C was observed, clearly indicating that N has not been stabilized in the O substitution site, thus limiting p-type doping. Previous results showing an exceptional thermal stability of vacancy clusters only for the case of N-doped ZnO are supported. Furthermore, VZn-N2 stabilization leads to suppression of VZn-Zni recombination; hence, the highly mobile Zn interstitials preferentially condense on the basal planes promoting formation of extended defects (basal stacking faults and stacking mismatched boundaries). The terminations of these defects provide energetically favorable sites for further N2 trapping as a way to reduce local strain fields.

Band gap maps beyond the delocalization limit: correlation between optical band gaps and plasmon energies at the nanoscale.

Recent progresses in nanoscale semiconductor technology have heightened the need for measurements of band gaps with high spatial resolution. Band gap mapping can be performed through a combination of probe-corrected scanning transmission electron microscopy (STEM) and monochromated electron energy-loss spectroscopy (EELS), but are rare owing to the complexity of the experiments and the data analysis. Furthermore, although this method is far superior in terms of spatial resolution to any other techniques, it is still fundamentally resolution-limited due to inelastic delocalization of the EELS signal. In this work we have established a quantitative correlation between optical band gaps and plasmon energies using the Zn1-xCd x O/ZnO system as an example, thereby side-stepping the fundamental resolution limits of band gap measurements, and providing a simple and convenient approach to achieve band gap maps with unprecedented spatial resolution.

Micro-structured inverted pyramid texturization of Si inspired by self-assembled Cu nanoparticles.

A superior micron-sized inverted pyramid structure has been successfully achieved by one-step copper nanoparticles assisted chemical etching in Si/Cu(NO3)2/HF/H2O2 solution for light trapping in silicon solar cells. The detailed mechanisms of such a novel method have been systematically demonstrated. The charge transfer during the reaction has been revealed by the simplified energy band diagram of the system as well. In order to form micro-structured inverted pyramids, the generation and dissolution of Cu nanoparticles should keep in balance during the reaction, which depends on the concentration of the etchant, the doping type and the doping level of the silicon substrate. With the investigation of the intrinsic properties of the silicon substrate, the etching rate is found out as a combined result of the electron concentration and the defect density of the substrate, as well as the potential barrier on the interface of Si/Cu nanoparticles. Furthermore, the anisotropic nature of Cu assisted chemical etching has also been investigated.

Interface Engineering of High Efficiency Organic-Silicon Heterojunction Solar Cells.

Insufficient interface conformity is a challenge faced in hybrid organic-silicon heterojunction solar cells because of using conventional pyramid antireflection texturing provoking the porosity of interface. In this study, we tested alternative textures, in particular rounded pyramids and inverted pyramids to compare the performance. It was remarkably improved delivering 7.61%, 8.91% and 10.04% efficiency employing conventional, rounded, and inverted pyramids, respectively. The result was interpreted in terms of gradually improving conformity of the Ag/organic/silicon interface, together with the gradually decreasing serial resistance. Altogether, the present data may guide further efforts arising the interface engineering for mastering high efficient heterojunction solar cells.

Fluorine doping: a feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components.

N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. Herein, we report a solution to enhancing the conductivity of high-resistance Mg0.51Zn0.49O active components, which has been reliably achieved by fluorine doping via radio-frequency plasma assisted molecular beam epitaxial growth. Fluorine dopants were demonstrated to be effective donors in Mg0.51Zn0.49O single crystal film having a solar-blind 4.43 eV bandgap, with an average concentration of 1.0 × 10(19) F/cm(3).The dramatically increased carrier concentration (2.85 × 10(17) cm(-3) vs ~10(14) cm(-3)) and decreased resistivity (129 Ω · cm vs ~10(6) Ω cm) indicate that the electrical properties of semi-insulating Mg0.51Zn0.49O film can be delicately regulated by F doping. Interestingly, two donor levels (17 meV and 74 meV) associated with F were revealed by temperature-dependent Hall measurements. A Schottky type metal-semiconductor-metal ultraviolet photodetector manifests a remarkably enhanced photocurrent, two orders of magnitude higher than that of the undoped counterpart. The responsivity is greatly enhanced from 0.34 mA/W to 52 mA/W under 10 V bias. The detectivity increases from 1.89 × 10(9) cm Hz(1/2)/W to 3.58 × 10(10) cm Hz(1/2)/W under 10 V bias at room temperature.These results exhibit F doping serves as a promising pathway for improving the performance of high-Mg-content MgxZn1-xO-based devices.

Maskless inverted pyramid texturization of silicon.

We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.

Probing defects in nitrogen-doped Cu2O.

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

Influence of graphene synthesizing techniques on the photocatalytic performance of graphene-TiO2 nanocomposites.

Model photocatalysts composed of TiO2-graphene nanocomposites are prepared to address the effect of graphene quality on their photocatalytic performance. Graphene is synthesized by catalyst-assisted chemical vapor deposition (CVD), catalyst-free CVD and solution processing methods. TiO2 is prepared by reactive magnetron sputtering and subsequent annealing. Fabricated model photocatalysts have different morphology and physical properties, as revealed using spectrophotometry, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence, and four-probe electrical measurements. All graphene-containing composites have significantly higher photocatalytic activity compared to bare TiO2 films in the gas phase methanol photooxidation tests. Their activity is proportional to the electrical conductivity and surface roughness of the respective carbon structure, which in turn depends on the preparation methods. The mechanisms of enhancement are further assessed by comparison with the performance of reference TiO2-graphitic-carbon and TiO2-Au thin films.

Intrinsic point-defect balance in self-ion-implanted ZnO.

The role of excess intrinsic atoms for residual point defect balance has been discriminated by implanting Zn or O ions into Li-containing ZnO and monitoring Li redistribution and electrical resistivity after postimplant anneals. Strongly Li-depleted regions were detected in the Zn-implanted samples at depths beyond the projected range (R(p)) upon annealing ≥ 600 °C, correlating with a resistivity decrease. In contrast, similar anneals of the O-implanted samples resulted in Li accumulation at R(p) and an increased resistivity. Control samples implanted with Ar or Ne ions, yielding similar defect production as for the Zn or O implants but with no surplus of intrinsic atoms, revealed no Li depletion. Thus, the depletion of Li shows evidence of excess Zn interstitials (Zn(I)) being released during annealing of the Zn-implanted samples. These Zn(I)'s convert substitutional Li atoms (Li(Zn)) into highly mobile interstitial ones leading to the strongly Li-depleted regions. In the O-implanted samples, the high resistivity provides evidence of stable O(I)-related acceptors.

Nanostructure formation and passivation of large-area black silicon for solar cell applications.

Nanoscale textured silicon and its passivation are explored by simple low-cost metal-assisted chemical etching and thermal oxidation, and large-area black silicon was fabricated both on single-crystalline Si and multicrystalline Si for solar cell applications. When the Si surface was etched by HF/AgNO(3) solution for 4 or 5 min, nanopores formed in the Si surface, 50-100 nm in diameter and 200-300 nm deep. The nanoscale textured silicon surface turns into an effective medium with a gradually varying refractive index, which leads to the low reflectivity and black appearance of the samples. Mean reflectance was reduced to as low as 2% for crystalline Si and 4% for multicrystalline Si from 300 to 1000 nm, with no antireflective (AR) coating. A black-etched multicrystalline-Si of 156 mm × 156 mm was used to fabricate a primary solar cell with no surface passivation or AR coating. Its conversion efficiency (η) was 11.5%. The cell conversion efficiency was increased greatly by using surface passivation process, which proved very useful in suppressing excess carrier recombination on the nanostructured surface. Finally, a black m-Si cell with efficiency of 15.8% was achieved by using SiO(2) and SiN(X) bilayer passivation structure, indicating that passivation plays a key role in large-scale manufacture of black silicon solar cells.