ABSTRACT
Maintaining both high sensitivity and large figure of merit (FoM) is crucial in regard to the performance of optical devices, particularly when they are intended for use as biosensors with extremely low limit of detection (LoD). Here, a stack of nano-assembled layers in the form of 1D photonic crystal, deposited on D-shaped single-mode fibers, is created to meet these criteria, resulting in the generation of Bloch surface wave resonances. The increase in the contrast between high and low refractive index (RI) nano-layers, along with the reduction of losses, enables not only to achieve high sensitivity, but also a narrowed resonance bandwidth, leading to a significant enhancement in the FoM. Preliminary testing for bulk RI sensitivity is carried out, and the effect of an additional nano-layer that mimics a biological layer where binding interactions occur is also considered. Finally, the biosensing capability is assessed by detecting immunoglobulin G in serum at very low concentrations, and a record LoD of 70 aM is achieved. An optical fiber biosensor that is capable of attaining extraordinarily low LoD in the attomolar range is not only a remarkable technical outcome, but can also be envisaged as a powerful tool for early diagnosis of diseases.
ABSTRACT
Devices based on the lossy mode resonance (LMR) effect have found numerous sensing applications. Herein, the enhancement of the sensing properties by the introduction of an intermediate layer between the substrate and the LMR-supporting film is discussed. Experimental results for a silicon oxide (SiO2) layer of tuned thickness between a glass slide substrate and a thin film of titanium oxide (TiO2) prove the possibility of significantly increasing the LMR depth and the figure of merit (FoM) for refractive index sensing applications, which is supported by a numerical analysis using the plane wave method for a one-dimensional multilayer waveguide. The application of the intermediate layer allows the introduction of a new, to the best of our knowledge, degree of freedom into the design of LMR-based sensors, resulting in improved performance for demanding fields such as chemical sensing or biosensing.
Subject(s)
Biosensing Techniques , Refractometry , Silicon DioxideABSTRACT
In this paper we investigate influence of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) process parameters, which include gas flows, pressure and temperature, as well as a way of sample placement in the reactor, on optical properties and deposition rate of silicon nitride (SiNx) thin films. The influence of the process parameters has been determined using Taguchi's orthogonal tables approach. As a result of elevating samples above the electrode, it has been found that deposition rate strongly increases with distance between sample and the stage electrode, and reaches its maximum 7 mm above the electrode. Moreover, the refractive index of the films follows increase of the thickness. The effect can be observed when the thickness of the film is below 80 nm. It has been also found that when the deposition temperature is reduced down to 200 °C, as required for many temperature-sensitive substrate materials, the influence of the substrate material (Si or oxidized Si) can be neglected from the point of view of the properties of the films. We believe that the obtained results may help in designing novel complex in shape devices, where optical properties and thickness of thin plasma-deposited coatings need to be well defined.
ABSTRACT
The surface resistance of Ag, Au and A1 thin conducting films deposited on low loss dielectric substrates at microwave frequencies using TE011 mode single post-dielectric resonator (10-13.22 GHz) was measured to calculate their conductivity in relation to layers thickness. This method enabling measurements near metal-insulator percolation transition was also applied for epitaxial graphene deposited on semi-insulating SiC. Moreover, effective microwave conductivity has been determined for intentionally made aluminum island structure where the DC conductivity is equal to zero. Special attention was paid to films thickness measurements which is critical for accuracy of sheet resistance calculation. Conductivity of thin metal layers and very thin graphene was compared.
