Annealing Effects on SnO2 Thin Film for H2 Gas Sensing.

Hydrogen (H2) is attracting attention as a renewable energy source in various fields. However, H2 has a potential danger that it can easily cause a backfire or explosion owing to minor external factors. Therefore, H2 gas monitoring is significant, particularly near the lower explosive limit. Herein, tin dioxide (SnO2) thin films were annealed at different times. The as-obtained thin films were used as sensing materials for H2 gas. Here, the performance of the SnO2 thin film sensor was studied to understand the effect of annealing and operating temperature conditions of gas sensors to further improve their performance. The gas sensing properties exhibited by the 3-h annealed SnO2 thin film showed the highest response compared to the unannealed SnO2 thin film by approximately 1.5 times. The as-deposited SnO2 thin film showed a high response and fast response time to 5% H2 gas at 300 °C of 257.34% and 3 s, respectively.

An Organic/Inorganic Nanomaterial and Nanocrystal Quantum Dots-Based Multi-Level Resistive Memory Device.

A cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dot (QD)-based multi-level memory device with the structure [ITO/PEDOT:PSS/QDs/ZnO/Al:Al2O3/QDs/Al] was fabricated via a spin-coating method used to deposit thin films. Two layers of QD thin films present in the device act as charge storage layers to form three distinct states. Zinc oxide (ZnO) and aluminum oxide (Al2O3) were added to prevent leakage. ZnO NPs provide orthogonality between the two QD layers, and a poly(3,4-ethylenedioxythio-phene): poly(styrenesulfonate) (PEDOT:PSS) thin film was formed for effective hole injection from the electrodes. The core/shell structure of the QDs provides the quantum well, which causes the trapping of injected charges. The resistance changes according to the charging and discharging of the QDs' trap site and, as a result, the current through the device also changes. There are two quantum wells, two current changes, and three stable states. The role of each thin film was confirmed through I-V curve analysis and the fabrication conditions of each thin film were optimized. The synthesized QDs and ZnO nanoparticles were evaluated via X-ray diffraction, transmission electron microscopy, and absorbance and photoluminescence spectroscopy. The measured write voltages of the fabricated device were at 1.8 and 2.4 V, and the erase voltages were -4.05 and -4.6 V. The on/off ratio at 0.5 V was 2.2 × 103. The proposed memory device showed retention characteristics of ≥100 h and maintained the initial write/erase voltage even after 200 iterative operations.

Miniaturized Portable Total Phosphorus Analysis Device Based on Photocatalytic Reaction for the Prevention of Eutrophication.

Phosphorus (P) is one of the most important elements in the aquatic ecosystem, but its overuse causes eutrophication, which is a serious issue worldwide. In this study, we developed a miniaturized portable total phosphorus (TP) analysis device by integrating a TP sensor with a photocatalyst to pretreat analyte and optical components (LED and photodetector) to measure the absorbance of the blue-colored analyte for real-time TP monitoring and prevention of eutrophication. The size of the miniaturized portable TP analysis device is about 10.5 cm × 9.5 cm × 8 cm. Analyte-containing phosphorus was pretreated and colored blue by colorizing agent as a function of the phosphorus concentration. Absorbance of the blue-colored analyte was estimated by the LED and the photodetector such that the phosphorus concentration was quantitatively measured. This device can obtain a wide linear response range from 0.5 mg/L to 2.0 mg/L (R2 = 0.97381), and its performance can be improved by increasing the intensity of the UV light emitted from the LED array. Consequently, the performance of this miniaturized portable TP analysis device was found to be similar to that of a conventional TP analysis system; thus, it can be used in automated in situ TP analysis.

Air-stable and ultrasensitive solution-cast SWIR photodetectors utilizing modified core/shell colloidal quantum dots.

InGaAs-based photodetectors have been generally used for detection in the short-wave infrared (SWIR) region. However, the epitaxial process used to grow these materials is expensive; therefore, InGaAs-based photodetectors are limited to space exploration and military applications. Many researchers have expended considerable efforts to address the problem of SWIR photodetector development using lead sulfide (PbS) quantum dots (QDs). Along with their cost-efficient solution processability and flexible substrate compatibility, PbS QDs are highly interesting for the quantum-size-effect tunability of their bandgaps, spectral sensitivities, and wide absorption ranges. However, the performance of PbS QD-based SWIR photodetectors is limited owing to inefficient carrier transfer and low photo and thermal stabilities. In this study, a simple method is proposed to overcome these problems by incorporating CdS in PbS QD shells to provide efficient carrier transfer and enhance the long-term stability of SWIR photodetectors against oxidation. The SWIR photodetectors fabricated using thick-shell PbS/CdS QDs exhibited a high on/off (light/dark) ratio of 11.25 and a high detectivity of 4.0 × 1012 Jones, which represents a greater than 10 times improvement in these properties relative to those of PbS QDs. Moreover, the lifetimes of thick-shell PbS/CdS QD-based SWIR photodetectors were significantly improved owing to the self-passivation of QD surfaces.

Effect of PVP-Capped ZnO Nanoparticles with Enhanced Charge Transport on the Performance of P3HT/PCBM Polymer Solar Cells.

We attempted surface modification in ZnO nanoparticles (NPs) synthesized by the sol-gel process with polyvinyl pyrrolidone (PVP) applied to bulk-heterojunction polymer solar cells (PSCs) as an electron transport layer (ETL). In general, ZnO NPs have trap sites due to oxygen vacancies which capture electrons and degrade the performance of the PSCs. Devices with six different PVP:Zn ratios (0.615 g, 1.230 g, 1.846 g, 2.460 g, 3.075 g, and 3.690 g) were fabricated for surface modification, and the optimized PVP:Zn ratio (2.460 g) was found for PSCs based on P3HT/PCBM. The power conversion efficiency (PCE) of the fabricated PSCs with PVP-capped ZnO exhibited a significant increase of approximately 21% in PCE and excellent air-stability as compared with the uncapped ZnO-based PSCs.

Uncooled Short-Wave Infrared Sensor Based on PbS Quantum Dots Using ZnO NPs.

Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current-voltage (I-V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs' high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.

Al atomistic surface modulation on colloidal gradient quantum dots for high-brightness and stable light-emitting devices.

Quantum-dot (QD) light-emitting devices (QLEDs) have been attracting considerable attention owing to the unique properties of process, which can control the emission wavelength by controlling the particle size, narrow emission bandwidth, and high brightness. Although there have been rapid advances in terms of luminance and efficiency improvements, the long-term device stability is limited by the low chemical stability and photostability of the QDs against moisture and air. In this study, we report a simple method, which can for enhance the long-term stability of QLEDs against oxidation by inserting Al into the shells of CdSe/ZnS QDs. The Al coated on the ZnS shell of QDs act as a protective layer with Al2O3 owing to photo-oxidation, which can prevents the photodegradation of QD with prolonged irradiation and stabilize the device during a long-term operation. The QLEDs fabricated using CdSe/ZnS/Al QDs exhibited a maximum luminance of 57,580 cd/m2 and current efficiency of 5.8 cd/A, which are significantly more than 1.6 times greater than that of CdSe/ZnS QDs. Moreover, the lifetimes of the CdSe/ZnS/Al-QD-based QLEDs were significantly improved owing to the self-passivation at the QD surfaces.

Improving Air-Stability and Performance of Bulk Heterojunction Polymer Solar Cells Using Solvent Engineered Hole Selective Interlayer.

In bulk heterojunction polymer solar cells (BHJ-PSCs), poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) is the most commonly used hole selective interlayer (HSIL). However, its acidity, hygroscopic nature, and the use of indium tin oxide (ITO) etching can degrade the overall photovoltaic performance and the air-stability of BHJ-PSCs. Solvent engineering is considered as a facile approach to overcome these issues. In this work, we engineered the HSIL using ethanol (ET) treated PEDOT:PSS to simultaneously enhance the photovoltaic performance properties and air-stability of the fabricated devices. We systematically investigated the influence of ET on the microstructural, morphological, interfacial characteristics of modified HSIL and photovoltaic characteristics of BHJ-PSCs. Compared with the BHJ-PSC with pristine PEDOT:PSS, a significant enhancement of power conversion efficiency (~17%) was witnessed for the BHJ-PSC with PEDOT:PSS-ET (v/v, 1:0.5). Consequently, the BHJ-PSC with PEDOT:PSS-ET (v/v, 1:0.5) as HSIL exhibited remarkably improved air-stability.

Easy-to-Fabricate and High-Sensitivity LSPR Type Specific Protein Detection Sensor Using AAO Nano-Pore Size Control.

In this study, we developed a pore size/pore area-controlled optical biosensor-based anodic aluminum oxide (AAO) nanostructure. As the pore size of AAO increases, the unit cell of AAO increases, which also increases the non-pore area to which the antibody binds. The increase in the number of antibodies immobilized on the surface of the AAO enables effective detection of trace amounts of antigen, because increased antigen-antibody bonding results in a larger surface refractive index change. High sensitivity was thus achieved through amplification of the interference wave of two vertically-incident reflected waves through the localized surface plasmon resonance phenomenon. The sensitivity of the fabricated sensor was evaluated by measuring the change in wavelength with the change in the refractive index of the device surface, and sensitivity was increased with increasing pore-size and non-pore area. The sensitivity of the fabricated sensor was improved and up to 11.8 ag/mL serum amyloid A1 antigen was detected. In addition, the selectivity of the fabricated sensor was confirmed through a reaction with a heterogeneous substance, C-reactive protein antigen. By using hard anodization during fabrication of the AAO, the fabrication time of the device was reduced and the AAO chip was fabricated quickly and easily.

Functional solid additive modified PEDOT:PSS as an anode buffer layer for enhanced photovoltaic performance and stability in polymer solar cells.

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is most commonly used as an anode buffer layer in bulk-heterojunction (BHJ) polymer solar cells (PSCs). However, its hygroscopic and acidic nature contributes to the insufficient electrical conductivity, air stability and restricted photovoltaic (PV) performance for the fabricated PSCs. In this study, a new multifunctional additive, 2,3-dihydroxypyridine (DOH), has been used in the PEDOT: PSS buffer layer to obtain modified properties for PEDOT: PSS@DOH and achieve high PV performances. The electrical conductivity of PEDOT:PSS@DOH films was markedly improved compared with that of PEDOT:PSS. The PEDOT:PSS@DOH film exhibited excellent optical characteristics, appropriate work function alignment, and good surface properties in BHJ-PSCs. When a poly(3-hexylthiohpene):[6,6]-phenyl C61-butyric acid methyl ester blend system was applied as the photoactive layer, the power conversion efficiency of the resulting PSCs with PEDOT:PSS@DOH(1.0%) reached 3.49%, outperforming pristine PEDOT:PSS, exhibiting a power conversion enhancement of 20%. The device fabricated using PEDOT:PSS@DOH (1.0 wt%) also exhibited improved thermal and air stability. Our results also confirm that DOH, a basic pyridine derivative, facilitates adequate hydrogen bonding interactions with the sulfonic acid groups of PSS, induces the conformational transformation of PEDOT chains and contributes to the phase separation between PEDOT and PSS chains.