Recent Advances in Water-Splitting Electrocatalysts Based on Electrodeposition.

Green hydrogen is being considered as a next-generation sustainable energy source. It is created electrochemically by water splitting with renewable electricity such as wind, geothermal, solar, and hydropower. The development of electrocatalysts is crucial for the practical production of green hydrogen in order to achieve highly efficient water-splitting systems. Due to its advantages of being environmentally friendly, economically advantageous, and scalable for practical application, electrodeposition is widely used to prepare electrocatalysts. There are still some restrictions on the ability to create highly effective electrocatalysts using electrodeposition owing to the extremely complicated variables required to deposit uniform and large numbers of catalytic active sites. In this review article, we focus on recent advancements in the field of electrodeposition for water splitting, as well as a number of strategies to address current issues. The highly catalytic electrodeposited catalyst systems, including nanostructured layered double hydroxides (LDHs), single-atom catalysts (SACs), high-entropy alloys (HEAs), and core-shell structures, are intensively discussed. Lastly, we offer solutions to current problems and the potential of electrodeposition in upcoming water-splitting electrocatalysts.

Multicomponent Metal Oxide- and Metal Hydroxide-Based Electrocatalysts for Alkaline Water Splitting.

Developing cost-effective, highly catalytic active, and stable electrocatalysts in alkaline electrolytes is important for the development of highly efficient anion-exchange membrane water electrolysis (AEMWE). To this end, metal oxides/hydroxides have attracted wide research interest for efficient electrocatalysts in water splitting owing to their abundance and tunable electronic properties. It is very challenging to achieve an efficient overall catalytic performance based on single metal oxide/hydroxide-based electrocatalysts due to low charge mobilities and limited stability. This review is mainly focused on the advanced strategies to synthesize the multicomponent metal oxide/hydroxide-based materials that include nanostructure engineering, heterointerface engineering, single-atom catalysts, and chemical modification. The state of the art of metal oxide/hydroxide-based heterostructures with various architectures is extensively discussed. Finally, this review provides the fundamental challenges and perspectives regarding the potential future direction of multicomponent metal oxide/hydroxide-based electrocatalysts.

Atomically dispersed iridium catalysts on silicon photoanode for efficient photoelectrochemical water splitting.

Stabilizing atomically dispersed single atoms (SAs) on silicon photoanodes for photoelectrochemical-oxygen evolution reaction is still challenging due to the scarcity of anchoring sites. Here, we elaborately demonstrate the decoration of iridium SAs on silicon photoanodes and assess the role of SAs on the separation and transfer of photogenerated charge carriers. NiO/Ni thin film, an active and highly stable catalyst, is capable of embedding the iridium SAs in its lattices by locally modifying the electronic structure. The isolated iridium SAs enable the effective photogenerated charge transport by suppressing the charge recombination and lower the thermodynamic energy barrier in the potential-determining step. The Ir SAs/NiO/Ni/ZrO2/n-Si photoanode exhibits a benchmarking photoelectrochemical performance with a high photocurrent density of 27.7 mA cm-2 at 1.23 V vs. reversible hydrogen electrode and 130 h stability. This study proposes the rational design of SAs on silicon photoelectrodes and reveals the potential of the iridium SAs to boost photogenerated charge carrier kinetics.

Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2.

Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices.

Tailoring the coercive field in ferroelectric metal-free perovskites by hydrogen bonding.

The miniaturization of ferroelectric devices in non-volatile memories requires the device to maintain stable switching behavior as the thickness scales down to nanometer scale, which requires the coercive field to be sufficiently large. Recently discovered metal-free perovskites exhibit advantages such as structural tunability and solution-processability, but they are disadvantaged by a lower coercive field compared to inorganic perovskites. Herein, we demonstrate that the coercive field (110 kV/cm) in metal-free ferroelectric perovskite MDABCO-NH4-(PF6)3 (MDABCO = N-methyl-N'-diazabicyclo[2.2.2]octonium) is one order larger than MDABCO-NH4-I3 (12 kV/cm) owing to the stronger intermolecular hydrogen bonding in the former. Using isotope experiments, the ferroelectric-to-paraelectric phase transition temperature and coercive field are verified to be strongly influenced by hydrogen bonds. Our work highlights that the coercive field of organic ferroelectrics can be tailored by tuning the strength of hydrogen bonding.

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing.

Two-dimensional (2D) transition metal chalcogenides (TMC) and their heterostructures are appealing as building blocks in a wide range of electronic and optoelectronic devices, particularly futuristic memristive and synaptic devices for brain-inspired neuromorphic computing systems. The distinct properties such as high durability, electrical and optical tunability, clean surface, flexibility, and LEGO-staking capability enable simple fabrication with high integration density, energy-efficient operation, and high scalability. This review provides a thorough examination of high-performance memristors based on 2D TMCs for neuromorphic computing applications, including the promise of 2D TMC materials and heterostructures, as well as the state-of-the-art demonstration of memristive devices. The challenges and future prospects for the development of these emerging materials and devices are also discussed. The purpose of this review is to provide an outlook on the fabrication and characterization of neuromorphic memristors based on 2D TMCs.

Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template.

Two-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S-O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S-O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S-O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

Self-Powered Photodetector Using Two-Dimensional Ferroelectric Dion-Jacobson Hybrid Perovskites.

Dion-Jacobson (DJ) phase organic-inorganic hybrid perovskites (OIHPs) have emerged as promising alternatives to Ruddlesden-Poppers perovskites because of their chemical stability and ferroelectric phase. Here we fabricate a ferroelectricity-modulated photodetector based on the n = 2 homologue of the ferroelectric two-dimensional DJ-OIHP (AMP)(MA)Pb2I7 (DJPn=2, AMP = 4-(aminomethyl)piperidinium; MA = methylammonium), which shows an out-of-plane polarization and a saturated polarization (Ps) value of 3.7 µC/cm2. The coercive field of DJPn=2 (0.34 kV/cm) is lower than that for the n = 1 homologue (AMP)PbI4 (DJPn=1,0.4 kV/cm). DJPn=2 has a much longer carrier lifetime and absorption edge (580 nm, 2.13 eV) in comparison to DJPn=1 (523 nm, 2.37 eV); thus, DJPn=2 can be used for efficient photodetection in the visible range, in which a responsivity of 0.16 mA/W was achieved at 532 nm. The influence of remnant polarization on the direction and magnitude of the photocurrent was also demonstrated.

In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device.

Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density device integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue synaptic device, whereas thicker films have a much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers. The SnS ferroelectric device exhibits synaptic behaviors with highly stable room-temperature operation, high linearity in potentiation/depression, long retention, and low cycle-to-cycle/device-to-device variations. The simulated device based on ferroelectric SnS achieves ∼92.1% pattern recognition accuracy in an artificial neural network simulation. By switching the ferroelectric domains partially, multilevel conductance states and the conductance ratio can be obtained, achieving high pattern recognition accuracy.

Ferroelectricity and Rashba Effect in a Two-Dimensional Dion-Jacobson Hybrid Organic-Inorganic Perovskite.

Hybrid organic-inorganic perovskites (HOIPs) are a new generation of high-performance materials for solar cells and light emitting diodes. Beyond these applications, ferroelectricity and spin-related properties of HOIPs are increasingly attracting interests. The presence of strong spin-orbit coupling, allied with symmetry breaking ensured by remanent polarization, should give rise to Rashba-type splitting of electronic bands in HOIP. However, the report of both ferroelectricity and Rashba effect in HOIP is rare. Here we report the observation of robust ferroelectricity and Rashba effect in two-dimensional Dion-Jacobson perovskites.

Water Splitting Exceeding 17% Solar-to-Hydrogen Conversion Efficiency Using Solution-Processed Ni-Based Electrocatalysts and Perovskite/Si Tandem Solar Cell.

Various noble metal-free electrocatalysts have been explored to enhance the overall water splitting efficiency. Ni-based compounds have attracted substantial attention for achieving efficient oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) catalysts. Here, we show superior electrocatalysts based on NiFe alloy electroformed by a roll-to-roll process. NiFe (oxy)hydroxide synthesized by an anodization method for the OER catalyst shows an overpotential of 250 mV at 10 mA cm-2, which is dramatically smaller than that of bare NiFe alloy with an overpotential of 380 mV at 10 mA cm-2. Electrodeposited NiMo films for the HER catalyst also exhibit a small overpotential of 100 mV at 10 mA cm-2 compared with that of bare NiFe alloy (550 mV at 10 mA cm-2). A combined spectroscopic and electrochemical analysis reveals a clear relationship between the surface chemistry of NiFe (oxy)hydroxide and the water splitting properties. These outstanding fully solution-processed catalysts facilitate superb overall water splitting properties due to enlarged active surfaces and highly active catalytic properties. We combined a solution-processed monolithic perovskite/Si tandem solar cell with MAPb(I0.85Br0.15)3 for the direct conversion of solar energy into hydrogen energy, leading to the high solar-to-hydrogen efficiency of 17.52%. Based on the cost-effective solution processes, our photovoltaic-electrocatalysis (PV-EC) system has advantages over latest high-performance solar water splitting systems.

Two-Dimensional NbS2 Gas Sensors for Selective and Reversible NO2 Detection at Room Temperature.

Transition metal dichalcogenides (TMDs) have attracted enormous attention in diverse research fields. Especially, gas sensors are considered in a promising application exploiting TMDs. However, the studies are confined to only major TMDs such as MoS2 and WS2. Particularly, the chemoresistive sensing properties of two-dimensional (2D) NbS2 have never been explored. For the first time, we report room temperature NO2 sensing characteristics of 2D NbS2 nanosheets and the sensing mechanisms using first-principles calculations based on density functional theory. The results demonstrate that the NbS2 edges possessing different configurations depending on synthetic conditions differ in the sensing ability of the TMD nanosheets. This study not only broadens the potential of 2D NbS2 for gas sensing applications, but also presents the important role of edge configuration of TMDs depending on synthetic conditions for further studies.

SnS2 Nanograins on Porous SiO2 Nanorods Template for Highly Sensitive NO2 Sensor at Room Temperature with Excellent Recovery.

In order to develop high performance chemoresistive gas sensors for Internet of Everything applications, low power consumption should be achieved due to the limited battery capacity of portable devices. One of the most efficient ways to reduce power consumption is to lower the operating temperature to room temperature. Herein, we report superior gas sensing properties of SnS2 nanograins on SiO2 nanorods toward NO2 at room temperature. The gas response is as high as 701% for 10 ppm of NO2 with excellent recovery characteristics and the theoretical detection limit is evaluated to be 408.9 ppb at room temperature, which has not been reported for SnS2-based gas sensors to the best of our knowledge. The SnS2 nanograins on the template used in this study have excessive sulfur component (Sn:S = 1:2.33) and exhibit p-type conduction behavior. These results will provide a new perspective of nanostructured two-dimensional materials for gas sensor applications on demand.

Efficient Water Splitting Cascade Photoanodes with Ligand-Engineered MnO Cocatalysts.

The band edge positions of semiconductors determine functionality in solar water splitting. While ligand exchange is known to enable modification of the band structure, its crucial role in water splitting efficiency is not yet fully understood. Here, ligand-engineered manganese oxide cocatalyst nanoparticles (MnO NPs) on bismuth vanadate (BiVO4) anodes are first demonstrated, and a remarkably enhanced photocurrent density of 6.25 mA cm-2 is achieved. It is close to 85% of the theoretical photocurrent density (≈7.5 mA cm-2) of BiVO4. Improved photoactivity is closely related to the substantial shifts in band edge energies that originate from both the induced dipole at the ligand/MnO interface and the intrinsic dipole of the ligand. Combined spectroscopic analysis and electrochemical study reveal the clear relationship between the surface modification and the band edge positions for water oxidation. The proposed concept has considerable potential to explore new, efficient solar water splitting systems.

Synthesis of Numerous Edge Sites in MoS2 via SiO2 Nanorods Platform for Highly Sensitive Gas Sensor.

The utilization of edge sites in two-dimensional materials including transition-metal dichalcogenides (TMDs) is an effective strategy to realize high-performance gas sensors because of their high catalytic activity. Herein, we demonstrate a facile strategy to synthesize the numerous edge sites of vertically aligned MoS2 and larger surface area via SiO2 nanorod (NRs) platforms for highly sensitive NO2 gas sensor. The SiO2 NRs encapsulated by MoS2 film with numerous edge sites and partially vertical-aligned regions synthesized using simple thermolysis process of [(NH4)2MoS4]. Especially, the vertically aligned MoS2 prepared on 500 nm thick SiO2 NRs (500MoS2) shows approximately 90 times higher gas-sensing response to 50 ppm NO2 at room temperature than the MoS2 film prepared on flat SiO2, and the theoretical detection limit is as low as ∼2.3 ppb. Additionally, it shows reliable operation with reversible response to NO2 gas without degradation at an operating temperature of 100 °C. The use of the proposed facile approach to synthesize vertically aligned TMDs using nanostructured platform can be extended for various TMD-based devices including sensors, water splitting catalysts, and batteries.

Enhanced nucleation of germanium on graphene via dipole engineering.

The preparation of crystalline materials on incommensurate substrates has been a key topic of epitaxy. van der Waals (vdW) epitaxy on two-dimensional (2D) materials opened novel opportunities of epitaxial growth overcoming the materials compatibility issue. Therefore, vdW epitaxy has been considered as a promising approach for the preparation of building blocks of flexible devices and thin film-based devices at the nano/microscale. However, an understanding of vdW epitaxy has not been thoroughly established. Especially, controlling nucleation during vdW epitaxy has not been achieved although nucleation in vdW epitaxy is suppressed due to the absence of surface dangling bonds on 2D materials. Here we show an enhancement of nucleation probability of germanium on graphene via introducing an out-of-plane dipole moment without any change in the chemical nature of graphene. A graphene/hexagonal boron nitride stack and transferred graphene on a polarized ferroelectric thin film were employed to demonstrate the significant enhancement of Ge nucleation on graphene. Theoretical calculations and chemical vapor deposition were employed to elucidate the effect of the out-of-plane dipole moment on nucleation in vdW epitaxy.

p-p Heterojunction of Nickel Oxide-Decorated Cobalt Oxide Nanorods for Enhanced Sensitivity and Selectivity toward Volatile Organic Compounds.

The utilization of p-p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p-n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (Co3O4) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method. The effective decoration of NiO on the entire surface of Co3O4 NRs enabled the formation of numerous p-p heterojunctions, and they exhibited a 16.78 times higher gas response to 50 ppm of C6H6 at 350 °C compared to that of bare Co3O4 NRs with the calculated detection limit of approximately 13.91 ppb. Apart from the p-p heterojunctions, increased active sites owing to the changes in the orientation of the exposed lattice surface and the catalytic effects of NiO also contributed to the enhanced gas sensing properties. The advantages of p-p heterojunctions for gas sensing applications demonstrated in this work will provide a new perspective of heterostructured metal-oxide nanostructures for sensitive and selective gas sensing.

Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius.

It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH3NH3PbI3/Pt cells, with an endurance of over 103 cycles, a high on/off ratio of 106, and an operation speed of 640 µs and without electroforming. We suggest plausible resistive switching and conduction mechanisms with current-voltage characteristics measured at various temperatures and with different top electrodes and device structures. Beyond the extended endurance, highly flexible resistive switching devices with a minimum bending radius of 5 mm create opportunities for use in flexible and wearable electronic devices.

Polarized Light-Emitting Diodes Based on Patterned MoS2 Nanosheet Hole Transport Layer.

Here, this study successfully fabricates few-layer MoS2 nanosheets from (NH4 )2 MoS4 and applies them as the hole transport layer as well as the template for highly polarized organic light-emitting diodes (OLEDs). The obtained material consists of polycrystalline MoS2 nanosheets with thicknesses of 2 nm. The MoS2 nanosheets are patterned by rubbing/ion-beam treatment. The Raman spectra shows that {poly(9,9-dioctylfluorene-alt-benzothiadiazole), poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)]} (F8BT) on patterned MoS2 exhibits distinctive polarization behavior. It is discovered that patterned MoS2 not only improves the device efficiency but also changes the polarization behavior of the devices owing to the alignment of F8BT. This work demonstrates a highly efficient polarized OLED with a polarization ratio of 62.5:1 in the emission spectrum (166.7:1 at the peak intensity of 540 nm), which meets the manufacturing requirement. In addition, the use of patterned MoS2 nanosheets not only tunes the polarization of the OLEDs but also dramatically improves the device performance as compared with that of devices using untreated MoS2 .