Aharonov-Bohm Interference and Phase-Coherent Surface-State Transport in Topological Insulator Rings.

We present low-temperature magnetotransport measurements on selectively grown Sb2Te3-based topological insulator ring structures. These devices display clear Aharonov-Bohm oscillations in the conductance originating from phase-coherent transport around the ring. The temperature dependence of the oscillation amplitude indicates that the Aharonov-Bohm oscillations originate from ballistic transport along the ring arms. We attribute these oscillations to the topological surface states. Further insight into the phase coherence is gained by comparing with similar Aharonov-Bohm-type oscillations in topological insulator nanoribbons exposed to an axial magnetic field. Here, quasi-ballistic phase-coherent transport is confirmed for closed-loop topological surface states in the transverse direction enclosing the nanoribbon. In contrast, the appearance of universal conductance fluctuations indicates phase-coherent transport in the diffusive regime, which is attributed to bulk carrier transport. Thus, it appears that even in the presence of diffusive p-type charge carriers in Aharonov-Bohm ring structures, phase-coherent quasi-ballistic transport of topological surface states is maintained over long distances.

Supercurrent in Bi4Te3 Topological Material-Based Three-Terminal Junctions.

In this paper, in an in situ prepared three-terminal Josephson junction based on the topological insulator Bi4Te3 and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reveal extended areas of Josephson supercurrent, including coupling effects between adjacent superconducting electrodes. The observed dynamics for the coupling of the junctions is interpreted using a numerical simulation of a similar geometry based on a resistively and capacitively shunted Josephson junction model. The temperature dependency indicates that the device behaves similar to prior experiments with single Josephson junctions comprising topological insulators' weak links. Irradiating radio frequencies to the junction, we find a spectrum of integer Shapiro steps and an additional fractional step, which is interpreted with a skewed current-phase relationship. In a perpendicular magnetic field, we observe Fraunhofer-like interference patterns in the switching currents.

Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices.

Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transport properties is only limited. We report on phase-coherent phenomena in the magnetotransport of GeTe nanowires. From universal conductance fluctuations measured on GeTe nanowires with Au contacts, a phase-coherence length of about 280 nm at 0.5 K is determined. The distinct phase-coherence is confirmed by the observation of Aharonov-Bohm type oscillations for parallel magnetic fields. We interpret the occurrence of these magnetic flux-periodic oscillations by the formation of a tubular hole accumulation layer. For Nb/GeTe-nanowire/Nb Josephson junctions we obtained a critical current of 0.2 µA at 0.4 K. By applying a perpendicular magnetic field the critical current decreases monotonously with increasing field, whereas in a parallel field the critical current oscillates with a period of the magnetic flux quantum confirming the presence of a tubular hole channel.

Phase-coherent loops in selectively-grown topological insulator nanoribbons.

We succeeded in the fabrication of topological insulator (Bi0.57Sb0.43)2Te3 Hall bars as well as nanoribbons by means of selective-area growth using molecular beam epitaxy. By performing magnetotransport measurements at low temperatures information on the phase-coherence of the electrons is gained by analyzing the weak-antilocalization effect. Furthermore, from measurements on nanoribbons at different magnetic field tilt angles an angular dependence of the phase-coherence length is extracted, which is attributed to transport anisotropy and geometrical factors. For the nanoribbon structures universal conductance fluctuations were observed. By performing a Fourier transform of the fluctuation pattern a series of distinct phase-coherent closed-loop trajectories are identified. The corresponding enclosed areas can be explained in terms of nanoribbon dimensions and phase-coherence length. In addition, from measurements at different magnetic field tilt angles we can deduce that the area enclosed by the loops are predominately oriented parallel to the quintuple layers.

Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

Anisotropic phase coherence in GaAs/InAs core/shell nanowires.

Low-temperature transport in nanowires is accompanied by phase-coherent effects, which are observed as modulation of the conductance in an external magnetic field. In the GaAs/InAs core/shell nanowires investigated here, these are h/e flux periodic oscillations in a magnetic field aligned parallel to the nanowire axis and aperiodic universal conductance fluctuations in a field aligned perpendicularly to the nanowire axis. Both electron interference effects are used to analyse the phase coherence of the system. Temperature-dependent measurements are carried out, in order to derive the phase coherence lengths in the cross-sectional plane as well as along the nanowire sidewalls. It is found that these values show a strong anisotropy, which can be explained by the crystal structure of the GaAs/InAs core/shell nanowire. For nanowires with a radius as low as 45 nm, flux periodic oscillations were observed up to a temperature of 55 K.

Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires.

We present low-temperature magnetotransport measurements on GaAs/InAs core/shell nanowires contacted by regular source-drain leads as well as laterally attached Hall contacts, which only touch parts of the nanowire sidewalls. Low-temperature measurements between source and drain contacts show typical phase coherent effects, such as universal conductance fluctuations in a magnetic field aligned perpendicularly to the nanowire axis as well as Aharonov-Bohm-type oscillations in a parallel aligned magnetic field. However, the signal between the Hall contacts shows a Hall voltage buildup, when the magnetic field is turned perpendicular to the nanowire axis while current is driven through the wire using the source-drain contacts. At low temperatures, the phase coherent effects measured between source and drain leads are superimposed on the Hall voltage, which can be explained by nonlocal probing of large segments of the nanowire. In addition, the Aharonov-Bohm-type oscillations are also observed in the magnetoconductance at magnetic fields aligned parallel to the nanowire axis, using the laterally contacted leads. This measurement geometry hereby directly corresponds to classical Aharonov-Bohm experiments using planar quantum rings. In addition, the Hall voltage is used to characterize the nanowires in terms of charge carrier concentration and mobility, using temperature- and gate-dependent measurements as well as measurements in tilted magnetic fields. The GaAs/InAs core/shell nanowire used in combination with laterally attached contacts is therefore the ideal system to three-dimensionally combine quantum ring experiments using the cross-sectional plane and Hall experiments using the axial nanowire plane.

Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires.

We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires.

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires.

We study the impact of the direction of magnetic flux on the electron motion in GaAs/InAs core/shell nanowires. At small tilt angles, when the magnetic field is aligned nearly parallel to the nanowire axis, we observe Aharonov-Bohm type h/e flux periodic magnetoconductance oscillations. These are attributed to transport via angular momentum states, formed by electron waves within the InAs shell. With increasing tilt of the nanowire in the magnetic field, the flux periodic magnetoconductance oscillations disappear. Universal conductance fluctuations are observed for all tilt angles, however with increasing amplitudes for large tilt angles. We record this evolution of the electron propagation from a circling motion around the core to a diffusive transport through scattering loops and give explanations for the observed different transport regimes separated by the magnetic field orientation.

Resolving ambiguities in nanowire field-effect transistor characterization.

We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution and gate action. The effective electrostatic gate width and screening effects are taken into account. A pivotal aspect is that the gate coupling to the nanowire is compromised by the concurrent coupling of the gate electrode to the surface/interface states, which provide the vast majority of carriers for undoped nanowires. In conjunction with field-effect transistor (FET) measurements using two gates with distinctly dissimilar couplings, the study reveals the density of surface states that gives rise to a shallow quantum well at the surface. Both gates yield identical results for the electron concentration and mobility only at the actual surface state density. Our method remedies the flaws of conventional FET analysis and provides a straightforward alternative to intricate Hall effect measurements on nanowires.

Quantum dots in InAs nanowires induced by surface potential fluctuations.

Back-gated InAs nanowire field-effect transistors are studied focusing on the formation of intrinsic quantum dots, i.e. dots not intentionally defined by electrodes. Such dots have been studied before, but the suggested explanations for their origin leave some open questions, which are addressed here. Stability diagrams of samples with different doping levels are recorded at electron temperatures below 200 mK, allowing us to estimate the number and size of the dots as well as the type of connection, i.e. in series or in parallel. We discuss several potential physical origins of the dots and conclude that they are most probably induced by potential fluctuations at the nanowire surface. Additionally, we show that via gate voltage and doping, the samples can be tuned to different regimes of Coulomb blockade.

Flux quantization effects in InN nanowires.

InN nanowires, grown by plasma-enhanced molecular beam epitaxy, were investigated by means of magnetotransport. By performing temperature-dependent transport measurements and current measurements on a large number of nanowires of different dimensions, it is proven that the carrier transport mainly takes place in a tube-like surface electron gas. Measurements on three representative nanowires under an axially oriented magnetic field revealed pronounced magnetoconductance oscillations with a periodicity corresponding to a single magnetic flux quantum. The periodicity is explained by the effect of the magnetic flux penetrating the coherent circular quantum states in the InN nanowires, rather than by Aharonov-Bohm type interferences. The occurrence of the single magnetic flux quantum periodicity is attributed to the magnetic flux dependence of phase-coherent circular states with different angular momentum quantum numbers forming the one-dimensional transport channels. These phase coherent states can exist because of the almost ideal crystalline properties of the InN nanowires prepared by self-assembled growth.

Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

GaN nanowires (NWs) have been grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The nucleation process of GaN-NWs has been investigated in terms of nucleation density and wire evolution with time for a given set of growth parameters. The wire density increases rapidly with time and then saturates. The growth period until the nucleation of new nanowires is terminated can be defined as the nucleation stage. Coalescence of closely spaced nanowires reduces the density for long deposition times. The average size of the well-nucleated NWs shows linear time dependence in the nucleation stage. High-resolution transmission electron microscopy measurements of alternating GaN and AlN layers give valuable information about the length and radial growth rates for GaN and AlN in NWs.

Age- and stage-dependent glyoxalase I expression and its activity in normal and Alzheimer's disease brains.

The reaction of lysine and arginine residues of proteins with 1,2-dicarbonyl compounds result in the formation of advanced glycation end products (AGEs). Accumulation of AGEs is a characteristic feature of the aging brain and contributes to the development of neurodegenerative diseases such as Alzheimer's disease (AD). Therefore, it is of particular interest to study the cellular defense mechanisms against AGE formation and particularly the detoxification of their precursors. AGE precursor compounds such as methylglyoxal and glyoxal were cellulary detoxified by the glyoxalase system, consisting of glyoxalases I and II. Glyoxalase I levels are diminished in old aged brains but elevated in AD brains. However, it is still unknown how glyoxalase I level of AD brains changes in a disease and in an age-dependent manner. Therefore, we investigated the AD stage- and the age-dependent levels of glyoxalase I in the Brodmann area 22 of AD brains (n=25) and healthy controls (n=10). Our results obtained from RT-PCR reveal reducing glyoxalase I RNA levels with advancing stage of AD and with increasing age. Western Blot analysis indicates that in comparison to healthy controls, glyoxalase I protein amounts are 1.5-fold increased in early AD subjects and continuously decrease in middle and late stages of AD. The glyoxalase I protein amounts of AD patients also decrease with age. Results obtained from glyoxalase I activity measurement show 1.05-1.2-fold diminished levels in AD brains compared to healthy controls and no significant decrease neither with the stage of AD nor with age. The immunohistochemical investigations demonstrate an elevated number of glyoxalase I stained neurons in brains of early and middle but not in late AD subjects compared to age-matched healthy controls. In addition, the stage-dependent immunohistochemical investigation demonstrates that with reduced glyoxalase I staining AGE deposits prevail, specifically in late stage of AD. In conclusion, the decrease of glyoxalase I expression with increasing AD stage might be one reason for methylglyoxal-induced neuronal impairment, apoptosis, and AGE formation in plaques and tangles.

Effect of pseudophosphorylation and cross-linking by lipid peroxidation and advanced glycation end product precursors on tau aggregation and filament formation.

Accumulation of hyperphosphorylated Tau protein as paired helical filaments in pyramidal neurons is a major hallmark of Alzheimer disease. Besides hyperphosphorylation, other modifications of the Tau protein, such as cross-linking, are likely to contribute to the characteristic features of paired helical filaments, including their insolubility and resistance against proteolytic degradation. In this study, we have investigated whether the four reactive carbonyl compounds acrolein, malondialdehyde, glyoxal, and methylglyoxal accelerate the formation of Tau oligomers, thioflavin T-positive aggregates, and fibrils using wild-type and seven pseudophosphorylated mutant Tau proteins. Acrolein and methylglyoxal were the most reactive compounds followed by glyoxal and malondialdehyde in terms of formation of Tau dimers and higher molecular weight oligomers. Furthermore, acrolein and methylglyoxal induced the formation of thioflavin T-fluorescent aggregates in a triple pseudophosphorylation-mimicking mutant to a slightly higher degree than wild-type Tau. Analysis of the Tau aggregates by electron microscopy study showed that formation of fibrils using wild-type Tau and several Tau mutants could be observed with acrolein and methylglyoxal but not with glyoxal and malondialdehyde. Our results suggest that reactive carbonyl compounds, particularly methylglyoxal and acrolein, could accelerate tangle formation in vivo and that this process could be slightly accelerated, at least in the case of methylglyoxal and acrolein, by hyperphosphorylation. Interference with the formation or the reaction of these reactive carbonyl compounds could be a promising way of inhibiting tangle formation and neuronal dysfunction in Alzheimer disease and other tauopathies.

Photoluminescence and intrinsic properties of MBE-grown InN nanowires.

The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.

Defect distribution along single GaN nanowhiskers.

In this letter we report on spectral photoconductivity (PC) on different sections of single MBE-grown GaN nanowhiskers of diameters ranging on the order of 100 nm. The photoconductivity spectra show, besides the band-gap related transition, deep-levels corresponding to the yellow, green, and blue bands. A strong spatial localization of specific photocurrent peaks has been observed, indicating that the defects responsible for such transitions are distributed inhomogeneously along the column growth direction.

The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements.

In the present paper, studies on the state of strain in single and ensembles of nanocolumns investigated by photoluminescence spectroscopy will be presented. The GaN nanocolumns were either grown in a bottom-up approach or prepared in a top-down approach by etching compact GaN layers grown on Si(111) and sapphire (0001) substrates. Experimental evidence for strain relaxation of the nanocolumns was found. The difference and development of the strain value for different nanocolumns could be verified by spatially resolved micro-photoluminescence on single nanocolumns separated from their substrate. A common D0X spectral position at 3.473 eV was found for all separated single GaN nanocolumns independent of the substrate or processing technique used, as expected for a relaxed system.

Pathological effects of glyoxalase I inhibition in SH-SY5Y neuroblastoma cells.

In Alzheimer's disease (AD), in aging, and under conditions of oxidative stress, the levels of reactive carbonyl compounds continuously increase. Accumulating carbonyl levels might be caused by an impaired enzymatic detoxification system. The major dicarbonyl detoxifying system is the glyoxalase system, which removes methylglyoxal in order to minimize cellular impairment. Although a reduced activity of glyoxalase I was evident in aging brains, it is not known how raising the intracellular methylglyoxal level influences neuronal function and the phosphorylation pattern of tau protein, which is known to be abnormally hyperphosphorylated in AD. To simulate a reduced glyoxalase I activity, we applied an inhibitor of glyoxalase I, p-bromobenzylglutathione cyclopentyl diester (pBrBzGSCp(2)), to SH-SY5Y neuroblastoma cells to induce chronically elevated methylglyoxal concentrations. We have shown that 10 microM pBrBzGSCp(2) leads to a fourfold elevation of the methylglyoxal level after 24 hr. In addition, glyoxalase I inhibition leads to reduced cell viability, strongly retracted neuritis, increase in [Ca(2+)](i), and activation of caspase-3. However, pBrBzGSCp(2) did not lead to tau "hyper"-phosphorylation despite activation of p38 mitogen-activated protein kinase and c-Jun NH(2)-terminal kinase but rather activated protein phosphatases 2 and induced tau dephosphorylation at the Ser(202)/Thr(205) and Ser(396)/Ser(404) epitopes. Preincubation with the carbonyl scavenger aminoguanidine prevented tau dephosphorylation, indicating the specific effect of methylglyoxal. Also, pretreatment with the inhibitor okadaic acid prevented tau dephosphorylation, indicating that methylglyoxal activates PP-2A. In summary, our data suggest that a reduced glyoxalase I activity mimics some changes associated with neurodegeneration, such as neurite retraction and apoptotic cell death.