Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors.

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 104, a turn-on voltage (V ON) of 1.2 V and a threshold voltage (V T) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer (k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.

Lyotropic 'hairy' TiO2 nanorods.

We report the synthesis of the first stable, solution-processable and photocrosslinkable hybrid organic/inorganic titanium dioxide nanorods as 'hairy rods' coated with phosphonate ligands with photoreactive coumarin groups located in a terminal position. The relationships between the chemical structure of the diethyl-ω-[(7-oxycoumaryl)-n-alkyl]phosphonate ligands on the ligand exchange rate (LER) and the solubility of the resultant ligand-stabilized titanium dioxide nanorods in organic solvents are elucidated. These TiO2 nanorods, with an organic ligand coating, are short enough (aspect ratio = 5-8) to be dissolved in chlorobenzene at high concentrations, but long enough to form lyotropic nematic liquid crystals. These colloidal solutions are used to deposit a thin, uniform layer of hybrid organic/inorganic TiO2 nanorods with their long axes in the plane of a flat, smooth substrate through a self-organization process. Standard photolithographic patterning creates an insoluble dielectric layer of the desired thickness, smoothness and uniformity and with a dielectric constant of sufficient magnitude, k = 8, suitable for the fabrication of multilayer, plastic electronic devices using solution-based fabrication techniques, such as ink-jet printing, used in roll-to-roll manufacturing.

Dual Wavelength (Ultraviolet and Green) Photodetectors Using Solution Processed Zinc Oxide Nanoparticles.

Narrow-band photoconductivity with a spectral width of 0.16 eV is obtained from solution-processed colloidal ZnO nanocrystals beneath the band-edge at 2.25 eV. A new model involving electron transfer from deep defects to discrete shallow donors is introduced to explain the narrow spectrum and the exponential form of the current rise and decay transients. The defects are tentatively assigned to neutral oxygen vacancies. The photocurrent responsivity can be enhanced by storage in air, and this correlates with the formation of carbonate surface species by capture of carbon dioxide during storage. This controllability is exploited to develop a low-cost and scalable photolithographic approach to pixelate photodetectors for applications such as object discrimination, sensing, etc. The spectral response can be spatially patterned so that dual (ultraviolet and green) and single (ultraviolet only) wavelength detecting ZnO pixels can be produced on the same substrate. This presents a new sensor mode with applications in security or full color imaging.

Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories.

Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and transparent electronics applications. However, the dimensional and temporal scalability of GO memories, i.e., how small they can be made and how fast they can be switched, is an area that has received scant attention. Moreover, a plethora of GO resistive switching characteristics and mechanisms has been reported in the literature, sometimes leading to a confusing and conflicting picture. Consequently, the potential for graphene oxide to deliver high-performance memories operating on nanometer length and nanosecond time scales is currently unknown. Here we address such shortcomings, presenting not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrate that our approach provides easily accessible multilevel (4-level, 2-bit per cell) storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates. Via comprehensive experimental characterizations backed-up by detailed atomistic simulations, we also show that the resistive switching mechanism in our Pt/GO/Ti/Pt devices is driven by redox reactions in the interfacial region between the top (Ti) electrode and the GO layer.

Hybrid metal grid-polymer-carbon nanotube electrodes for high luminance organic light emitting diodes.

Organic light emitting diodes (OLEDs) incorporating grid transparent conducting electrodes (TCEs) with wide grid line spacing suffer from an inability to transfer charge carriers across the gaps in the grids to promote light emission in these areas. High luminance OLEDs fabricated using a hybrid TCE composed of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS PH1000) or regioregular poly(3-hexylthiophene)-wrapped semiconducting single-walled carbon nanotubes (rrP3HT-SWCNT) in combination with a nanometre thin gold grid are reported here. OLEDs fabricated using the hybrid gold grid/PH1000 TCE have a luminance of 18 000 cd m(-2) at 9 V; the same as the reference indium tin oxide (ITO) OLED. The gold grid/rrP3HT-SWCNT OLEDs have a lower luminance of 8260 cd m(-2) at 9 V, which is likely due to a rougher rrP3HT-SWCNT surface. These results demonstrate that the hybrid gold grid/PH1000 TCE is a promising replacement for ITO in future plastic electronics applications including OLEDs and organic photovoltaics. For applications where surface roughness is not critical, e.g. electrochromic devices or discharge of static electricity, the gold grid/rrP3HT-SWCNT hybrid TCE can be employed.