ABSTRACT
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid-state electronic devices1-3, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern complementary metal-oxide-semiconductor (CMOS) industry. Equally important, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics such as qubit yield and voltage variation. Spin qubits1,4,5 based on electrons in Si have shown impressive control fidelities6-9 but have historically been challenged by yield and process variation10-12. Here we present a testing process using a cryogenic 300-mm wafer prober13 to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and investigate the transitions of single electrons across full wafers. We analyse the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300-mm scale. Together, these results demonstrate the advances that can be achieved through the application of CMOS-industry techniques to the fabrication and measurement of spin qubit devices.
ABSTRACT
Morphology, dimensions, crystalline structure and compositions of nanomaterials are very critical in determining their unique characteristics. Here we report how the reducing agent concentration affects the surface morphology of copper nanowires and establish the optimized reaction conditions to synthesize high aspect ratio nanowires with a smooth surface. Also, reported is the magnetic field assisted technique to control the orientational and positional ordering of cupronickel nanowires (Cu/Ni NWs) on a large-scale area. A combination of magnetic field, surface derivatization and photolithographic techniques allowed self-assembly of Cu/Ni NWs into channels. The channel resistance as a function of the applied magnetic field during fabrication shows an anomalous decrease owing to the positional end-to-end alignment of NWs. Magnetic field and areal NW density dependence of NW sheet resistance in channels is presented and analyzed using scaling theoretical models.
ABSTRACT
To create an effective well-ordered delivery platform still remains a challenge. Herein we fabricate vertically aligned alumina nanowire arrays via atomic layer deposition templated by carbon nanotubes. Using these arrays, a caspase-3/7 inhibitor was delivered into DC 2.4 cells and blocked apoptosis, as confirmed by fluorescence microscopy.
