ABSTRACT
Surface modification technique of secondary electron emission (SEE) characteristics of materials, which is utilized to suppress or promote the SEE from material surface under electron bombardment, has extensive applications in a variety of fields. Measurement of the secondary electron yield (SEY) and the secondary electron spectrum (SES) before and after surface modification is essential for the evaluation of effectiveness and the investigation of mechanism of material modification. A SEY and SES measurement system is reported in this article. The comparative measurements of the total SEY, the true SEY, the backscattered electron yield, and the SES of nickel and free-standing vertical graphene, which was grown in situ on the surface of nickel substrate by plasma enhanced chemical vapor deposition, were performed using this system. The measurement results demonstrate that this system could facilitate the study of surface modification on the SEE characteristics of conductive materials.
