Large valley splitting induced by spin-orbit coupling effects in monolayer W2NSCl.

Two-dimensional (2D) valley materials are promising materials for writing and storing information. The search for 2D materials with large valley splitting is essential for the development of spintronics and valley electronics. In this study, we theoretically design 2D W2NSCl MXenes with large valley splitting based on first-principle calculations. Due to the strong spin-orbit coupling (SOC) and the broken inversion symmetry, the W2NSCl monolayer exhibits valley splitting values of 491 meV and 83 meV at K/K' of the valence and conduction bands, respectively. The valley splitting of W2NSCl is robust to biaxial strain. Because of the broken mirror symmetry of W2NSCl, there is a Rashba effect at Γ with a Rashba parameter of 1.019 V Å. Based on the maximum localization of the Wannier function, we found the non-zero Berry curvature at K/K'. Furthermore, the non-zero Berry curvature at the K/K' valley increases monotonically with an external strain from -4% to 4%. Our finding shows that W2NSCl is a candidate material for valley electronics and spintronics applications.

Theoretical prediction of valley spin splitting in two-dimensional Janus MSiGeZ4 (M = Cr and W; Z = N, P, and As).

With the exploration of valleytronic materials in MA2Z4 structures, larger valley spin splitting has become a hot topic of research. Based on first-principles calculations, we predicted six valleytronic 2D (two-dimensional) Janus MSiGeZ4 (M = Cr and W; Z = N, P, and As) materials. The valley spin splitting value of WSiGeZ4 (Z = N, P, and As) can reach more than 400 meV, which is favorable for the practical application of valleytronics. Two-dimensional WSiGeZ4 (Z = N, P, and As) materials are dynamically and mechanically stable and have an abundance of electronic properties. The two-dimensional Janus WSiGeZ4 (Z = N, P, and As) structures comprise both direct and indirect bandgap semiconductor materials. Among them, WSiGeN4 is an indirect bandgap semiconductor material with a bandgap of 1.654 eV and WSiGeP4 is a direct bandgap semiconductor material. The valley spin splitting originates from the symmetry breaking of the material structure and the spin-orbit coupling effect of the transition metal, which is manifested as the Berry curvature. In particular, the Berry curvature of 2D Janus WSiGeP4 and WSiGeAs4 is as high as 300 Bohr2, which is quite large. The W atom has more d-orbital electrons than the Cr atom, and the SOC (spin-orbit coupling) effect is stronger; thus, the valley spin splitting value CrSiGeZ4 of WSiGeZ4 is more than 300 meV, which is quite large. In addition, the bandgap and valley spin splitting of WSiGeZ4 (Z = N, P, and As) can be significantly modulated by applying a biaxial strain. Our study shows that WSiGeZ4 (Z = N, P, and As) has great potential for valleytronic applications.

Prediction of a new two-dimensional valleytronic semiconductor MoGe2P4 with large valley spin splitting.

Recently, MoSi2N4 with large valley spin splitting was experimentally synthesized. However, materials with large valley spin splitting are still rare. We predict a new two-dimensional (2D) MoGe2P4 material. It has large valley spin splitting and excellent optical absorption properties. The results show that 2D MoGe2P4 is a direct semiconductor with a bandgap of 887 meV. Its valley spin splitting (ΔV) at the top of the valence band is 153 meV because of the inversion symmetry breaking and spin-orbit coupling (SOC). 2D MoGe2P4 transforms from a semiconductor to a metal under a biaxial strain of 6%. ΔV increases monotonically from 137 meV to 157 meV under biaxial strain. In addition, the lowest exciton state of 2D MoGe2P4 is near 770 nm, and the optical absorption coefficient in the ultraviolet range is higher than that of MoS2. Our results suggest that 2D MoGe2P4 has excellent potential for applications in valley electronics and optoelectronic devices.