1.
Phys Rev Lett
; 86(16): 3586-9, 2001 Apr 16.
Article
in English
| MEDLINE
| ID: mdl-11328029
ABSTRACT
We present the atomic structure of the c(8 x 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 x 2) reconstructions of III-V semiconductors can be described in a unified model.
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Phys Rev B Condens Matter
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Article
in English
| MEDLINE
| ID: mdl-9981325
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Phys Rev B Condens Matter
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Article
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| MEDLINE
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Phys Rev B Condens Matter
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Article
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| MEDLINE
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Phys Rev B Condens Matter
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Article
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Phys Rev B Condens Matter
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Article
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| MEDLINE
| ID: mdl-9999741
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Phys Rev B Condens Matter
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Article
in English
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Phys Rev B Condens Matter
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Article
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Phys Rev B Condens Matter
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Article
in English
| MEDLINE
| ID: mdl-9948261