ABSTRACT
The use of multilayer semiconductor heterojunction structures has shown promise in infrared detector applications. Several heterostructures with innovative compositional and architectural designs have been displayed on emerging infrared technologies. In this review, we aim to illustrate the principles of heterostructure detectors for infrared detection and explore the recent progress on the development of detectors with the split-off band and threshold wavelength extension mechanism. This review article includes an understanding of the compositional and the architectural design of split-off band detectors and to prepare a database of their performances for the wavelength extension mechanism. Preparing a unique database of the compositional or architectural design of structures, their performance, and penetrating the basics of infrared detection mechanisms can lead to significant improvements in the quality of research. The brief outlook of the fundamentals of the infrared detection technique with its appropriateness and limitations for better performance is also provided. The results of the long-term study presented in this review article would be of considerable assistance to those who are focused on the heterostructure infrared detector development.
ABSTRACT
We report a wavelength threshold extension, from the designed value of 3.1 to 8.9 µm, in a p-type heterostructure photodetector. This is associated with the use of a graded barrier and barrier offset, and arises from hole-hole interactions in the detector absorber. Experiments show that using long-pass filters to tune the energies of incident photons gives rise to changes in the intensity of the response. This demonstrates an alternative approach to achieving tuning of the photodetector response without the need to adjust the characteristic energy that is determined by the band structure.
