Field-induced compensation of magnetic exchange as the possible origin of reentrant superconductivity in UTe2.

The potential spin-triplet heavy-fermion superconductor UTe2 exhibits signatures of multiple distinct superconducting phases. For field aligned along the b axis, a metamagnetic transition occurs at µ0Hm ≈ 35 T. It is associated with magnetic fluctuations that may be beneficial for the field-reinforced superconductivity surviving up to Hm. Once the field is tilted away from the b towards the c axis, a reentrant superconducting phase emerges just above Hm. In order to better understand this remarkably field-resistant superconducting phase, we conducted magnetic-torque and magnetotransport measurements in pulsed magnetic fields. We determine the record-breaking upper critical field of µ0Hc2 ≈ 73 T and its evolution with angle. Furthermore, the normal-state Hall effect experiences a drastic suppression indicative of a reduced band polarization above Hm in the angular range around 30° caused by a partial compensation between the applied field and an exchange field. This promotes the Jaccarino-Peter effect as a likely mechanism for the reentrant superconductivity above Hm.

Easy Diameter Tuning of Silicon Nanowires with Low-Cost SnO2-Catalyzed Growth for Lithium-Ion Batteries.

Silicon nanowires are appealing structures to enhance the capacity of anodes in lithium-ion batteries. However, to attain industrial relevance, their synthesis requires a reduced cost. An important part of the cost is devoted to the silicon growth catalyst, usually gold. Here, we replace gold with tin, introduced as low-cost tin oxide nanoparticles, to produce a graphite-silicon nanowire composite as a long-standing anode active material. It is equally important to control the silicon size, as this determines the rate of decay of the anode performance. In this work, we demonstrate how to control the silicon nanowire diameter from 10 to 40 nm by optimizing growth parameters such as the tin loading and the atmosphere in the growth reactor. The best composites, with a rich content of Si close to 30% wt., show a remarkably high initial Coulombic efficiency of 82% for SiNWs 37 nm in diameter.

A Scalable Silicon Nanowires-Grown-On-Graphite Composite for High-Energy Lithium Batteries.

Silicon (Si) is the most promising anode candidate for the next generation of lithium-ion batteries but difficult to cycle due to its poor electronic conductivity and large volume change during cycling. Nanostructured Si-based materials allow high loading and cycling stability but remain a challenge for process and engineering. We prepare a Si nanowires-grown-on-graphite one-pot composite (Gt-SiNW) via a simple and scalable route. The uniform distribution of SiNW and the graphite flakes alignment prevent electrode pulverization and accommodate volume expansion during cycling, resulting in very low electrode swelling. Our designed nanoarchitecture delivers outstanding electrochemical performance with a capacity retention of 87% after 250 cycles at 2C rate with an industrial electrode density of 1.6 g cm-3. Full cells with NMC-622 cathode display a capacity retention of 70% over 300 cycles. This work provides insights into the fruitful engineering of active composites at the nano- and microscales to design efficient Si-rich anodes.

Scalable chemical synthesis of doped silicon nanowires for energy applications.

A versatile, low-cost and easily scalable synthesis method is presented for producing silicon nanowires (SiNWs) as a pure powder. It applies air-stable diphenylsilane as a Si source and gold nanoparticles as a catalyst and takes place in a sealed reactor at 420 °C (pressure <10 bar). Micron-sized NaCl particles, acting as a sacrificial support for the catalyst particles during NW growth, can simply be removed with water during purification. This process gives access to SiNWs of precisely controlled diameters in the range of 10 ± 3 nm with a high production yield per reactor volume (1 mg cm-3). The reaction was scaled up to 500 mg of SiNWs without altering the morphology or diameter. Adding diphenylphosphine results in SiNW n-type doping as confirmed by ESR spectroscopy and EDX analyses. The measured SiNW doping level closely follows the initial dopant concentration. Doping induces both an increase in diameter and a sharp increase of electrical conductivity for P concentrations >0.4%. When used in symmetric supercapacitor devices, 1% P-doped SiNWs exhibit an areal capacity of 0.25 mF cm-2 and retention of 80% of the initial capacitance after one million cycles, demonstrating excellent cycling stability of the SiNW electrodes in the presence of organic electrolytes.

Electronic Spectrum of Twisted Graphene Layers under Heterostrain.

We demonstrate that stacking layered materials allows a strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreover, we demonstrate that heterostrain reconstructs, much more severely, the energy spectrum of TGLs than homostrain for which both layers are strained identically, a result which should apply to virtually all van der Waals structures opening exciting possibilities for straintronics with 2D materials.

Field-induced magnetic instability within a superconducting condensate.

The application of magnetic fields, chemical substitution, or hydrostatic pressure to strongly correlated electron materials can stabilize electronic phases with different organizational principles. We present evidence for a field-induced quantum phase transition, in superconducting Nd0.05Ce0.95CoIn5, that separates two antiferromagnetic phases with identical magnetic symmetry. At zero field, we find a spin-density wave that is suppressed at the critical field µ0H* = 8 T. For H > H*, a spin-density phase emerges and shares many properties with the Q phase in CeCoIn5. These results suggest that the magnetic instability is not magnetically driven, and we propose that it is driven by a modification of superconducting condensate at H*.

Evidence for Charge Transfer at the Interface between Hybrid Phosphomolybdate and Epitaxial Graphene.

The interfacing of polyoxometalates and graphene can be considered to be an innovative way to generate hybrid structures that take advantage of the properties of both components. Polyoxometalates are redox-sensitive and photosensitive compounds with high temperature stability (up to 400 °C for some), showing tunable properties depending on the metal incorporated inside the complex. Graphene has a unique electronic band structure combined with good material properties for electrical and optical applications. The spontaneous, rather than electrochemical, functionalization of epitaxial graphene on SiC with Keggin phosphomolybdate derivative TBA3[PMo11O39{Sn(C6H4)C≡C(C6H4)N2}] (named K(Mo)Sn[N2(+)]) bearing a phenyl diazonium unit is investigated. Graphene decoration is evidenced by means of AFM, Raman, XPS, and cyclic voltammetry, indicating a successful immobilization of the polyoxomolybdate. The covalent bonding of the polyoxometalate to the graphene substrate can be deduced from the appearance of a D band in the Raman spectra and from the loss of mobility in the electrical conduction. High-resolution XPS spectra reveal an electron transfer from the graphene to the Mo complex. The comparison of charge-carrier density measurements before and after grafting supports the p-type doping effect, which is further evidenced by work function UPS measurements.

Evidence for Coexistence of Bulk Superconductivity and Itinerant Antiferromagnetism in the Heavy Fermion System CeCo(In(1-x)Cdx)5.

In the generic phase diagram of heavy fermion systems, tuning an external parameter such as hydrostatic or chemical pressure modifies the superconducting transition temperature. The superconducting phase forms a dome in the temperature-tuning parameter phase diagram, which is associated with a maximum of the superconducting pairing interaction. Proximity to antiferromagnetism suggests a relation between the disappearance of antiferromagnetic order and superconductivity. We combine muon spin rotation, neutron scattering, and x-ray absorption spectroscopy techniques to gain access to the magnetic and electronic structure of CeCo(In(1-x)Cdx)5 at different time scales. Different magnetic structures are obtained that indicate a magnetic order of itinerant character, coexisting with bulk superconductivity. The suppression of the antiferromagnetic order appears to be driven by a modification of the bandwidth/carrier concentration, implying that the electronic structure and consequently the interplay of superconductivity and magnetism is strongly affected by hydrostatic and chemical pressure.

Pressure-induced electronic mixing and enhancement of ferromagnetic ordering in EuX (X=Te, Se, S, O) magnetic semiconductors.

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (Te-->O) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.