Electrical conductivity of a monolayer produced by random sequential adsorption of linear k-mers onto a square lattice.

The electrical conductivity of a monolayer produced by the random sequential adsorption (RSA) of linear k-mers (particles occupying k adjacent adsorption sites) onto a square lattice was studied by means of computer simulation. Overlapping with predeposited k-mers and detachment from the surface were forbidden. The RSA process continued until the saturation jamming limit, p_{j}. The isotropic (equiprobable orientations of k-mers along x and y axes) and anisotropic (all k-mers aligned along the y axis) depositions for two different models-of an insulating substrate and conducting k-mers (C model) and of a conducting substrate and insulating k-mers (I model)-were examined. The Frank-Lobb algorithm was applied to calculate the electrical conductivity in both the x and y directions for different lengths (k=1 - 128) and concentrations (p=0 - p_{j}) of the k-mers. The "intrinsic electrical conductivity" and concentration dependence of the relative electrical conductivity Σ(p) (Σ=σ/σ_{m} for the C model and Σ=σ_{m}/σ for the I model, where σ_{m} is the electrical conductivity of substrate) in different directions were analyzed. At large values of k the Σ(p) curves became very similar and they almost coincided at k=128. Moreover, for both models the greater the length of the k-mers the smoother the functions Σ_{xy}(p),Σ_{x}(p) and Σ_{y}(p). For the more practically important C model, the other interesting findings are (i) for large values of k (k=64,128), the values of Σ_{xy} and Σ_{y} increase rapidly with the initial increase of p from 0 to 0.1; (ii) for k≥16, all the Σ_{xy}(p) and Σ_{x}(p) curves intersect with each other at the same isoconductivity points; (iii) for anisotropic deposition, the percolation concentrations are the same in the x and y directions, whereas, at the percolation point the greater the length of the k-mers the larger the anisotropy of the electrical conductivity, i.e., the ratio σ_{y}/σ_{x} (>1).

Impact of defects on percolation in random sequential adsorption of linear k-mers on square lattices.

The effect of defects on the percolation of linear k-mers (particles occupying k adjacent sites) on a square lattice is studied by means of Monte Carlo simulation. The k-mers are deposited using a random sequential adsorption mechanism. Two models L(d) and K(d) are analyzed. In the L(d) model it is assumed that the initial square lattice is nonideal and some fraction of sites d is occupied by nonconducting point defects (impurities). In the K(d) model the initial square lattice is perfect. However, it is assumed that some fraction of the sites in the k-mers d consists of defects, i.e., is nonconducting. The length of the k-mers k varies from 2 to 256. Periodic boundary conditions are applied to the square lattice. The dependences of the percolation threshold concentration of the conducting sites p(c) vs the concentration of defects d are analyzed for different values of k. Above some critical concentration of defects d(m), percolation is blocked in both models, even at the jamming concentration of k-mers. For long k-mers, the values of d(m) are well fitted by the functions d(m)∝k(m)(-α)-k(-α) (α=1.28±0.01 and k(m)=5900±500) and d(m)∝log(10)(k(m)/k) (k(m)=4700±1000) for the L(d) and K(d) models, respectively. Thus, our estimation indicates that the percolation of k-mers on a square lattice is impossible even for a lattice without any defects if k⪆6×10(3).

Jamming and percolation in generalized models of random sequential adsorption of linear k-mers on a square lattice.

The jamming and percolation for two generalized models of random sequential adsorption (RSA) of linear k-mers (particles occupying k adjacent sites) on a square lattice are studied by means of Monte Carlo simulation. The classical RSA model assumes the absence of overlapping of the new incoming particle with the previously deposited ones. The first model is a generalized variant of the RSA model for both k-mers and a lattice with defects. Some of the occupying k adjacent sites are considered as insulating and some of the lattice sites are occupied by defects (impurities). For this model even a small concentration of defects can inhibit percolation for relatively long k-mers. The second model is the cooperative sequential adsorption one where, for each new k-mer, only a restricted number of lateral contacts z with previously deposited k-mers is allowed. Deposition occurs in the case when z≤(1-d)z(m) where z(m)=2(k+1) is the maximum numbers of the contacts of k-mer, and d is the fraction of forbidden contacts. Percolation is observed only at some interval k(min)≤k≤k(max) where the values k(min) and k(max) depend upon the fraction of forbidden contacts d. The value k(max) decreases as d increases. A logarithmic dependence of the type log(10)(k(max))=a+bd, where a=4.04±0.22,b=-4.93±0.57, is obtained.

Percolation and jamming of linear k-mers on a square lattice with defects: Effect of anisotropy.

Using the Monte Carlo simulation, we study the percolation and jamming of oriented linear k-mers on a square lattice that contains defects. The point defects with a concentration d are placed randomly and uniformly on the substrate before deposition of the k-mers. The general case of unequal probabilities for orientation of depositing of k-mers along different directions of the lattice is analyzed. Two different relaxation models of deposition that preserve the predetermined order parameter s are used. In the relaxation random sequential adsorption (RRSA) model, the deposition of k-mers is distributed over different sites on the substrate. In the single-cluster relaxation (RSC) model, the single cluster grows by the random accumulation of k-mers on the boundary of the cluster (Eden-like model). For both models, a suppression of growth of the infinite (percolation) cluster at some critical concentration of defects d(c) is observed. In the zero-defect lattices, the jamming concentration p(j) (RRSA model) and the density of single clusters p(s) (RSC model) decrease with increasing length k-mers and with a decrease in the order parameter. For the RRSA model, the value of d(c) decreases for short k-mers (k<16) as the value of s increases. For k=16 and 32, the value of d(c) is almost independent of s. Moreover, for short k-mers, the percolation threshold is almost insensitive to the defect concentration for all values of s. For the RSC model, the growth of clusters with ellipselike shapes is observed for nonzero values of s. The density of the clusters p(s) at the critical concentration of defects d(c) depends in a complex manner on the values of s and k. An interesting finding for disordered systems (s=0) is that the value of p(s) tends towards zero in the limits of the very long k-mers, k→∞, and very small critical concentrations d(c)→0. In this case, the introduction of defects results in a suppression of k-mer stacking and in the formation of empty or loose clusters with very low density. On the other hand, denser clusters are formed for ordered systems with p(s)≈0.065 at s=0.5 and p(s)≈0.38 at s=1.0.

Percolation of linear k-mers on a square lattice: from isotropic through partially ordered to completely aligned states.

Numerical simulations by means of Monte Carlo method and finite-size scaling analysis have been performed to study the percolation behavior of linear k-mers (also denoted in publications as rigid rods, needles, sticks) on two-dimensional square lattices L × L with periodic boundary conditions. Percolation phenomena are investigated for anisotropic relaxation random sequential adsorption of linear k-mers. Especially, effect of anisotropic placement of the objects on the percolation threshold has been investigated. A detailed study of the behavior of percolation probability R(L)(p) that a lattice of size L percolates at concentration p in dependence on k, anisotropy, and lattice size L has been performed. A nonmonotonic size dependence for the percolation threshold has been confirmed in the isotropic case. We propose a fitting formula for percolation threshold, p(c) = a/k(α)+blog(10)k+c, where a, b, c, and α are the fitting parameters depending on anisotropy. We predict that for large k-mers (k >/≈ 1.2 × 10(4)) isotropically placed at the lattice, percolation cannot occur, even at jamming concentration.

Random sequential adsorption of partially oriented linear k-mers on a square lattice.

Jamming phenomena on a square lattice are investigated for two different models of anisotropic random sequential adsorption (RSA) of linear k-mers (particles occupying k adjacent adsorption sites along a line). The length of a k-mer varies from 2 to 256. The effect of k-mer alignment on the jamming threshold is examined. For completely ordered systems where all the k-mers are aligned along one direction (e.g., vertical), the obtained simulation data are very close to the known analytical results for one-dimensional systems. In particular, the jamming threshold tends to the Rényi's parking constant for large k. In the other extreme case, when k-mers are fully disordered, our results correspond to the published results for short k-mers. It was observed that for partially oriented systems the jamming configurations consist of the blocks of vertically and horizontally oriented k-mers (v and h blocks, respectively) and large voids between them. The relative areas of different blocks and voids depend on the order parameter s, k-mer length, and type of the model. For small k-mers (k⩽4), denser configurations are observed in disordered systems as compared to those of completely ordered systems. However, longer k-mers exhibit the opposite behavior.