ABSTRACT
Current rectification property of as-grown single-walled carbon nanotubes (SWNTs) is investigated. The SWNTs are grown by chemical vapor deposition (CVD) process. The process allowed to grow long strands of SWNT bundles, which are then used to fabricate multiple arrays of switching devices with the channel length of 3, 5, 7 and 10 microm on a 15 mm x 15 mm SiO2 on Si substrate. Regardless of the channel length, a majority of the fabricated devices show current rectification characteristics, with high throughput of current (I) in the forward bias (V) giving the forward and reverse current ratio (Ifor/Irev) of approximately 10(6). Atomic force microscopic (AFM) analysis of the device structure and surface topology of SWNT suggest the observed rectification of current to possibly result from (a) cross-tube junctions, (b) a mixture of metallic and semiconducting tubes in the SWNT bundles, and/or (c) chirality change along a single tube. The exact mechanism underlying the observed rectification could not be conclusively established. However, the analyses of the experimental results strongly suggest the observed rectification to result from Schottky-type diode properties of SWNTs with mixed chirality along the tube.
ABSTRACT
The length-fractionation of shortened (250 to 25 nm), zwitterion-functionalized, single wall carbon nanotubes (SWNTs) has been demonstrated via gel permeation chromatography (GPC). The UV-Vis spectrum of each fraction indicates an apparent "solubilization", as evident by the direct observation of all predicted optically allowed interband transitions between the mirror image spikes in the density of states of both metallic and semiconducting SWNTs with various tube diameters. As evident by the presence or absence of the 270 nm, pi-plasmon absorption, this "solubilization" is a dynamic process and leads to re-aggregation if left undisturbed for a couple of weeks or upon dissociation of the pendant octadecylamine groups. This non-destructive and highly versatile separation methodology opens up an array of possible applications for shortened SWNTs in nanostructured devices.
