ABSTRACT
We present a theoretical calculation and experimental results for a waveguiding layer acoustic wave (WLAW). The experimental device is modeled by the finite element method (FEM) for the AlN/ZnO/diamond structure. It was found that the AlN thickness must be at least larger than 3lambda/2 to obtain negligible surface displacement. In the same way, the ZnO thickness for a fixed value of AlN thickness at 2lambda must be larger than lambda/4 to confine the acoustic wave. The electromechanical coupling of the wave presents an optimum around lambda/2 for the ZnO layer thickness. A first experimental AlN/ZnO/diamond device has been developed and shows the WLAW at 412 MHz.
ABSTRACT
Surface acoustic wave (SAW) devices have been shown to be suitable for many sensor applications. One of these applications is pressure sensor. In this study we investigate the performance of SAW pressure sensors formed with ZnO/Si(001) structure. The pressure sensitivities of Rayleigh mode as well as the Sezawa mode are studied as a function of normalized thickness (kh = 2pihZnO/lambda). The experimental results show an opposite strain effect in the ZnO layer and Si substrate. A theoretical approach based on the perturbation method has been developed for the evaluation of pressure sensitivity in the Sezawa mode. Experimental and theoretical results obtained for the ZnO/Si SAW sensor prepared with kh = 1.18 are in good agreement. For kh < or = 1.2, the ZnO contribution to the sensor sensitivity can be neglected in the Sezawa mode in which ZnO acts mainly as an electromechanical conversion layer.
