Visualizing anisotropy in the surface oxidation of germanium by wet etching of patterned nanowedges: proof of concept.

We study the anisotropy in surface oxidation for Ge(100) and (110) in HCl/H2O2 solution complemented by synchrotron X-ray photoemission spectroscopy (SXPS) measurements integrated with an in situ etching chamber. Visual anisotropic demonstration is confirmed by lithographic Ge nanowedges.

Interaction of liquid water with the p-GaInP2(100) surface covered with submonolayer oxide.

High-resolution surface-sensitive synchrotron radiation photoelectron spectroscopy was used to study the interaction of water with the p-GaInP2(100) surface covered with submonolayer residual native oxide in order to get insight into water dissociation at the solar water-splitting photocathodes in real liquid environment. In the surface-sensitive valence band spectra features related to Ga-OH, In-OH, and H-In-OH bonds appear after emersion of the p-GaInP2(100) surface from liquid water at room temperature. Indium core levels remain intact after emersion, while the gallium core levels indicate transformation of gallium oxides to hydroxides, as well as the accumulation of metallic gallium. Surface sensitive P 2p core level spectra indicate formation of P-H bonds after emersion. These changes of the surface chemical bonds can be attributed to the dissociation of the water molecules on the p-GaInP2(100) surface, leading to the subsequent transformation of surface oxides to hydroxides. Interaction of water with the p-GaInP2(100) surface covered with submonolayer residual native oxide causes an increase in the work function by 80 meV and a modification of the valence band edge spectrum, which is evidence of a change of the surface dipole due to the charge redistribution induced by the transformation of the surface oxides to hydroxides.

Synchrotron photoemission analysis of semiconductor/electrolyte interfaces by the frozen-electrolyte approach: interaction of HCl in 2-propanol with GaAs(100).

Perspectives of a new approach for the synchrotron photoemission spectroscopic analysis of chemical processes at solid/liquid interfaces under UHV conditions have been explored. A thin layer of HCl-2-propanol solution was frozen-in on the semiconductor GaAs(100) wafer surface by cooling the substrate to liquid nitrogen temperature after etching off the native oxide layer under N2 atmosphere. Chemical reactions induced in situ by exposure to synchrotron radiation (SR) and by stepwise heating have been monitored. Right after etching and freezing, the surface is covered by gallium chlorides with 1, 2, 3, and 4 Cl ions attached and lattice back-bonded to As atoms, as well as by elemental arsenic As0 and 2-propanol. Exposure to SR at low temperature produces surface As chlorides at the expense of As0. The GaCl3 and GaCl2 emissions diminish while GaCl is enhanced. On the other hand, heating the sample to approximately 130 K just above H2O desorption causes the thermodynamically expected reaction of AsCl3 with the substrate GaAs to form Ga chloride species and As0. Heating the sample to room temperature leaves only As0 on the surface and for gallium the content of all surface chlorides is drastically reduced. By further heating to 400 K elemental arsenic starts to desorb and the Ga chloride surface content is reduced. Using different excitation energies the depth composition of the reaction products has been monitored indicating a tendency of decreasing chlorination numbers and increasing Ga vs As chloride content toward the pristine substrate at each stage of the reaction.