Changes in Types of Drinking Behavior in Korean Adults: Differences in Demographics, Depression, and Suicidal Thoughts.

Background: Longitudinal studies of drinking behavior have reported inconsistent changes in drinking behavior as people age. Thus, this study aims to characterize the changes in drinking behavior among Korean adults and to reveal differences in their demographics, depression, and suicidal thoughts. Methods: This study used the Korea Welfare Panel Study data over nine years (2009 to 2017), analyzing a total of 7506 participants. Growth mixture modeling was applied to classify patterns of change in drinking in these participants. The χ2 test and analysis of variance were used to analyze the differences in demographics, depression, and suicidal thoughts according to patterns of change in drinking. Results: Changes in drinking among Korean adults were categorized into four types: "high-risk retention", "medium-risk to high-risk", "high-risk to low-risk", and "low-risk retention". Gender, age, education, marital status, living arrangement, living area, and depression differed among these groups. Conclusion: We identified four types of changes in adult drinking behavior in South Korea, which varied in their demographics and depression levels. These results suggest that tailoring interventions to the type of behavioral changes might be more useful than batch interventions.

Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation.

A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm2 V-1 s-1 with an on/off current ratio of >108 and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.