ABSTRACT
Aims: To determine the effects of group-task-oriented training (group-TOT) on gross and fine motor function, activities of daily living (ADL) and social function of children with spastic cerebral palsy (CP).Methods: Eighteen children with spastic CP (4-7.5 years, gross motor function classification system level I-III) were randomly assigned to the Group-TOT (9 children received group-TOT for 1 hour, twice a week for 8 weeks) or the comparison group (9 children received individualized traditional physical and occupational therapy). The Gross Motor Function Measure (GMFM)-88, the Bruininks-Oseretsky Test of Motor Proficiency 2nd edition (BOT-2), and the Pediatric Evaluation of Disability Inventory (PEDI) were administered before and after the intervention, and in the Group-TOT, 16 weeks after the intervention.Results: Children in the Group-TOT showed significant improvements in the GMFM-88 standing and walking/running/jumping subscales, the BOT-2 manual dexterity subscale, and the PEDI social function subscale (p < 0.05); changes were maintained 16 weeks after the intervention ended. In contrast, the comparison group improved in only the BOT-2 fine motor integration subscale (p < 0.05).Conclusions: The findings provide evidence of effectiveness of group-TOT in improving gross and fine motor function, and social function in children with CP.
Subject(s)
Activities of Daily Living , Cerebral Palsy/rehabilitation , Group Processes , Motor Skills , Physical Therapy Modalities , Child , Child, Preschool , Disability Evaluation , Female , Humans , MaleABSTRACT
X-ray photoelectron spectroscopy spectra showed that the synthesized elements of the CdSe/CdS/ ZnS QDs were Cd, Se, Zn, and S. Organic bistable devices (OBDs) containing CdSe/CdS/ZnS quantum dots (QDs) and a poly(methylmethacrylate) (PMMA) layer were fabricated on indium-tin-oxide (ITO)-deposited glass substrates. Current-voltage (I-V) curves showed that the memory margin of the Al/(CdSe/CdS/ZnS QDs) embedded in PMMA layer/ITO device at 300 K was larger than that of the device without a ZnS shell layer. The retention time of the OBDs was above 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms were described by using charge trapping and tunneling processes on the basis of the energy diagram and the I-V curves.
ABSTRACT
The effect of nanoscale Ag film thickness on the electrical and optical properties in transparent conducting oxide films consisting of an IZTO/Ag/IZTO multilayer were investigated. The homoge- neous morphologies of the Ag films sandwiched between the IZTO films affected the optical and electrical properties of the IZTO/Ag/IZTO multilayer films. The transmittance and resistivity of the IZTO/Ag/IZTO multilayer films decreased with increasing Ag film thickness. The resistivities of the IZTO/Ag/IZTO multilayer films grown on glass substrates were decreased by using an Ag thin inter- layer in comparison with that of the IZTO single layer.
