Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range.

The floating-base germanium-tin (Ge1-xSnx) heterojunction phototransistor (HPT) is designed and investigated as an efficient optical receiver in the short-wave infrared range. Simulations indicate that as the Sn content increases, the responsivity significantly increases due to a higher absorption coefficient and a larger valence band offset between Ge and Ge1-xSnx. Ge0.935Sn0.065 HPTs that incorporated high-quality Ge0.935Sn0.065 film grown by molecular beam epitaxy were fabricated, demonstrating optical response beyond wavelength of 2003 nm. At a low bias voltage of 1.0 V, optical response enhancement of ~10 times was achieved over the conventional Ge0.935Sn0.065 p-i-n photodiode. High responsivities of ~1.8 A/W at 1550 nm and ~0.043 A/W at 2003 nm were demonstrated with low dark current density of 0.147 A/cm2.

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

We report the demonstration of a germanium-tin (Ge0.9Sn0.1) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 µm-wavelength light detection. Characterization of the photodetector in both direct current (DC) and radio frequency (RF) regimes was performed. At the bias voltage of -1 V, a dark current density of 0.031 A/cm2 is realized at room-temperature, which is among the lowest reported values for Ge1-xSnx-on-Si p-i-n photodiodes. In addition, for the first time, a 3 dB bandwidth (f3dB) of around 1.2 GHz is achieved in Ge1-xSnx photodetectors operating at 2 µm. It is anticipated that further device optimization would extend the f3dB to above 10 GHz.

Monolithic integration of InGaAs n-FETs and lasers on Ge substrate.

We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers used for realizing transistors and lasers were grown epitaxially on the Ge substrate using molecular beam epitaxy (MBE). A Si-CMOS compatible process was developed to realize InGaAs n-FETs with subthreshold swing SS of 93 mV/decade, ION/IOFF ratio of more than 4 orders of magnitude with very low off-state leakage current, and a peak effective mobility of more than 2000 cm2/V·s. In addition, fabrication process uses a low overall processing temperature (≤ 400 °C) to maintain the high quality of the InGaAs/GaAs MQWs for the laser. Room temperature electrically-pumped lasers with a lasing wavelength of 1.03 µm and a linewidth of less than 1.7 nm were realized.

Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique.

We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si) surface passivation technique effectively suppress the dark current originating from the mesa sidewall of the Ge(0.95)Sn(0.05) on Si (Ge(0.95)Sn(0.05)/Si) p-i-n photodiode. Current-voltage (I-V) characteristics show that the sidewall surface passivation technique could reduce the surface leakage current density (Jsurf) of the photodiode by ~100 times. A low dark current density (Jdark) of 0.073 A/cm(2) at a bias voltage of -1 V is achieved, which is among the lowest reported values for Ge(1-x)Sn(x)/Si p-i-n photodiodes. Temperature-dependent I-V measurement is performed for the Si-passivated and non-passivated photodiodes, from which the activation energies of dark current are extracted to be 0.304 eV and 0.142 eV, respectively. In addition, the optical responsivity of the Ge(0.95)Sn(0.05)/Si p-i-n photodiodes to light signals with wavelengths ranging from 1510 nm to 1877 nm is reported.

Effects of annealing on performances of 1.3-µm InAs-InGaAs-GaAs quantum dot electroabsorption modulators.

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-µm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration.

Gain-assisted propagation of surface plasmon polaritons via electrically pumped quantum wells.

We studied the loss compensation of surface plasmon polaritons (SPPs) with InGaAsP quantum wells at telecom wavelength. The quantum wells are buried in the vicinity of a thin Au film. The propagation length of short-range SPPs increases drastically with the gain coefficient of quantum wells, generated by a forward bias. The elongation of SPP propagation is experimentally observed via long-range SPPs, which strongly couple with the short-range SPPs. This study paves a way for electrically manipulated amplification of SPPs in plasmonic circuits.

How small can a microring resonator be and yet be polarization independent?

There has been a recent trend to reduce the size of photonic waveguide devices to enable high-density integration in silicon photonic integrated circuits. However, this miniaturization tends to result in increased polarization dependency. Particularly challenging is designing devices based on ring waveguides with small radii, which exacerbates the polarization sensitivity. For these microring resonators, a legitimate question is then: Is it possible to simultaneously maintain the conditions of single-mode and structural polarization independence while shrinking the size of both the bend radius and the waveguide cross section, and, if so, how small can the ring resonator be? We demonstrate theoretically the feasibility of achieving this via deeply etched submicrometer silicon-on-insulator rib waveguides, and we show that, for a given cladding and core thickness, the radius of a polarization independent microring resonator can be as small as 3 microm, being limited chiefly by the residual birefringence of the resonator cavity and the bend losses.

High-index-contrast waveguides and devices.

We present a theoretical and experimental study of high-index-contrast waveguides and basic (passive) devices built from them. Several new results are reported, but to be more comprehensive we also review some of our previous results. We focus on a ridge waveguide, whose strong lateral confinement gives it unique properties fundamentally different from the conventional weakly guiding rib waveguides. The ridge waveguides have distinct characteristics in the single-mode and the multimode regimes. The salient features of the single-mode waveguides are their subwavelength width, strong birefringence, relatively high propagation loss, and high sensitivity to wavelength as well as waveguide width, all of which may limit device performance yet provide new opportunities for novel device applications. On the other hand, wider multimode waveguides are low loss and robust. In addition, they have a critical width where the birefringence is minimal or zero, giving rise to the possibility of realizing intrinsically polarization-independent devices. They can be made effectively single mode by employing differential leakage loss (with an appropriate etch depth) or lateral mode filtering (with a taper waveguide). Together these waveguides provide the photonic wire for interconnections and the backbone to build a broad range of compact devices. We discuss basic single-mode devices (based on directional couplers) and multimode devices (multimode interferometers) and indicate their underlying relationship.

Transformation between directional couplers and multi-mode interferometers based on ridge waveguides.

We present a unique comparison of ridge-type directional couplers (DC) and multi-mode interferometers (MMI) in terms of their transformational relationship. The two devices are intimately related as the MMI is derived from the DC. We show for the first time the continuous evolution from the two-mode coupling characteristic of DC to the multimode mixing and interference characteristic of MMI, as the DC is structurally transformed into the MMI. We also show that DC can be designed to have the MMI features of compactness and polarization-insensitivity, two traits that reflect their shared lineage. However, the design of DC requires careful control of a large set of design parameters, while the MMI design is more robust and involves fewer design variables.