ABSTRACT
Area-selective copper deposition on screen printed Ag pattern/anodized Al/Al substrate was attempted using a neutral electroless plating processes for printed circuit boards (PCBs), according to a range of variation of pH 6.5-pH 8 at 70 °C. The utilized basic electroless solution consisted of copper(II) sulfate pentahydrate, sodium phosphinate monohydrate, sodium citrate tribasic dihydrate, ammonium chloride, and nickel(II) sulfate hexahydrate. The pH of the copper plating solutions was adjusted from pH 6.5 to pH 8 using NH4OH. Using electroless plating in pH 6.5 and pH 7 baths, surface damage to the anodized Al layer hardly occurred; the structure of the plated Cu-rich films was a typical fcc-Cu, but a small Ni component was co-deposited. In electroless plating at pH 8, the surface of the anodized Al layer was damaged and the Cu film was composed of a lot of Ni and P which were co-deposited with Cu. Finally, in a pH 7 bath, we can make a selectively electroless plated Cu film on a PCB without any lithography and without surface damage to the anodized Al layer.
ABSTRACT
By electroless plating in a pH 7 bath at 50 °C, Ni-B alloy films with nano-crystallite size (3-6 nm) were formed on screen printed Ag paste. According to the addition of DMAB (dimethylamine borane), the boron concentration in the Ni-B alloy films increased systematically from <1 at.% to ~10 at.%, and the crystallite size of the Ni-B alloy films decreased gradually. The crystal/electronic structures of the Ni-B alloys were studied using XAS (X-ray absorption spectroscopy), XRD, etc., with changes of boron contents. In the crystalline structure, the ordering of fcc type was broken upon alloying and then the samples with additions of 0.5 M and 1 M DMAB had amorphous-like structures with decreases of crystallite size. In the electronic structure, the unoccupied d states of the Ni sites were filled as the B concentration increased upon alloying. From the electronegativity rule and the broken orderging upon alloying, we can suggest that an overall charge transfer occurs from the Ni sites toward the alloying B sites with intra-atomic charge redistribution, leading to an increased occupancy of the Ni 3d states in the alloys.
ABSTRACT
In this study, we investigated the characteristics of a nearly neutral Ni source solution including dimethylamine borane (DMAB) used to develop the metal PCB (printed circuit board) of high power LED (light-emitting diode) package. In accordance with the bath temperature ranging from 50 degrees C to 75 degrees C, an electroless Ni-B plating on a screen-printed Ag pattern with an anodized Al substrate was carried out. The depositon rate of the electroless plated Ni-B film at bath temperature ranging from 50 degrees C to 75 degrees C was estimated by measurements of the thickness and the mass. The deposition rates by change of thickness and mass of the electroless plated Ni-B film at 50 degrees C were - 58 nm/min and 0.113 mg/min respectively. The activation energy obtained from slope of Arrhenius plot using these deposition rates was - 59 kJ/mol. Finally, selectively the film growth was achieved at all plating temperatures, without a damage of anodized Al substrate.
ABSTRACT
To develop metal printed circuit boards for a high-power light-emitting diode package using electroless plated Ni-B films on an all-in-one Al2O3-Al substrate with a 10 nm pore size, the growth mode of an electroless Ni-B film on a screen-printed Ag pattern/Al2O3-Al substrate was studied. So as not to damage the Al2O3-AI substrate, a nearly neutral Ni plating solution bath (pH 6.5) included dimethylamine borane was used. It was confirmed that the Ni-B film was selectively grown on the printed Ag paste layer, without growth on the Al2O3. The structure of the electroless plated Ni-B film was amorphous, and the deposition rate of the film was 1.64 +/- 0.078 nm/sec. According to the increase in plating time, the grain sizes of the electroless plated Ni-B film became bigger, and the surface morphology gradually became flatter. In addition, both the mass difference and the film thickness were changed linearly. From these results, it can be concluded that the electroless Ni-B film on printed Ag paste grows immediately from the beginning, and then grows linearly with increasing plating time.
ABSTRACT
We synthesized nano-sized (Pb, La)TiO3 powder using a high energy mechano-chemical technique at room temperature. By the results, nano-sized (Pb, La)TiO3 powder with perovskite structure was successfully synthesized from an oxide mixture using a high energy mechano-chemical technique without any post-annealing. The mechanically-synthesized (Pb, La)TiO3 powder consisted of nanometer sized particles and had very high homogeneity. According to increase of milling time, source phases such as Pb oxides and TiO2 disappeared and the perovskite PLT phase was formed by chemical reaction and the release of OH group.
ABSTRACT
An interpoly-stacked dielectric film with a SiO2/Si3N4/SiO2/Si (ONO) structure was prepared via the atomic-layer deposition method. The multilayer structure of the ONO film with triple interfaces was investigated via medium-energy ion scattering (MEIS). A few defects in the interface layer of the ONO structure were detected. From the X-ray photoelectron spectroscopy (XPS) results, it was presumed that the interface layer with defects in the MEIS result is due to the formation of an oxynitride layer on the unstable and rougher Si3N4 layer via. By measuring the I-V characteristics, the leakage current density and breakdown field of the ONO film were determined to be 3.4 x 10(-9) A/cm2 and 10.86 MV/cm, respectively. By estimation the C-V curve, the flat band (V(FB)) of the ONO film shifted to a negative voltage (-1.14 V), the dielectric constant (K(ONO)) of the ONO film was 5.79, and the effective interface-trapped charge density of the ONO film was about 4.96 x 10(11)/cm2.
