ABSTRACT
The fabrication of large-area vertical junctions with a molecular spin-crossover complex displaying concerted changes of spin degrees of freedom and charge-transport properties is reported. Fabricated devices allow spin-state switching in the spin-crossover layer to be triggered and probed by optical means, while detecting associated changes in electrical resistance in the junctions.
ABSTRACT
We studied the effect of light irradiation on the electrical conductance of micro-rods of the spin crossover [Fe(Htrz)2(trz)](BF4) network, organized between interdigitated gold electrodes. By irradiating the sample with different wavelengths (between 295 and 655 nm) either in air or under a nitrogen atmosphere we observed both a reversible and an irreversible change of the current flowing in the device. The reversible process consists of an abrupt decrease of the current intensity (ca. 10-50%) upon light irradiation, while the irreversible process is characterized by a slow, but continuous increase in time of the current, which persists also in the dark. These photo-induced processes were only detected in the high conductance low-spin (LS) state of the complex. On switching the rods to the high spin (HS) state the conductance decreases two orders of magnitude (at the same temperature) and - as a consequence - the photo-effect vanishes.
