ABSTRACT
Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.
ABSTRACT
Integrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory. It is also experimentally presented by integrating non-volatile phase change material (PCM) Sb2Se3 on silicon to realize compact, low-loss, and broadband engineering operations. The fabricated filter holds a compact footprint of 0.5 µm × 43.5 µm and maintains a low insertion loss of < 0.5â dB after multiple levels of engineering to achieve crystallization. The filter is able to switch from a low-loss transmission state to the Bragg reflection state, making it a favorable solution for large-scale reconfigurable photonic circuits. With a switching extinction ratio over 30â dB at 1504.85â nm, this hybrid filter breaks the tradeoff between insertion loss and tuning range. These results reveal its potential as a new candidate for a basic element in large-scale non-volatile reconfigurable systems.