ABSTRACT
We describe a 6 × 6 array of electrically addressed field-effect-transistor self-electro-optic-effect-device differential modulators in which each element has a single-stage amplifier to permit an input voltage of less than 1 V to control the output modulators, which can operate at as high as 10 V. The variations in the switching voltages across the array are less than ±70 mV, and the individual array elements are operated at as high as 2 Gbits/s. We also measure cross talk between adjacent elements within the array, measure the dependence of the switching time on the input voltage swing, and calculate the dependence of the switching time that is due to the photocurrent of the modulators.
ABSTRACT
Optically bistable symmetric self-electro-optic-effect devices that use an asymmetric Fabry-Perot resonator are demonstrated and assessed. Contrast ratios exceeding 30 for low bias levels (under 6 V) are measured for low intensities. The Fabry-Perot self-electro-optic-effect device is also shown to saturate readily with intensity, with the contrast ratio decreasing by a factor of 3 for an irradiance of 10 microW/microm(2). Wavelength sensitivity measurements and calculations are also presented.
