Charged particle single nanometre manufacturing.

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled "Single Nanometre Manufacturing: Beyond CMOS". Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

Multivalence-band calculation of the excitonic dielectric function for hexagonal GaN.

The complex dielectric function of hexagonal gallium nitride (α-GaN) is obtained from a numerical solution of the excitonic Schrödinger equation taking into account the full 6 × 6 valence-band structure. The valence-band parametrization includes anisotropy, nonparabolicity, and the coupling of angular-momentum eigenstates. Spectra of excitonic eigenfunctions are obtained from a time-dependent initial-value problem, which is solved via an exponential split-operator method. In particular, we calculate the dielectric function and the reflectivity of a-plane GaN with polarization vectors parallel and perpendicular to the c-axis of the crystal. The simulated reflection spectra are in excellent agreement with recent experimental data and allow the unambiguous identification of the experimentally observed excitonic resonances. The binding energies of the FXA, FXB, and FXC excitons found in our calculation differ by up to 27%, depending on the chosen parameter set. An important consequence of this observation is that the experimentally observed splittings of the excitons cannot be used for the parametrization of the valence band near the Γ-point, but need to be corrected by the differences of the binding energies. This is of general relevance for all spectroscopic measurements in semiconductors with a wide bandgap.

Genes associated with prostate cancer are differentially expressed in African American and European American men.

BACKGROUND: Despite more aggressive screening across all demographics and gradual declines in mortality related to prostate cancer (PCa) in the United States, disparities among populations persist. A substantial proportion of African American men (AAM) have a higher overall incidence, earlier age of onset, increased proportion of clinically advanced disease, and increased bone metastases and mortality from PCa compared to European American men (EAM). Limited early evidence indicates that underlying causes for disparities may be observed in tumor-specific gene expression programs. METHODS: This study used microarray-based methods to measure expression levels for 517 genes that were previously associated with PCa in archived formalin-fixed paraffin embedded (FFPE) specimens; testing the hypothesis that gene expression features of functional consequence to cancer distinguish PCa from AAM and EAM. A t test was conducted comparing AAM to EAM expression levels for each probe on the array. RESULTS: Analysis of 639 tumor samples (270 AAM, 369 EAM) showed that 95 genes were overexpressed specifically in PCa from AAM relative to EAM and 132 were overexpressed in PCa from EAM relative to AAM. Furthermore, systems-level analyses highlight the relevant signaling pathways and functions associated with the EAM- or AAM-specific overexpressed gene sets, for example, inflammation and lipid metabolism. CONCLUSIONS: Results here bring further understanding to the potential for molecular differences for PCa in AAM versus EAM. IMPACT: The results support the notion that therapeutic benefits will be realized when targeted treatments are designed to acknowledge and address a greater spectrum of PCa subtypes and molecular distinctions.