Simultaneous dynamic electrical and structural measurements of functional materials.

A new materials characterization system developed at the XMaS beamline, located at the European Synchrotron Radiation Facility in France, is presented. We show that this new capability allows to measure the atomic structural evolution (crystallography) of piezoelectric materials whilst simultaneously measuring the overall strain characteristics and electrical response to dynamically (ac) applied external stimuli.

The increase of the spin-transfer torque threshold current density in coupled vortex domain walls.

We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.

Spin-transfer-torque-assisted domain-wall creep in a Co/Pt multilayer wire.

We have studied field- and current-driven domain-wall (DW) creep motion in a perpendicularly magnetized Co/Pt multilayer wire by real-time Kerr microscopy. The application of a dc current of density of approximately < 10(7) A/cm2 assisted only the DW creeping under field in the same direction as the electron flow, a signature of spin-transfer torque effects. We develop a model dealing with both bidirectional spin-transfer effects and Joule heating, with the same dynamical exponent mu=1/4 for both field- and current-driven creep, and use it to quantify the spin-transfer efficiency as 3.6+/-0.6 Oe cm2/MA in our wires, confirming the significant nonadiabatic contribution to the spin torque.

Dependence of domain-wall depinning threshold current on pinning profile.

We have investigated the threshold current density required for depinning a domain wall from constrictions in NiFe nanowires, which give rise to pinning potentials of fixed amplitude but variable profile. We observed it to vary linearly with the angle of the triangular constriction. These results are reproduced using micromagnetic simulations including the adiabatic and nonadiabatic spin-torque terms. By curve-fitting the calculated variations to the experimental results, we obtain the nonadiabaticity parameter beta=0.04(+/-0.005) and current spin polarization P=0.51(+/-0.02).

Direct observation of domain wall scattering in patterned Ni80Fe20 and Ni nanowires by current-voltage measurements.

We present measurements of domain wall resistivity, pinned by nanoconstrictions in single layer ferromagnetic wires of Ni80Fe20 and Ni. Unpinning domain walls from the constriction by current-induced switching allows for an unambiguous measurement of their resistivity changes, namely, 1.7% in Ni80Fe20 and 1.82% in Ni and both positive, which supports the theory of spin-dependent impurity scattering. By deriving an empirical relation for the various constriction widths, the large percentage changes of resistivity in ballistic nanocontacts are reproduced, showing a correlation between domain wall magnetoresistance and ballistic magnetoresistance.