Evolution of the full energy structure of Mn4+ in fluoride phosphors under high pressure conditions.

This paper analyzes the photoluminescence excitation and emission spectra of fluoride phosphors doped with Mn4+: KNaSiF6:Mn4+, Rb2GeF6:Mn4+, and Na3HTiF8:Mn4+ under high pressure conditions. From the optical spectra, the pressure-dependent energies of optically active 4T2, 4T1, and 2E crystal field subterms of Mn4+ have been determined in the 0-30 GPa pressure range. A strong blueshift of the 4T2 and 4T1 subterms was found, as expected from the Tanabe-Sugano diagram for Mn4+ (d3). At the same time, the 2E emitting state exhibited a redshift under pressure - an effect opposite to the prediction of the Tanabe-Sugano diagram. This is a manifestation of the pressure-driven nephelauxetic effect, governed by pressure induced changes of Racah parameters, which demonstrates the necessity of taking into account the Racah parameters for a correct description of Mn4+ emission under pressure. The high pressure experimental data allowed to determine the pressure dependence of crystal field strength parameter Dq and Racah parameters B and C. Finally, obtaining the pressure dependence of Dq and Racah parameters allowed to calculate the full energy structure of the d3 configuration of Mn4+ in KNaSiF6, Rb2GeF6, and Na3HTiF8 in the pressure range of 0-30 GPa. The calculations reproduced the redshift of the 2E emitting state under pressure, as well as gave the pressure shift direction and magnitude for all crystal field subterms of Mn4+ up to 50 000 cm-1 (i.e. the equivalent of the Tanabe-Sugano diagram for high-pressure experiments). The approach presented in this paper can be easily extended for calculating the energy structure of materials doped with isoelectronic Cr3+ as well as other transition metal ions.

Single Crystalline Films of Ce3+-Doped Y3MgxSiyAl5-x-yO12 Garnets: Crystallization, Optical, and Photocurrent Properties.

This research focuses on LPE growth, and the examination of the optical and photovoltaic properties of single crystalline film (SCF) phosphors based on Ce3+-doped Y3MgxSiyAl5-x-yO12 garnets with Mg and Si contents in x = 0-0.345 and y = 0-0.31 ranges. The absorbance, luminescence, scintillation, and photocurrent properties of Y3MgxSiyAl5-x-yO12:Ce SCFs were examined in comparison with Y3Al5O12:Ce (YAG:Ce) counterpart. Especially prepared YAG:Ce SCFs with a low (x, y < 0.1) concentration of Mg2+ and Mg2+-Si4+ codopants also showed a photocurrent that increased with rising Mg2+ and Si4+ concentrations. Mg2+ excess was systematically present in as-grown Y3MgxSiyAl5-x-yO12:Ce SCFs. The as-grown SCFs of these garnets under the excitation of α-particles had a low light yield (LY) and a fast scintillation response with a decay time in the ns range due to producing the Ce4+ ions as compensators for the Mg2+ excess. The Ce4+ dopant recharged to the Ce3+ state after SCF annealing at T > 1000 °C in a reducing atmosphere (95%N2 + 5%H2). Annealed SCF samples exhibited an LY of around 42% and similar scintillation decay kinetics to those of the YAG:Ce SCF counterpart. The photoluminescence studies of Y3MgxSiyAl5-x-yO12:Ce SCFs provide evidence for Ce3+ multicenter formation and the presence of an energy transfer between various Ce3+ multicenters. The Ce3+ multicenters possessed variable crystal field strengths in the nonequivalent dodecahedral sites of the garnet host due to the substitution of the octahedral positions by Mg2+ and the tetrahedral positions by Si4+. In comparison with YAG:Ce SCF, the Ce3+ luminescence spectra of Y3MgxSiyAl5-x-yO12:Ce SCFs greatly expanded in the red region. Using these beneficial trends of changes in the optical and photocurrent properties of Y3MgxSiyAl5-x-yO12:Ce garnets as a result of Mg2+ and Si4+ alloying, a new generation of SCF converters for white LEDs, photovoltaics, and scintillators could be developed.

Enhancement of self-trapped excitons and near-infrared emission in Bi3+/Er3+ co-doped Cs2Ag0.4Na0.6InCl6 double perovskite.

Erbium (Er) complexes are used as optical gain materials for signal generation in the telecom C-band at 1540 nm, but they need a sensitizer to enhance absorption. Na+ substitution for Ag+ and Bi3+ doping at the In3+ site is a possible strategy to enhance the broadband emission of Cs2AgInCl6, which could be used as a sensitizer for energy transfer to rare-earth elements. Herein, self-trapped exciton (STE) energy transfer to Er3+ at 1540 nm in double perovskite is reported. An acid precipitation method was used to synthesize Cs2AgInCl6 and its derivatives with Er3+, Bi3+, and Na+. Bare Cs2AgInCl6:Er emission signals were found to be weak at 1540 nm, but Bi3+ doping increased them by 12 times, and Bi3+ and Na+ doping increased signal intensity by up to 25 times. Electron paramagnetic resonance spectroscopy characterized a decrease in axial symmetry over the Er3+ ions after the substitutions of Na+ and Bi3+ in Cs2AgInCl6 at low temperatures (<7 K) for the first time. Moreover, an increase in pressure compressed the structure, which tuned the STE transition for free exciton emission, and a further increase in pressure distorted the cubic phase above 70 kbar.

Photoluminescence enhancement study in a Bi-doped Cs2AgInCl6 double perovskite by pressure and temperature-dependent self-trapped exciton emission.

Here, we report a halide precursor acid precipitation method to synthesize Cs2AgIn1-xBixCl6 (x = 0, 0.02, 0.04, 0.08, 0.16, 0.32, 0.64, and 1) microcrystals. Cs2AgInCl6 and Bi derivative double perovskites show broadband white light emission via self-trapped excitons (STEs) and have achieved the highest internal quantum efficiency of up to 52.4% at x = 0.08. Synchrotron X-ray diffraction confirmed the linear increase of lattice parameters and cell volume with Bi3+ substitution at In3+ sites. Absorbance, photocurrent excitation, and photoluminescence excitation spectra are used to observe possible transitions from the valence to the conduction band or free exciton (FE) states as well as transitions within local Bi3+ states. The broadband photoluminescence is quenched via a single nonradiative process with an activation energy ΔE = 1490 cm-1 for Cs2AgIn0.92Bi0.08Cl6. Under normal conditions, we observed STE emission, but applying external pressure alters the electronic structure such that at elevated pressure, the only emission via the FE state is observed. We anticipate that structure, temperature and pressure-dependent photoluminescence studies will help the future use of a single-source lead-free double perovskite for white light-emitting diode applications.

Chromium Ion Pair Luminescence: A Strategy in Broadband Near-Infrared Light-Emitting Diode Design.

Portable near-infrared (NIR) light sources are in high demand for applications in spectroscopy, night vision, bioimaging, and many others. Typical phosphor designs feature isolated Cr3+ ion centers, and it is challenging to design broadband NIR phosphors based on Cr3+-Cr3+ pairs. Here, we explore the solid-solution series SrAl11.88-xGaxO19:0.12Cr3+ (x = 0, 2, 4, 6, 8, 10, and 12) as phosphors featuring Cr3+-Cr3+ pairs and evaluate structure-property relations within the series. We establish the incorporation of Ga within the magentoplumbite-type structure at five distinct crystallographic sites and evaluate the effect of this incorporation on the Cr3+-Cr3+ ion pair proximity. Electron paramagnetic measurements reveal the presence of both isolated Cr3+ and Cr3+-Cr3+ pairs, resulting in NIR luminescence at approximately 650-1050 nm. Unexpectedly, the origin of broadband NIR luminescence with a peak within the range 740-820 nm is related to the Cr3+-Cr3+ ion pair. We demonstrate the application of the SrAl5.88Ga6O19:0.12Cr3+ phosphor, which possesses an internal quantum efficiency of ∼85%, a radiant flux of ∼95 mW, and zero thermal quenching up to 500 K. This work provides a further understanding of spectral shifts in phosphor solid solutions and in particular the application of the magentoplumbites as promising next-generation NIR phosphor host systems.

Multi-Site Cation Control of Ultra-Broadband Near-Infrared Phosphors for Application in Light-Emitting Diodes.

Near-infrared (NIR) phosphors are fascinating materials that have numerous applications in diverse fields. In this study, a series of La3Ga5GeO14:Cr3+ phosphors, which was incorporated with Sn4+, Ba2+, and Sc3+, was successfully synthesized using solid-state reaction to explore every cationic site comprehensively. The crystal structures were well resolved by combining synchrotron X-ray diffraction and neutron powder diffraction through joint Rietveld refinements. The trapping of free electrons induced by charge unbalances and lattice vacancies changes the magnetic properties, which was well explained by a Dyson curve in electron paramagnetic resonance. Temperature and pressure-dependent photoluminescence spectra reveal various luminescent properties between strong and weak fields in different dopant centers. The phosphor-converted NIR light-emitting diode (pc-NIR LED) package demonstrates a superior broadband emission that covers the near-infrared (NIR) region of 650-1050 nm. This study can provide researchers with new insight into the control mechanism of multiple-cation-site phosphors and reveal a potential phosphor candidate for practical NIR LED application.

Efficient Luminescence from CsPbBr3 Nanoparticles Embedded in Cs4PbBr6.

Cs4PbBr6 is regarded as an outstanding luminescent material with good thermal stability and optical performance. However, the mechanism of green emission from Cs4PbBr6 has been controversial. Here we show that isolated CsPbBr3 nanoparticles embedded within a Cs4PbBr6 matrix give rise to a "normal" green luminescence while superfluorescence at longer wavelengths is suppressed. High-resolution transmission electron microscopy shows that the embedded CsPbBr3 nanoparticles are around 3.8 nm in diameter and are well-separated from each other, perhaps by a strain-driven mechanism. This mechanism may enable other efficient luminescent composites to be developed by embedding optically active nanoparticles epitaxially within inert host lattices.

Broadband NaK2Li[Li3SiO4]4:Ce Alkali Lithosilicate Blue Phosphors.

Phosphors with a rigid and symmetrical structure are urgently needed. The alkali lithosilicate family (A[Li3SiO4]) has been extensively studied with a narrow emission band due to its unique cuboid-coordinated environment and rigid structure. However, here we demonstrate for the first time Ce-doped NaK2Li[Li3SiO4]4 phosphors with a broad emission band, a high internal quantum efficiency (85.6%), and excellent thermal stability. Photoluminescence indicates the Ce's preference to occupy the Na+ site, leading to a strong blue color emission with peak maxima at 417 and 450 nm. Temperature- and pressure-dependent photoluminescence reveals thermal stability and a phase transition. Moreover, the X-ray absorption near-edge structure reveals the mixing of Ce3+ and Ce4+ in the materials; this result differs from that of Eu2+-doped A[Li3SiO4] phosphors. The charge compensation process is then proposed to explain this difference. This study not only provides insights into Ce-doped UCr4C4-type phosphors but also explains the charge compensation mechanism of the aliovalent doping process.

Study of persistent luminescence and thermoluminescence in SrSi2N2O2:Eu2+,M3+ (M = Ce, Dy, and Nd).

The process of persistent luminescence or glow-in-the-dark, the delayed emission of light of irradiated substances, has long fascinated researchers, who have made efforts to explain the underlying physical phenomenon as well as put it to practical use. However, persistent luminescence is an elusive and difficult process, both in terms of controlling or altering its properties, as well as providing a quantitative description. In this paper, we used SrSi2N2O2:Eu2+ as a model persistent phosphor, characterized by the broad distribution of structural defects and exhibiting long-lasting Eu2+ luminescence that is visible for a few minutes after switching off UV light. We investigated the persistent luminescence process by two complementary methods, namely, thermoluminescence and temperature-dependent persistent luminescence decay measurements. Analysis of experimental data allowed us to determine the depth distribution of traps, and allowed us to distinguish two different mechanisms by which the emission is delayed. The first, the temperature-dependent mechanism, is related to trap activation, while the second, temperature-independent mechanism is related to carrier migration. Finally, we employed the strategy of the co-doping of the phosphor SrSi2N2O2:Eu2+,M3+ (M = Ce, Nd, Dy) to modify the persistent luminescence properties.

Thermally Stable and Deep Red Luminescence of Sr1-xBax[Mg2Al2N4]:Eu2+ (x = 0-1) Phosphors for Solid State and Agricultural Lighting Applications.

The systematic substitution of Ba in the Sr site of Sr[Mg2Al2N4]:Eu2+ generates a deep-red-emitting phosphor with enhanced thermal luminescence properties. Gas pressure sintering (GPS) of all-nitride starting materials in Molybdenum (Mo) crucibles yields pure-phase red-orange-colored phosphors. Peaks in the synchrotron X-ray diffraction (SXRD) data show a systematic shift toward smaller angles due to the introduction of the larger Ba cation in the same crystal structure. The photoluminescence property reveals that Ba substitution shifts the original emission wavelength of Sr[Mg2Al2N4]:Eu2+ (625 nm) toward ∼690 nm for Ba[Mg2Al2N4]:Eu2+. Thermal stability measurement of Sr1-xBax[Mg2Al2N4] indicates a systematic increase in stability from x = 0 to x = 1. X-ray absorption near-edge spectroscopy (XANES) results demonstrate the coexistence of Eu2+ and Eu3+. The red-shift and the enhanced thermal stability reveals that the distance of the emitting 5d level to the conduction band of Ba[Mg2Al2N4]:Eu2+ is large. The ionic size mismatch of Eu occupying a Ba site reduces the symmetry, thereby further splitting the degenerate emitting 5d level and lowering the energy of the emitting center. The development of deep-red phosphors emitting at 670-690 nm (x = 0.8-1.0) offers possible candidates for plant lighting applications.

Chromium(III)-Doped Fluoride Phosphors with Broadband Infrared Emission for Light-Emitting Diodes.

Two types of infrared fluoride phosphors, Cr3+-doped K3AlF6 and K3GaF6, were developed in this research. The K3Al1-xF6:xCr3+ and K3Ga1-yF6:yCr3+ fluoride phosphors were proven to be pure phase via X-ray diffraction refinement, which demonstrated that the procedure can be applied to large-scale production. Electron paramagnetic resonance measurements indicated that Cr3+ ions in cubic with respect to noncubic are coupled better with K3GaF6 than with K3AlF6. The main differences between these two phosphors, the site symmetry and pressure behavior of the spectra, were obtained in temperature- and pressure-dependent spectra. According to the calculation results, Cr3+ in fluorine coordination at ambient pressure indicates an intermediate crystal field. For the phosphor-converted light-emitting diodes (LEDs) fabricated from these two phosphors, the spectral range is from 650 to 1000 nm, which resulted in a radiant flux of 7-8 mW with an input power of 1.05 W. The research reveals detailed luminous properties, which will lead to a new way of studying Cr3+-doped fluoride phosphors and their application in LEDs.

Revisiting Cr3+-Doped Bi2Ga4O9 Spectroscopy: Crystal Field Effect and Optical Thermometric Behavior of Near-Infrared-Emitting Singly-Activated Phosphors.

The increasing interest in the development of ratiometric optical thermal sensors has led to a wide variety of new systems with promising properties. Among them, singly-doped ratiometric thermometers were recently demonstrated to be particularly reliable. With the aim to discuss the development of an ideal optical thermal sensor, a combined experimental and theoretical insight into the spectroscopy of the Bi2Ga4O9:Cr3+ system is reported showing the importance of an insightful analysis in a wide temperature range. Low-temperature photoluminescence analysis (from 10 K) and the temperature dependence of the lifetime investigation, together with the crystal field analysis and the modeling of the thermal quenching process, allow the estimation of key parameters such as the Debye temperature (cutoff frequency), the Huang-Rhys parameter, and the energy barrier between 2Eg and 4T2g. Additionally, by considering the reliable class of singly-doped ratiometric thermometers based on a couple of excited states obeying the Boltzmann law, the important role played by the absolute sensitivity was discussed and the great potential of Cr3+ singly-activated systems was demonstrated. The results may provide new guidelines for the design of reliable optical thermometers with outstanding and robust performances.

Comparison of quenching mechanisms in Gd3Al5-xGaxO12:Ce3+ (x = 3 and 5) garnet phosphors by photocurrent excitation spectroscopy.

In this work we present the results of photocurrent excitation spectroscopy (PCE) of Gd3Al2Ga3O12:Ce3+ (GAGG:Ce3+) and Gd3Ga5O12:Ce3+ (GGG:Ce3+) performed at temperatures ranging from 100 to 500 K supplemented by spectroscopic measurements (steady state and time resolved photoluminescence spectroscopy) performed at temperatures ranging from 10 to 500 K and at high pressure up to 300 kbar. The PCE spectra contain bands related to transitions from the ground state 2F5/2 of the 4f1 electronic configuration to the crystal field split states related to the 5d1 electronic configuration of Ce3+. This implicates the presence of the autoionization process - transfer of electrons from the localized, excited states of Ce3+ to the conduction band (CB), directly linked to luminescence quenching of Ce3+. The mechanism of autoionization of GAGG:Ce3+ and GGG:Ce3+ was determined to be different on the grounds of differences in temperature dependence of photocurrent intensity. The latter system exhibits autoionization, which occurs when all of the 5d excited states are degenerated with the CB, whereas in the former system, the autoionization process is thermally assisted with an activation energy barrier (distance to the edge of the CB) of approximately 1600 cm-1. In GGG:Ce3+ the degeneracy of 5d1 states of Ce3+ was lifted by application of high pressure, shifting the edge of the CB up and exposing Ce3+ luminescence at 20 kbar. Further spectroscopic analyses of the pressure-temperature dependence of the luminescence decay time as well as the temperature dependence of photocurrent intensity of GGG:Ce3+ have independently shown existence of a luminescence quenching state located approximately 600 cm-1 below the CB, attributed to the impurity trapped exciton.

Spectroscopic properties of high-temperature sintered SrS:0.05%Ce3+ under high hydrostatic pressure.

Luminescence properties of SrS:Ce pellets sintered at 1700 °C were investigated under high pressure. Two different Ce3+-related emissions were confirmed to appear in the blue-green and red parts of the spectrum and were shown to shift significantly and linearly to longer wavelengths with increasing pressure. Changes in decay times of both emissions were also thoroughly analyzed. The results confirmed that Ce3+ ion pairing/clustering occurring due to their enhanced mobility at high temperatures is responsible for the appearance of the recently reported red Ce3+ emission in sintered SrS:Ce pellets.

Control of Luminescence by Tuning of Crystal Symmetry and Local Structure in Mn4+ -Activated Narrow Band Fluoride Phosphors.

Mn4+ -doped fluoride phosphors have been widely used in wide-gamut backlighting devices because of their extremely narrow emission band. Solid solutions of Na2 (Six Ge1-x )F6 :Mn4+ and Na2 (Gey Ti1-y )F6 :Mn4+ were successfully synthesized to elucidate the behavior of the zero-phonon line (ZPL) in different structures. The ratio between ZPL and the highest emission intensity υ6 phonon sideband exhibits a strong relationship with luminescent decay rate. First-principles calculations are conducted to model the variation in the structural and electronic properties of the prepared solid solutions as a function of the composition. To compensate for the limitations of the Rietveld refinement, electron paramagnetic resonance and high-resolution steady-state emission spectra are used to confirm the diverse local environment for Mn4+ in the structure. Finally, the spectral luminous efficacy of radiation (LER) is used to reveal the important role of ZPL in practical applications.

Temperature effect on the emission spectra of narrow band Mn4+ phosphors for application in LEDs.

Temperature dependence of the luminescence shape and decay time of narrow band Mn4+ fluoride phosphors: Rb2GeF6:Mn4+ and KNaSiF6:Mn4+ was investigated. The temperature changes in the relative intensity between the zero-phonon line and both phonon sidebands were observed in both samples. The sideband spectra consist of three lines related to interaction with three different phonon modes labeled ν3, ν4 and ν6. We present a comprehensive quantum theory which allows calculation of the luminescence intensity and the luminescence lifetime by simultaneously taking into account odd parity crystal fields, odd parity phonon modes and spin-orbit coupling. Since we include all modes, for which the respective interaction strengths and energies of the phonons are known, our approach does not involve any free parameters. We also discuss our results in relation to the temperature dependence of the lifetime of the 2Eg → 4A2g transition, taking into account the quantum efficiency of the system and the migration of the excitation energy. The presented model is applicable to all materials doped with Mn4+ ions and also to any narrow line emitting phosphor, where a zero-phonon line and phonon structure is simultaneously observed in the emission spectrum.

Narrow Red Emission Band Fluoride Phosphor KNaSiF6:Mn(4+) for Warm White Light-Emitting Diodes.

Red phosphors AMF6:Mn(4+) (A = Na, K, Cs, Ba, Rb; M = Si, Ti, Ge) have been widely studied due to the narrow red emission bands around 630 nm. The different emission of the zero-phonon line (ZPL) may affect the color rendering index of white light-emitting diodes (WLED). The primary reason behind the emergence and intensity of ZPL, taking KNaSiF6:Mn(4+) as an example, was investigated here. The effects of pressure on crystal structure and luminescence were determined experimentally and theoretically. The increase of band gap, red shift of emission spectrum and blue shift of excitation spectrum were observed with higher applied pressure. The angles of ∠FMnF and ∠FMF(M = Si, Ti, Ge) were found clearly distorted from 180° in MF6(2-) octahedron with strong ZPL intensity. The larger distorted SiF6(2-) octahedron, the stronger ZPL intensity. This research provides a new perspective to address the ZPL intensity problem of the hexafluorosilicate phosphors caused by crystal distortion and pressure-dependence of the luminescence. The efficacy of the device featuring from Y3Al5O12:Ce(3+) (YAG) and KNaSiF6:Mn(4+) phosphor was 118 lm/W with the color temperature of 3455 K. These results reveal that KNaSiF6:Mn(4+) presents good luminescent properties and could be a potential candidate material for application in back-lighting systems.