ABSTRACT
Tetrahedrites, due to their promising thermoelectric properties, are one of the materials being investigated for use in thermoelectric generators. One problem is the lack of n-type tetrahedrites, which would be beneficial for the design of tetrahedrite thermoelectric modules. Preliminary theoretical studies have shown that elements from groups I and II can be introduced into the structural voids of tetrahedrite, acting as donor dopants, and should enable n-type conductivity. Therefore, in this work, an attempt was made to obtain and study magnesium-doped tetrahedrites. A series of samples, MgxCu12Sb4S13, with different magnesium contents were obtained and their phase and chemical compositions were characterized. It was observed that the structural changes occurring upon doping indicate that Mg atoms are likely to be embedded in the structural voids. The experimental studies have been supported by electronic structure calculations indicating that the most likely location of Mg is in the structural voids at the 6b Wyckoff position. Seebeck coefficient and resistivity measurements showed that doping with Mg reduces the concentration of holes, which is consistent with the predicted donor character of the dopant. However, the introduction of magnesium in sufficient amounts to achieve n-type conductivity was not successful.
ABSTRACT
The aim of this work was to obtain dense Cu2S superionic thermoelectric materials, homogeneous in terms of phase and chemical composition, using a very fast and cheap induction-melting technique. The chemical composition was investigated via scanning electron microscopy (SEM) combined with an energy-dispersive spectroscopy (EDS) method, and the phase composition was established by X-ray diffraction (XRD). The thermoelectric figure of merit ZT was determined on the basis of thermoelectric transport properties, i.e., Seebeck coefficient, electrical and thermal conductivity in the temperature range of 300-923 K. The obtained values of the ZT parameter are comparable with those obtained using the induction hot pressing (IHP) technique and about 30-45% higher in the temperature range of 773-923 K in comparison with Cu2S samples densified with the spark plasma sintering (SPS) technique.
ABSTRACT
The aim of the work was to obtain copper (I) selenide Cu2Se material with excellent thermoelectric properties, synthesized using the hydrothermal method and densified by the spark plasma sintering (SPS) method. Chemical and phase composition studies were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) methods. Measurements of thermoelectric transport properties, i.e., electrical conductivity, the Seebeck coefficient, and thermal conductivity in the temperature range from 300 to 965 K were carried out. Based on these results, the temperature dependence of the thermoelectric figure of merit ZT as a function of temperature was determined. The obtained, very high ZT parameter (ZT~1.75, T = 965 K) is one of the highest obtained so far for undoped Cu2Se.
ABSTRACT
Neutron diffraction experiments and Korringa-Kohn-Rostoker with coherent potential approximation electronic band structure calculations as well as electrical resistivity measurements have been performed on polycrystalline Mo(3-x)Ru(x)Sb(7) samples for 0 < or = x < or = 1. Neutron diffraction studies have been undertaken at room temperature and extended down to 4 K to get a better understanding of the crystalline structure modifications as the Ru content increases. Both structural and chemical characterizations have unambiguously revealed a solubility limit of the Ru atoms close to 0.8. Electronic band structure calculations have provided theoretical evidence of a progressive transition from a metalliclike state (x = 0) toward a semiconducting-like character as x = 1 is approached, although the solubility limit of Ru precludes a crossover to a semiconducting behavior. The theoretical prediction has been experimentally confirmed by low-temperature electrical resistivity measurements from 2 up to 350 K.
