Transport current and magnetization of Bi-2212 wires above liquid Helium temperature for cryogen-free applications.

Since the discovery of high temperature superconductors, a possible cryogen-free scenario has always been wished. Nowadays, liquid Helium is running out, and it is likely that the cooling by will be a large part of the costs of any superconducting system. Bi-2212 wires at temperature higher than 4.2 K still show a very high irreversibility field and thus a deep investigation of their properties in such a range of temperature is very useful in order to assess the applicability in high field cryogen-free magnets. Here electrical transport and magnetic properties characterization at variable temperature and magnetic field on our "GDG-processed" wires are reported together with a well-described original approach to calculate the irreversibility field Hirr. This study is devoted to provide reference data on the behaviour of the only isotropic wire for high field application with an eye to the performances at temperatures above 4.2 K.

Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport.

The origin of (ferro)magnetic ordering in transition metal doped ZnO is a still open question. For applications it is fundamental to establish if it arises from magnetically ordered impurity clusters embedded into the semiconducting matrix or if it originates from ordering of magnetic ions dilute into the host lattice. In this latter case, a reciprocal effect of the magnetic exchange on the charge carriers is expected, offering many possibilities for spintronics applications. In this paper we report on the relationship between magnetic properties and free charge density investigated by using Zinc oxide based field effect transistors, in which the charge carrier density is modulated by more than 4 order of magnitude, from 1016 to 1020 e-/cm3. The magnetotransport properties are employed to probe the magnetic status of the channel both in pure and cobalt doped zinc oxide transistors. We find that it is widely possible to control the magnetic scattering rates by field effect. We believe that this finding is a consequence of the modulation of magnetization and carrier spin polarization by the electric field. The observed effects can be explained by the change in size of bound magnetic polarons that induces a percolation magnetic ordering in the sample.