Low-Temperature Deposition of Transparent Conducting Films Applied to Flexible Electrochromic Devices.

Here, we compare two different transparent conducting oxides (TCOs), namely indium tin oxide (ITO) and indium zinc tin oxide (IZTO), fabricated as transparent conducting films using processes that require different temperatures. ITO and IZTO films were prepared at 230 °C and at room temperature, respectively, on glass and polyethylene terephthalate (PET) substrates using reactive magnetron sputtering. Electrochromic WO3 films deposited on ITO-based and IZTO-based ECDs using vacuum cathodic arc plasma (CAP) were investigated. IZTO-based ECDs have higher optical transmittance modulation, ΔT = 63% [from Tbleaching (90.01%) to Tcoloration (28.51%)], than ITO-based ECDs, ΔT = 59%. ECDs consisted of a working electrochromic electrode (WO3/IZTO/PET) and a counter-electrode (Pt mesh) in a 0.2 M LiClO4/perchlorate (LiClO4/PC) liquid electrolyte solution with an active area of 3 cm × 4 cm a calculated bleaching time tc of 21.01 s and a coloration time tb of 4.7 s with varying potential from -1.3 V (coloration potential, Vc) to 0.3 V (bleaching potential, Vb).

Fast response of complementary electrochromic device based on WO3/NiO electrodes.

Nanoporous structures have proven as an effective way for enhanced electrochromic performance by providing a large surface area can get fast ion/electron transfer path, leading to larger optical modulation and fast response time. Herein, for the first time, application of vacuum cathodic arc plasma (CAP) deposition technology to the synthesis of WO3/NiO electrode films on ITO glass for use in fabricating complementary electrochromic devices (ECDs) with a ITO/WO3/LiClO4-Perchlorate solution/NiO/ITO structure. Our objective was to optimize electrochromic performance through the creation of electrodes with a nanoporous structure. We also examined the influence of WO3 film thickness on the electrochemical and optical characteristics in terms of surface charge capacity and diffusion coefficients. The resulting 200-nm-thick WO3 films achieved ion diffusion coefficients of (7.35 × 10-10 (oxidation) and 4.92 × 10-10 cm2/s (reduction)). The complementary charge capacity ratio of WO3 (200 nm thickness)/NiO (60 nm thickness) has impressive reversibility of 98%. A demonstration ECD device (3 × 4 cm2) achieved optical modulation (ΔT) of 46% and switching times of 3.1 sec (coloration) and 4.6 sec (bleaching) at a wavelength of 633 nm. In terms of durability, the proposed ECD achieved ΔT of 43% after 2500 cycles; i.e., 93% of the initial device.

Indium-Zinc-Tin-Oxide Film Prepared by Reactive Magnetron Sputtering for Electrochromic Applications.

This paper reports on the fabrication of indium-zinc-tin-oxide (IZTO) transparent conductive film deposited by direct current (DC) reactive magnetron sputtering. The electrical, structural, and optical properties of IZTO film were investigated by Hall measurement, X-ray diffraction (XRD), and optical transmission spectroscopy with various sputtering powers. The IZTO film prepared used power at 100 W showed the lowest resistivity of 5.2 × 10-4 Ω cm. To accomplish rapid switching and high optical modulation, we have fabricated an electrochromic device (ECD) consisting of an working electrode (WO3 electrode film deposited on IZTO/ITO/glass) and a counter-electrode (Pt mesh) in 0.2 M LiClO4/PC liquid solution. The device demonstrated an optical contrast of 44% and switching times of 4.6 s and 8.1 s for the coloring and bleaching state, respectively, at the wavelength of 550 nm.