Suppression of Adverse Phase Transition of Layered Oxide Cathode via Local Electronic Structure Regulation for High-Capacity Sodium-Ion Batteries.

Advancing the high-voltage stability of the O3-type layered cathodes for sodium-ion batteries is critical to boost their progress in energy storage applications. However, this type of cathode often suffers from intricate phase transition and structural degradation at high voltages (i.e., >4.0 V vs Na+/Na), resulting in rapid capacity decay. Here, we present a Li/Ti cosubstitution strategy to modify the electronic configuration of oxygen elements in the O3-type layered oxide cathode. This deliberate modulation simultaneously mitigates the phase transitions and counteracts the weakening of the shielding effect resulting from the extraction of sodium ions, thus enhancing the electrostatic bonding within the TM layer and inducing and optimizing the O3-OP2 phase transition occurring in the voltage range of 2.0-4.3 V. Consequently, the cosubstituted NaLi1/9Ni1/3Mn4/9Ti1/9O2 exhibits an astounding capacity of 161.2 mAh g-1 in the voltage range of 2.0-4.3 V at 1C, and stable cycling up to 100 cycles has been achieved. This work shows the impact mechanism of element substitution on interlayer forces and phase transitions, providing a crucial reference for the optimization of O3-type materials.

Harnessing Acoustic Dispersions in YX-LN/SiO2/Si SH-SAW Resonators for Electromechanical Coupling Optimization and Rayleigh Mode Suppression.

In this study, we investigate the dispersive behavior of the electromechanical coupling coefficient ( [Formula: see text]) for shear-horizontal (SH) and Rayleigh surface acoustic wave (SAW) modes in a YX-LiNbO3 (LN)/SiO2/Si substrate across various wavelengths. Due to the difference in velocity dispersion between the SH and Rayleigh modes, mode coupling can be observed when these two modes operate at closely proximate frequencies, leading to a notable variation in their [Formula: see text]. With a careful design, SH and Rayleigh modes can be tuned to achieve a mode-decoupling state for enhancing [Formula: see text] of the SH-SAW and suppressing the presence of the Rayleigh mode in YX-LN/SiO2/Si. Consequently, a series of proof-of-concept SH-SAW resonators with wavelengths ( λ ) ranging from 1.6 to [Formula: see text] are fabricated. The optimized resonator with a λ of [Formula: see text] exhibits a resonant frequency of 1.064 GHz, an effective [Formula: see text] of 47.7%, a maximum Bode- Q of around 900, and an 18-dB rejection of spurious modes spanning from 0.5 to 3 GHz, without the presence of the Rayleigh mode.

Amorphous Aluminum Oxide-Coated NaFe0.33Ni0.33Mn0.33O2 Cathode Materials: Enhancing Interface Charge Transfer for High-Performance Sodium-Ion Batteries.

Layered cathode materials for sodium-ion batteries (SIBs) have gained considerable attention as promising candidates owing to their high capacity and potential for industrial scalability. Nonetheless, challenges arise from stress and structural degradation resulting from the deposition of larger ion radius species, leading to diminished cyclic stability and rate performance. In this study, we present a novel and straightforward strategy that combines the synergistic effects of an amorphous aluminum oxide coating and aluminum ion doping. This approach effectively addresses the issues of grain cracking and expands the interlayer spacing of alkali metal ions in SIB materials, thereby enhancing their overall performance. Consequently, it optimizes the diffusion of charge carriers and facilitates interfacial charge transfer, leading to remarkable improvements in the performance of the NaNi0.33Mn0.33Fe0.33O2 material with 0.4 wt % amorphous aluminum oxide coating (NNMF-0.4A), which exhibits reversible capacities of 135.7, 114.3, 106.8, 99.9, 89.5, and 77.1 mAh g-1 at 0.1, 0.5, 1, 2, 5, and 10 C, respectively. Furthermore, the NNMF-0.4A material maintains a capacity of 76.7 mA g-1 after 500 cycles at a current density of 800 mA g-1 (10 C), with a capacity retention rate of 98.2%. Our findings present a groundbreaking pathway for modifying high-power sodium-ion battery cathode materials, contributing to the advancement of sustainable energy storage technologies.

Acoustically driven electromagnetic radiating elements.

The low propagation loss of electromagnetic radiation below 1 MHz offers significant opportunities for low power, long range communication systems to meet growing demand for Internet of Things applications. However, the fundamental reduction in efficiency as antenna size decreases below a wavelength (30 m at 1 MHz) has made portable communication systems in the very low frequency (VLF: 3-30 kHz) and low frequency (30-300 kHz) ranges impractical for decades. A paradigm shift to piezoelectric antennas utilizing strain-driven currents at resonant wavelengths up to five orders of magnitude smaller than electrical antennas offers the promise for orders of magnitude efficiency improvement over the electrical state-of-the-art. This work demonstrates a lead zirconate titanate transmitter > 6000 times more efficient than a comparably sized electrical antenna and capable of bit rates up to 60 bit/s. Detailed analysis of design parameters offers a roadmap for significant future improvement in both radiation efficiency and data rate.

GHz Low-Loss Acoustic RF Couplers in Lithium Niobate Thin Film.

We present the first group of GHz low-loss acoustic radio frequency (RF) couplers using the fundamental symmetric (S0) mode in X-cut lithium niobate thin films. The demonstrated multistrip couplers (MSCs) significantly surpass the insertion loss (IL) and the operating frequency of the previous works in more compact structures, thanks to the large electromechanical coupling and low loss of S0 in lithium niobate. The design space of S0 MSCs is first explored. Devices with different coupling factors are fabricated using different numbers of strips. Based on the S0 testbed with an IL of 4.5 dB at 1 GHz, the hybrid coupler shows an IL of 7.5 dB, while the track changer shows an IL of 5.1 dB, over a 3-dB fractional bandwidth of 8%. Couplers at different frequencies (between 0.75 and 1.55 GHz) are also investigated. Upon further optimizations, the S0 MSC platform can potentially enable low-loss wideband signal processing functions toward an RF acoustic component kit.

GHz Broadband SH0 Mode Lithium Niobate Acoustic Delay Lines.

We present the first group of GHz broadband SH0 mode acoustic delay lines (ADLs). The implemented ADLs adopt unidirectional transducer designs in a suspended X-cut lithium niobate thin film. The design space of the SH0 mode ADLs at GHz is first theoretically investigated, showing that the large coupling and sufficient spectral clearance to adjacent modes collectively enable the broadband performance of SH0 delay lines. The fabricated devices show 3-dB fractional bandwidth ranging from 4% to 34.3% insertion loss between 3.4 and 11.3 dB. Multiple delay lines have been demonstrated with center frequencies from 0.7 to 1.2 GHz, showing great frequency scalability. The propagation characteristics of SH0 in lithium niobate thin film are experimentally extracted. The demonstrated ADLs can potentially facilitate broadband signal processing applications.

Gigahertz Low-Loss and Wideband S0 Mode Lithium Niobate Acoustic Delay Lines.

We present the first group of gigahertz S0 mode low loss and wideband acoustic delay lines (ADLs). The ADLs use a single-phase unidirectional transducers (SPUDT) design to launch and propagate the S0 mode in an X-cut lithium niobate thin film with large electromechanical coupling and low damping. In this work, the theoretical performance bounds of S0 mode ADLs are first investigated, significantly surpassing those in state-of-the-art. The design tradeoffs of S0 mode ADLs, when scaled to the gigahertz frequency range, are also discussed. The fabricated miniature ADLs show a fractional bandwidth (FBW) of 4% and a minimum insertion loss (IL) of 3.2 dB, outperforming the incumbent surface acoustic wave (SAW) counterparts, and covering a wide range of delays from 20 to 900 ns for digitally addressable delay synthesis. Multiple ADLs with center frequencies from 0.9 to 2 GHz have been demonstrated, underscoring their great frequency scalability. The propagation properties of S0 waves in lithium niobate at the gigahertz range are experimentally extracted. The demonstrated ADLs can potentially enable wide-range and high-resolution delay synthesis that is highly sought after for the self-interference cancellation in full-duplex radios.

Differentially piezoresistive transduction of high-Q encapsulated SOI-MEMS resonators with sub-100 nm gaps.

A differentially piezoresistive (piezo-R) readout proposed for single-crystal-silicon (SCS) microelectromechanical systems (MEMS) resonators is implemented in a foundrybased resonator platform, demonstrating effective feedthrough cancellation using just simple piezoresistors from the resonator supports while maximizing their capacitively transduced driving areas. The SCS resonators are fabricated by a CMOS foundry using an SOI-MEMS technology together with a polysilicon refill process. A high electromechanical coupling coefficient is attained by the use of 50-nm transducer gap spacing. Moreover, a vacuum package of the fabricated resonators is carried out through wafer-level bonding process. In this work, the corner supporting beams of the resonator serve not only mechanical supports but also piezoresistors for detecting the motional signal, hence substantially simplifying the overall resonator design to realize the piezo-R sensing. In addition, the fabricated resonators are capable of either capacitive sensing or piezo-R detection under the same capacitive drive. To mitigate feedthrough signals from parasitics, a differential measurement configuration of the piezo-R transduction is implemented in this work, featuring more than 30-dB improvement on the feedthrough level as compared with the single-ended piezo-R counterpart and purely capacitive sensing readout. Furthermore, the high-Q design of the mechanical supports is also investigated, offering Q more than 10 000 with efficient piezo-R transduction for MEMS resonators.

Mechanically coupled CMOS-MEMS free-free beam resonator arrays with enhanced power handling capability.

Integrated CMOS-MEMS free-free beam resonator arrays operated in a standard two-port electrical configuration with low motional impedance and high power handling capability, centered at 10.5 MHz, have been demonstrated using the combination of pull-in gap reduction mechanism and mechanically coupled array design. The mechanical links (i.e., coupling elements) using short stubs connect each constituent resonator of an array to its adjacent ones at the high-velocity vibrating locations to accentuate the desired mode and reject all other spurious modes. A single second-mode free-free beam resonator with quality factor Q > 2200 and motional impedance R(m) < 150 kΩ has been used to achieve mechanically coupled resonator arrays in this work. In array design, a 9-resonator array has been experimentally characterized to have performance improvement of approximately 10× on motional impedance and power handling as compared with that of a single resonator. In addition, the two-port electrical configuration is much preferred over a one-port configuration because of its low-feedthrough and high design flexibility for future oscillator and filter implementation.