Improved electronic uniformity and nanoscale homogeneity in template-grown CsPbBr3 nanorods.

One-dimensional metal halide perovskites are among the most promising candidate materials for optoelectronic devices. However, the heterogeneity and fast degradation of perovskite nanowires (NWs) and nanorods (NRs) synthesized using conventional approaches impose a bottleneck for their optoelectronic applications. Recently, all-inorganic perovskite CsPbBr3 NRs with tailored dimensions, crafted using an amphiphilic bottlebrush-like block copolymer (BBCP) as nanoreactors, have demonstrated enhanced stabilities. Herein, we report the electronic investigation into these template-grown CsPbBr3 NRs using dielectric force microscopy (DFM), a contactless, nondestructive imaging technique. All freshly prepared CsPbBr3 NRs exhibited ambipolar behaviors for up to two months after sample synthesis. A transition from ambipolar to p-type behaviors occurred after two months, and nearly all NRs completed the transition within two weeks. Moreover, template-grown CsPbBr3 NRs displayed better nanoscale electronic homogeneity compared to their conventional counterparts. The improved electronic uniformity and nanoscale homogeneity place the template-grown CsPbBr3 NRs in a unique advantageous position for optoelectronic applications.

Silicon-Based Glucose Oxidase Working Electrode for Glucose Sensing.

We created a glucose oxidase (GOx) working electrode on a silicon-on-insulator (SOI) wafer for glucose sensing. The SOI wafer was electrically connected to a copper wire, and the GOx was immobilized onto the hydrophilized SOI surface via silanization with aminopropyltriethoxysilane and glutaraldehyde. Electrochemical analysis (i.e., cyclic voltammetry) was employed to identify the sensing mechanism and to evaluate the performance of these SOI-GOx glucose sensors. The response of the SOI-GOx working electrode was significantly higher in the presence of oxygen than that without oxygen, indicating that a hydrogen peroxide pathway dominated in our SOI-GOx electrode. The height of cathodic peaks increased linearly with the increase of glucose concentrations up to 15 mM. The SOI-GOx working electrode displayed good stability after more than 30 cycles. On the 133rd day after the electrode was made, although the response of the SOI-GOx electrode dropped to about one-half of its original response, it was still capable of distinguishing different glucose concentrations. This work suggests that the SOI-GOx working electrode that we developed might be a promising candidate for implantable glucose sensors.

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources.

The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the creation of Ge films on Si substrates through physical vapor deposition of toxin-free solid Ge sources. Structural characterization indicates that a high tensile strain is introduced in the Ge film during the deposition process. We attribute the presence of such a tensile strain to the difference in thermal expansion coefficient between Si and Ge. A Ge peak, centered at ~2100 nm, is evident in the photoluminescence spectra of these materials, which might result from direct band gap photoluminescence alone, or from superposition of direct band gap and indirect band gap photoluminescence. These Ge-on-Si materials are therefore promising in light emission applications.

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane.

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.

Dielectric force microscopy: imaging charge carriers in nanomaterials without electrical contacts.

Nanomaterials are increasingly used in electronic, optoelectronic, bioelectronic, sensing, and energy nanodevices. Characterization of electrical properties at nanometer scales thus becomes not only a pursuit in basic science but also of widespread practical need. The conventional field-effect transistor (FET) approach involves making electrical contacts to individual nanomaterials. This approach faces serious challenges in routine characterization due to the small size and the intrinsic heterogeneity of nanomaterials, as well as the difficulties in forming Ohmic contact with nanomaterials. Since the charge carrier polarization in semiconducting and metallic materials dominates their dielectric response to external fields, detecting dielectric polarization is an alternative approach in probing the carrier properties and electrical conductivity in nanomaterials. This Account reviews the challenges in the electrical conductivity characterization of nanomaterials and demonstrates that dielectric force microscopy (DFM) is a powerful tool to address the challenges. DFM measures the dielectric polarization via its force interaction with charges on the DFM tip and thus eliminates the need to make electrical contacts with nanomaterials. Furthermore, DFM imaging provides nanometer-scaled spatial resolution. Single-walled carbon nanotubes (SWNTs) and ZnO nanowires are used as model systems. The transverse dielectric permittivity of SWNTs is quantitatively measured to be ∼10, and the differences in longitudinal dielectric polarization are exploited to distinguish metallic SWNTs from semiconducting SWNTs. By application of a gate voltage at the DFM tip, the local carrier concentration underneath the tip can be accumulated or depleted, depending on charge carrier type and the density of states near the Fermi level. This effect is exploited to identify the conductivity type and carrier type in nanomaterials. By making comparison between DFM and FET measurements on the exact same SWNTs, it is found that the DFM gate modulation ratio, which is the ratio of DFM signal strengths at different gate voltage, is linearly proportional to the logarithm of FET device on/off ratio. A Drude-level model is established to explain the semilogarithmic correlation between DFM gate modulation ration and FET device on/off ratio and simulate the dependence of DFM force on charge carrier concentration and mobility. Future developments towards DFM imaging of charge carrier concentration or mobility in nanomaterials and nanodevices can thus be expected.

Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes.

To assess possible improvements in the electronic performance of two-dimensional electron gases (2DEGs) in silicon, SiGe/Si/SiGe heterostructures are grown on fully elastically relaxed single-crystal SiGe nanomembranes produced through a strain engineering approach. This procedure eliminates the formation of dislocations in the heterostructure. Top-gated Hall bar devices are fabricated to enable magnetoresistivity and Hall effect measurements. Both Shubnikov-de Haas oscillations and the quantum Hall effect are observed at low temperatures, demonstrating the formation of high-quality 2DEGs. Values of charge carrier mobility as a function of carrier density extracted from these measurements are at least as high or higher than those obtained from companion measurements made on heterostructures grown on conventional strain graded substrates. In all samples, impurity scattering appears to limit the mobility.

Probing Electronic Doping of Single-Walled Carbon Nanotubes by Gaseous Ammonia with Dielectric Force Microscopy.

The electronic properties of single-walled carbon nanotubes (SWNTs) are sensitive to the gas molecules adsorbed on nanotube sidewalls. It is imperative to investigate the interaction between SWNTs and gas molecules in order to understand the mechanism of SWNT-based gas-sensing devices or the stability of individual SWNT-based field effect transistors (FETs). To avoid the Schottky barrier at the metal/SWNT contact, which dominates the performance of SWNT-based FETs, we utilize a contactless technique, dielectric force microscopy (DFM), to study the intrinsic interaction between SWNTs and gaseous ammonia molecules. Results show that gaseous ammonia affects the conductivity of semiconducting SWNTs but not metallic SWNTs. Semiconducting SWNTs, which are p-type doped in air, show suppressed hole concentration in ammonia gas and are even inverted to n-type doping in some cases.