Contact Architecture Controls Conductance in Monolayer Devices.

The architecture of electrically contacting the self-assembled monolayer (SAM) of an organophosphonate has a profound effect on a device where the SAM serves as an intermolecular conductive channel in the plane of the substrate. Nanotransfer printing (nTP) enabled the construction of top-contact and bottom-contact architectures; contacts were composed of 13 nm thin metal films that were separated by a ca. 20 nm gap. Top-contact devices were fabricated by assembling the SAM across the entire surface of an insulating substrate and then applying the patterned metallic electrodes by nTP; bottom-contact ones were fabricated by nTP of the electrode pattern onto the substrate before the SAM was grown in the patterned nanogaps. SAMs were prepared from (9,10-di(naphthalen-2-yl)anthracen-2-yl)phosphonate; here, the naphthyl groups extend laterally from the anthracenylphosphonate backbone. Significantly, top-contact devices supported current that was about 3 orders of magnitude greater than that for comparable bottom-contact devices and that was at least 100,000 times greater than for a control device devoid of a SAM (at 0.5 V bias). These large differences in conductance between top- and bottom-contact architectures are discussed in consideration of differential contact-to-SAM geometries and, hence, resistances.

Anomalously Rapid Tunneling: Charge Transport across Self-Assembled Monolayers of Oligo(ethylene glycol).

This paper describes charge transport by tunneling across self-assembled monolayers (SAMs) of thiol-terminated derivatives of oligo(ethylene glycol) (HS(CH2CH2O)nCH3; HS(EG)nCH3); these SAMs are positioned between gold bottom electrodes and Ga2O3/EGaIn top electrodes. Comparison of the attenuation factor (ß of the simplified Simmons equation) across these SAMs with the corresponding value obtained with length-matched SAMs of oligophenyls (HS(Ph)nH) and n-alkanethiols (HS(CH2)nH) demonstrates that SAMs of oligo(ethylene glycol) have values of ß (ß(EG)n = 0.29 ± 0.02 natom-1 and ß = 0.24 ± 0.01 Å-1) indistinguishable from values for SAMs of oligophenyls (ß(Ph)n = 0.28 ± 0.03 Å-1), and significantly lower than those of SAMs of n-alkanethiolates (ß(CH2)n = 0.94 ± 0.02 natom-1 and 0.77 ± 0.03 Å-1). There are two possible origins for this low value of ß. The more probable involves hole tunneling by superexchange, which rationalizes the weak dependence of the rate of charge transport on the length of the molecules of HS(EG)nCH3 using interactions among the high-energy, occupied orbitals associated with the lone-pair electrons on oxygen. Based on this mechanism, SAMs of oligo(ethylene glycol)s are good conductors (by hole tunneling) but good insulators (by electron and/or hole drift conduction). This observation suggests SAMs derived from these or electronically similar molecules are a new class of electronic materials. A second but less probable mechanism for this unexpectedly low value of ß for SAMs of S(EG)nCH3 rests on the possibility of disorder in the SAM and a systematic discrepancy between different estimates of the thickness of these SAMs.

Disorder-derived, strong tunneling attenuation in bis-phosphonate monolayers.

Monolayers of alkyl bisphosphonic acids (bisPAs) of various carbon chain lengths (C4, C8, C10, C12) were grown on aluminum oxide (AlO(x)) surfaces from solution. The structural and electrical properties of these self-assembled monolayers (SAMs) were compared with those of alkyl monophosphonic acids (monoPAs). Through contact angle (CA) and Kelvin-probe (KP) measurements, ellipsometry, and infrared (IR) and x-ray photoelectron (XPS) spectroscopies, it was found that bisPAs form monolayers that are relatively disordered compared to their monoPA analogs. Current-voltage (J-V) measurements made with a hanging Hg drop top contact show tunneling to be the prevailing transport mechanism. However, while the monoPAs have an observed decay constant within the typical range for dense monolayers, ß(mono) = 0.85 ± 0.03 per carbon atom, a surprisingly high value, ß(bis) = 1.40 ± 0.05 per carbon atom, was measured for the bisPAs. We attribute this to a strong contribution of 'through-space' tunneling, which derives from conformational disorder in the monolayer due to strong interactions of the distal phosphonic acid groups; they likely form a hydrogen-bonding network that largely determines the molecular layer structure. Since bisPA SAMs attenuate tunnel currents more effectively than do the corresponding monoPA SAMs, they may find future application as gate dielectric modification in organic thin film devices.

Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions.

This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure Ag(TS)/S(CH2)n(p-C6H4X)//Ga2O3/EGaIn, where S(CH2)n(p-C6H4X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm(-2)) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga2O3 interface leads to a decrease in J(V) by ∼×13 for S(p-C6H4X) and by ∼×50 for SCH2(p-C6H4X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga2O3/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.

Molecular series-tunneling junctions.

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-ß1d1 - ß2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and ßi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor ß.

Fluorination, and tunneling across molecular junctions.

This paper describes the influence of the substitution of fluorine for hydrogen on the rate of charge transport by hole tunneling through junctions of the form Ag(TS)O2C(CH2)n(CF2)(m)T//Ga2O3/EGaIn, where T is methyl (CH3) or trifluoromethyl (CF3). Alkanoate-based self-assembled monolayers (SAMs) having perfluorinated groups (R(F)) show current densities that are lower (by factors of 20-30) than those of the homologous hydrocarbons (R(H)), while the attenuation factors of the simplified Simmons equation for methylene (ß = (1.05 ± 0.02)n(CH2)(-1)) and difluoromethylene (ß = (1.15 ± 0.02)n(CF2)(-1)) are similar (although the value for (CF2)n is statistically significantly larger). A comparative study focusing on the terminal fluorine substituents in SAMs of ω-tolyl- and -phenyl-alkanoates suggests that the C-F//Ga2O3 interface is responsible for the lower tunneling currents for CF3. The decrease in the rate of charge transport in SAMs with R(F) groups (relative to homologous R(H) groups) is plausibly due to an increase in the height of the tunneling barrier at the T//Ga2O3 interface, and/or to weak van der Waals interactions at that interface.

Characterizing the metal-SAM interface in tunneling junctions.

This paper investigates the influence of the interface between a gold or silver metal electrode and an n-alkyl SAM (supported on that electrode) on the rate of charge transport across junctions with structure Met(Au or Ag)(TS)/A(CH2)nH//Ga2O3/EGaIn by comparing measurements of current density, J(V), for Met/AR = Au/thiolate (Au/SR), Ag/thiolate (Ag/SR), Ag/carboxylate (Ag/O2CR), and Au/acetylene (Au/C≡CR), where R is an n-alkyl group. Values of J0 and ß (from the Simmons equation) were indistinguishable for these four interfaces. Since the anchoring groups, A, have large differences in their physical and electronic properties, the observation that they are indistinguishable in their influence on the injection current, J0 (V = 0.5) indicates that these four Met/A interfaces do not contribute to the shape of the tunneling barrier in a way that influences J(V).

Rectification in tunneling junctions: 2,2'-bipyridyl-terminated n-alkanethiolates.

Molecular rectification is a particularly attractive phenomenon to examine in studying structure-property relationships in charge transport across molecular junctions, since the tunneling currents across the same molecular junction are measured, with only a change in the sign of the bias, with the same electrodes, molecule(s), and contacts. This type of experiment minimizes the complexities arising from measurements of current densities at one polarity using replicate junctions. This paper describes a new organic molecular rectifier: a junction having the structure Ag(TS)/S(CH2)11-4-methyl-2,2'-bipyridyl//Ga2O3/EGaIn (Ag(TS): template-stripped silver substrate; EGaIn: eutectic gallium-indium alloy) which shows reproducible rectification with a mean r(+) = |J(+1.0 V)|/|J(-1.0 V)| = 85 ± 2. This system is important because rectification occurs at a polarity opposite to that of the analogous but much more extensively studied systems based on ferrocene. It establishes (again) that rectification is due to the SAM, and not to redox reactions involving the Ga2O3 film, and confirms that rectification is not related to the polarity in the junction. Comparisons among SAM-based junctions incorporating the Ga2O3/EGaIn top electrode and a variety of heterocyclic terminal groups indicate that the metal-free bipyridyl group, not other features of the junction, is responsible for the rectification. The paper also describes a structural and mechanistic hypothesis that suggests a partial rationalization of values of rectification available in the literature.

Odd-even effects in charge transport across n-alkanethiolate-based SAMs.

This paper compares rates of charge transport across self-assembled monolayers (SAMs) of n-alkanethiolates having odd and even numbers of carbon atoms (nodd and neven) using junctions with the structure M(TS)/SAM//Ga2O3/EGaIn (M = Au or Ag). Measurements of current density, J(V), across SAMs of n-alkanethiolates on Au(TS) and Ag(TS) demonstrated a statistically significant odd-even effect on Au(TS), but not on Ag(TS), that could be detected using this technique. Statistical analysis showed the values of tunneling current density across SAMs of n-alkanethiolates on Au(TS) with nodd and neven belonging to two separate sets, and while there is a significant difference between the values of injection current density, J0, for these two series (log|J0Au,even| = 4.0 ± 0.3 and log|J0Au,odd| = 4.5 ± 0.3), the values of tunneling decay constant, ß, for nodd and neven alkyl chains are indistinguishable (ßAu,even = 0.73 ± 0.02 Å(-1), and ßAu,odd= 0.74 ± 0.02 Å(-1)). A comparison of electrical characteristics across junctions of n-alkanethiolate SAMs on gold and silver electrodes yields indistinguishable values of ß and J0 and indicates that a change that substantially alters the tilt angle of the alkyl chain (and, therefore, the thickness of the SAM) has no influence on the injection current density across SAMs of n-alkanethiolates.

Introducing ionic and/or hydrogen bonds into the SAM//Ga2O3 top-interface of Ag(TS)/S(CH2)nT//Ga2O3/EGaIn junctions.

Junctions with the structure Ag(TS)/S(CH2)nT//Ga2O3/EGaIn (where S(CH2)nT is a self-assembled monolayer, SAM, of n-alkanethiolate bearing a terminal functional group T) make it possible to examine the response of rates of charge transport by tunneling to changes in the strength of the interaction between T and Ga2O3. Introducing a series of Lewis acidic/basic functional groups (T = -OH, -SH, -CO2H, -CONH2, and -PO3H) at the terminus of the SAM gave values for the tunneling current density, J(V) in A/cm(2), that were indistinguishable (i.e., differed by less than a factor of 3) from the values observed with n-alkanethiolates of equivalent length. The insensitivity of the rate of tunneling to changes in the terminal functional group implies that replacing weak van der Waals contact interactions with stronger hydrogen- or ionic bonds at the T//Ga2O3 interface does not change the shape (i.e., the height or width) of the tunneling barrier enough to affect rates of charge transport. A comparison of the injection current, J0, for T = -CO2H, and T = -CH2CH3--two groups having similar extended lengths (in Å, or in numbers of non-hydrogen atoms)--suggests that both groups make indistinguishable contributions to the height of the tunneling barrier.

Replacing Ag(TS)SCH(2)-R with Ag(TS)O(2)C-R in EGaIn-based tunneling junctions does not significantly change rates of charge transport.

This paper compares rates of charge transport by tunneling across junctions with the structures Ag(TS) X(CH2 )2n CH3 //Ga2 O3 /EGaIn (n=1-8 and X= SCH2  and O2 C); here Ag(TS) is template-stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (ß, Å(-1) ) and the injection current (J0 , A cm(-2) ) of the junctions comprising SAMs of n-alkanethiolates and n-alkanoates. Replacing Ag(TS) SCH2 -R with Ag(TS) O2 C-R (R=alkyl chains) had no significant influence on J0 (ca. 3×10(3)  A cm(-2) ) or ß (0.75-0.79 Å(-1) )-an indication that such changes (both structural and electronic) in the Ag(TS) XR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n-alkanoates showed, as expected, that ß for aliphatic (0.79 Å(-1) ) and aromatic (0.60 Å(-1) ) SAMs differed significantly.

Comparative interface metrics for metal-free monolayer-based dye-sensitized solar cells.

The first quantitative comparison between self-assembled monolayers of homologous carboxylate- and phosphonate-terminated organic dyes that are of use in dye-sensitized solar cells (DSSCs) is reported. (Cyanovinyl)phosphonate-terminated oligothiophenes and (cyanovinyl)carboxylate-terminated oligothiophenes were synthesized on TiO(2) thin film electrodes. Structurally analogous organics were compared for the effect of the anchoring groups on photochemical properties in solution as measured by UV/vis spectroscopy and for reactivity with the electrode surface. Monolayers were grown on the TiO(2) electrodes either by "tethering by aggregation and growth" (T-BAG) or by solution dipping. Surface roughness and homogeneity, elemental composition, and thickness of the monolayers were evaluated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and ellipsometry. Molecular loadings for each monolayer on TiO(2) were quantified by quartz crystal microgravimetry (QCM), and the stability of bonding between each class of dyes and the TiO(2) was evaluated by measuring desorption, also by QCM; the carboxylates underwent significant dissociation in aqueous media but the phosphonates did not. DSSCs were prepared from each congener and from simple oligothiophene phosphonates to determine the effect of the cyanovinyl group on device behavior; all DSSCs were studied under irradiation from a AM 1.5G solar light source; the effect of cyanovinyl group termination was comparable to that of adding a thiophene moiety, and the DSSC using a self-assembled monolayer of (sexithiophene)phosphonate (6TP) had total power conversion efficiency (η) of ca. 5%.

Molecular architecture: construction of self-assembled organophosphonate duplexes and their electrochemical characterization.

Self-assembled monolayers of phosphonates (SAMPs) of 11-hydroxyundecylphosphonic acid, 2,6-diphosphonoanthracene, 9,10-diphenyl-2,6-diphosphonoanthracene, and 10,10'-diphosphono-9,9'-bianthracene and a novel self-assembled organophosphonate duplex ensemble were synthesized on nanometer-thick SiO(2)-coated, highly doped silicon electrodes. The duplex ensemble was synthesized by first treating the SAMP prepared from an aromatic diphosphonic acid to form a titanium complex-terminated one; this was followed by addition of a second equivalent of the aromatic diphosphonic acid. SAMP homogeneity, roughness, and thickness were evaluated by AFM; SAMP film thickness and the structural contributions of each unit in the duplex were measured by X-ray reflection (XRR). The duplex was compared with the aliphatic and aromatic monolayer SAMPs to determine the effect of stacking on electrochemical properties; these were measured by impedance spectroscopy using aqueous electrolytes in the frequency range 20 Hz to 100 kHz, and data were analyzed using resistance-capacitance network based equivalent circuits. For the 11-hydroxyundecylphosphonate SAMP, C(SAMP) = 2.6 ± 0.2 µF/cm(2), consistent with its measured layer thickness (ca. 1.1 nm). For the anthracene-based SAMPs, C(SAMP) = 6-10 µF/cm(2), which is attributed primarily to a higher effective dielectric constant for the aromatic moieties (ε = 5-10) compared to the aliphatic one; impedance spectroscopy measured the additional capacitance of the second aromatic monolayer in the duplex (2ndSAMP) to be C(Ti/2ndSAMP) = 6.8 ± 0.7 µF/cm(2), in series with the first.

N-1- and N-2-anthryl succinimide derivatives: C-N bond rotational behaviors and fluorescence energy transfer.

New rigid bicyclic N-anthrylsuccinimide 1a, 1b, 2a, and 2b were prepared. The C(aryl)-N(imide) bond rotational barriers, intra/intermolecular arene-arene interactions, and photophysical properties were investigated. The rotational behaviors are more significantly controlled by the position of C(aryl)-N(imide) connection than the sidewall framework. The fluorescence energy transfer (Φ(ET)) in 1a and 1b was estimated to be 61% and 53%, respectively. The difference is attributed to the position of C(aryl)-N(imide) connection, which directly influences the relative orientation of donor (naphthalene) and acceptor (anthracene).

Bicyclo[2.2.2]octene-based "crab-like" molecules: synthesis, complexation, luminescence properties, and solid-state structures.

[structure, reaction: see text] The U-shaped, multifunctionalized tetraetheno-bridged dicyclopenta[b,i]anthracenediol 10 was synthesized to serve as a platform molecule. The molecule was prepared from the Diels-Alder adduct 5a of tricycloundecatriene 3 and bicyclo[2.2.2]octene-fused p-benzoquinone 4. Functionalization of 10 to construct crab-like molecules was achieved via the base-promoted bis-O-alkylation of two endo-oriented hydroxyl groups at termini in 10 with the following alkyl halides: allyl, propagyl, and benzyl bromides; 1-bromo- and 1-iodo-4-(bromomethyl)benzene; 9-(bromomethyl)anthracene; 1-(bromomethyl)pyrene; and isomeric bromomethylpyridines. Single-crystal X-ray structures were obtained for bis-phenyl (21) and bis-pyrenyl (25) crabs, and for the silver(I) complex (32 and 33) crabs. The silver(I) complex 32 from bis-o-pyridyl crab 30 is a [2+2] dimeric dimetallocyclophane, and 33 from bis-m-pyridyl crab 29 is a [1+1] metallo-bridged cyclophane. The self-assembled intramolecular pi-stacking of pyrenyl rings in 25 with an interplanar distance of 3.40 A and the consequent pi-pi interactions were revealed by the X-ray crystal structure and its luminescence property.

Synthesis and luminescence properties of U-shaped polycyclic molecules containing syn-facial functionalized quinoxaline rings.

[reaction: see text] Rigid U-shaped molecules containing syn-facially situated quinoxaline rings have been synthesized in three steps, by a combination of the Diels-Alder reaction, the ruthenium-catalyzed oxidation, and the Zn(OAc)(2)-catalyzed condensation of the resulting bis-alpha-diketones with benzene-1,2-diamines. The unsymmetric bis-quinoxalines, with electronically different substituents, and the quinoxaline ring-attached alpha-diketones were also prepared. Their luminescence properties were examined and described.