Millisecond flash lamp curing for porosity generation in thin films.

Flash lamp annealing (FLA) with millisecond pulse durations is reported as a novel curing method for pore precursor's degradation in thin films. A case study on the curing of dielectric thin films is presented. FLA-cured films are being investigated by means of positron annihilation spectroscopy (PAS) and Fourier-transform infrared (FTIR) spectroscopy in order to quantify the nm-scale porosity and post-treatment chemistry, respectively. Results from positron annihilation reveal the onset of the formation of porous voids inside the samples at 6 ms flash treatment time. Moreover, parameter's adjustment (flash duration and energy density) allows for identifying the optimum conditions of effective curing. Within such a systematic investigation, positron results indicate that FLA is able to decompose the porogen (pore precursors) and to generate interconnected (open porosity) or isolated pore networks with self-sealed pores in a controllable way. Furthermore, FTIR results demonstrate the structural evolution after FLA, that help for setting the optimal annealing conditions whereby only a residual amount of porogen remains and at the same time a well-densified matrix, and a hydrophobic porous structures are created. Raman spectroscopy suggests that the curing-induced self-sealing layer developed at the film surface is a graphene oxide-like layer, which could serve as the outside sealing of the pore network from intrusions.

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.

A set of GaN layers prepared by metalorganic vapor phase epitaxy under different technological conditions (growth temperature carrier gas type and Ga precursor) were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of gallium vacancies (VGa). Different correlations between technological parameters and VGa concentration were observed for layers grown from triethyl gallium (TEGa) and trimethyl gallium (TMGa) precursors. In case of TEGa, the formation of VGa was significantly influenced by the type of reactor atmosphere (N2 or H2), while no similar behaviour was observed for growth from TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. On the contrary, enhancement of VGa concentration was observed for growth from TMGa, with cluster formation for the highest temperature of 1100 °C. From the correlation of photoluminescence results with VGa concentration determined by VEPAS, it can be concluded that yellow band luminescence in GaN is likely not connected with VGa; additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested.

Ion Intercalation in Lanthanum Strontium Ferrite for Aqueous Electrochemical Energy Storage Devices.

Ion intercalation of perovskite oxides in liquid electrolytes is a very promising method for controlling their functional properties while storing charge, which opens up its potential application in different energy and information technologies. Although the role of defect chemistry in oxygen intercalation in a gaseous environment is well established, the mechanism of ion intercalation in liquid electrolytes at room temperature is poorly understood. In this study, the defect chemistry during ion intercalation of La0.5Sr0.5FeO3-δ thin films in alkaline electrolytes is studied. Oxygen and proton intercalation into the La1-xSrxFeO3-δ perovskite structure is observed at moderate electrochemical potentials (0.5 to -0.4 V), giving rise to a change in the oxidation state of Fe (as a charge compensation mechanism). The variation of the concentration of holes as a function of the intercalation potential is characterized by in situ ellipsometry, and the concentration of electron holes is indirectly quantified for different electrochemical potentials. Finally, a dilute defect chemistry model that describes the variation of defect species during ionic intercalation is developed.

Magneto-Ionics in Single-Layer Transition Metal Nitrides.

Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. Iron nitrides require increased activation energy and, under high bias, exhibit more modest rates of magneto-ionic motion than cobalt nitrides. Ab initio calculations reveal that, based on the atomic bonding strength, the critical field required to induce nitrogen-ion motion is higher in iron nitrides (≈6.6 V nm-1) than in cobalt nitrides (≈5.3 V nm-1). Nonetheless, under large bias (i.e., well above the magneto-ionic onset and, thus, when magneto-ionics is fully activated), iron nitride films exhibit enhanced coercivity and larger generated saturation magnetization, surpassing many of the features of cobalt nitrides. The microstructural effects responsible for these enhanced magneto-ionic effects are discussed. These results open up the potential integration of magneto-ionics in existing nitride semiconductor materials in view of advanced memory system architectures.

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation.

Alumina thin films are synthesized by combustion synthesis of mixtures of aluminium nitrate (ALN) and methylcarbazate (MCZ). The interdependence of the ratio of oxidizer and reducing agent on composition, microstructure and electronic properties of the resulting oxide layers is investigated. The dielectric and insulating behaviour is improved by addition of different amounts of MCZ (MCZ : ALN = 0.67 or 2.5). In this way films (thickness ∼140 nm) with a dielectric constant κ of 9.7 and a dielectric loss tan δ below 0.015 can be achieved. Medium concentrations of MCZ (MCZ : ALN = 1.0 or 1.5) lead to films with lower performance, though. Our studies indicate two opposing effects of the organic additive. Removal of organic residues during film formation as combustion gases is potentially detrimental. Larger amounts of MCZ, however, cause condensation reactions in the precusor mixture, which improve the microstructure. The porosity of the films can be sucessfully analyzed by positron annihilation liftetime studies. In this way the impact of the organic ligand sphere on the resulting microstructure can be quantified. Samples prepared from ALN alone exhibit mesopores and also larger micropores. In contrast, the formation of mesopores can be inhibited by addition of MCZ.

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc. Thin Film Transistor and Sensoric Behaviour of ZnO Films and Rods.

Invited for the cover of this issue is Jörg J. Schneider and co-workers at Technical University Darmstadt, Helmholtz-Zentrum Dresden-Rossendorf and KIT Karlsruhe. The image depicts the application of high energy generated electron/positron couples which are able to detect defects sites in semiconducting zinc oxide thin films. Read the full text of the article at 10.1002/chem.202004270.

Mapping the Structure of Oxygen-Doped Wurtzite Aluminum Nitride Coatings from Ab Initio Random Structure Search and Experiments.

Machine learning is changing how we design and interpret experiments in materials science. In this work, we show how unsupervised learning, combined with ab initio random structure searching, improves our understanding of structural metastability in multicomponent alloys. We focus on the case of Al-O-N alloys where the formation of aluminum vacancies in wurtzite AlN upon the incorporation of substitutional oxygen can be seen as a general mechanism of solids where crystal symmetry is reduced to stabilize defects. The ideal AlN wurtzite crystal structure occupation cannot be matched due to the presence of an aliovalent hetero-element into the structure. The traditional interpretation of the c-lattice shrinkage in sputter-deposited Al-O-N films from X-ray diffraction (XRD) experiments suggests the existence of a solubility limit at 8 at % oxygen content. Here, we show that such naive interpretation is misleading. We support XRD data with accurate ab initio modeling and dimensionality reduction on advanced structural descriptors to map structure-property relationships. No signs of a possible solubility limit are found. Instead, the presence of a wide range of non-equilibrium oxygen-rich defective structures emerging at increasing oxygen contents suggests that the formation of grain boundaries is the most plausible mechanism responsible for the lattice shrinkage measured in Al-O-N sputtered films. We further confirm our hypothesis using positron annihilation lifetime spectroscopy.

Zinc Oxide Defect Microstructure and Surface Chemistry Derived from Oxidation of Metallic Zinc: Thin-Film Transistor and Sensor Behavior of ZnO Films and Rods.

Zinc oxide thin films are fabricated by controlled oxidation of sputtered zinc metal films on a hotplate in air at temperatures between 250 and 450 °C. The nanocrystalline films possess high relative densities and show preferential growth in (100) orientation. Integration in thin-film transistors reveals moderate charge carrier mobilities as high as 0.2 cm2 V-1 s-1 . The semiconducting properties depend on the calcination temperature, whereby the best performance is achieved at 450 °C. The defect structure of the thin ZnO film can be tracked by Doppler-broadening positron annihilation spectroscopy as well as positron lifetime studies. Comparably long positron lifetimes suggest interaction of zinc vacancies (VZn ) with one or more oxygen vacancies (VO ) in larger structural entities. Such VO -VZn defect clusters act as shallow acceptors, and thus, reduce the overall electron conductivity of the film. The concentration of these defect clusters decreases at higher calcination temperatures as indicated by changes in the S and W parameters. Such zinc oxide films obtained by conversion of metallic zinc can also be used as seed layers for solution deposition of zinc oxide nanowires employing a mild microwave-assisted process. The functionality of the obtained nanowire arrays is tested in a UV sensor device. The best results with respect to sensor sensitivity are achieved with thinner seed layers for device construction.

Voltage-driven motion of nitrogen ions: a new paradigm for magneto-ionics.

Magneto-ionics, understood as voltage-driven ion transport in magnetic materials, has largely relied on controlled migration of oxygen ions. Here, we demonstrate room-temperature voltage-driven nitrogen transport (i.e., nitrogen magneto-ionics) by electrolyte-gating of a CoN film. Nitrogen magneto-ionics in CoN is compared to oxygen magneto-ionics in Co3O4. Both materials are nanocrystalline (face-centered cubic structure) and show reversible voltage-driven ON-OFF ferromagnetism. In contrast to oxygen, nitrogen transport occurs uniformly creating a plane-wave-like migration front, without assistance of diffusion channels. Remarkably, nitrogen magneto-ionics requires lower threshold voltages and exhibits enhanced rates and cyclability. This is due to the lower activation energy for ion diffusion and the lower electronegativity of nitrogen compared to oxygen. These results may open new avenues in applications such as brain-inspired computing or iontronics in general.

Voltage-Controlled ON-OFF Ferromagnetism at Room Temperature in a Single Metal Oxide Film.

Electric-field-controlled magnetism can boost energy efficiency in widespread applications. However, technologically, this effect is facing important challenges: mechanical failure in strain-mediated piezoelectric/magnetostrictive devices, dearth of room-temperature multiferroics, or stringent thickness limitations in electrically charged metallic films. Voltage-driven ionic motion (magneto-ionics) circumvents most of these drawbacks while exhibiting interesting magnetoelectric phenomena. Nevertheless, magneto-ionics typically requires heat treatments and multicomponent heterostructures. Here we report on the electrolyte-gated and defect-mediated O and Co transport in a Co3O4 single layer which allows for room-temperature voltage-controlled ON-OFF ferromagnetism (magnetic switch) via internal reduction/oxidation processes. Negative voltages partially reduce Co3O4 to Co (ferromagnetism: ON), resulting in graded films including Co- and O-rich areas. Positive bias oxidizes Co back to Co3O4 (paramagnetism: OFF). This electric-field-induced atomic-scale reconfiguration process is compositionally, structurally, and magnetically reversible and self-sustained, since no oxygen source other than the Co3O4 itself is required. This process could lead to electric-field-controlled device concepts for spintronics.