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1.
Interstitial-Carbon Hydrogen Interaction in Silicon.
Safonov AN; Lightowlers EC; Davies G; Leary P; Jones R; Öberg S.
Phys Rev Lett ; 77(23): 4812-4815, 1996 Dec 02.
Article in English | MEDLINE | ID: mdl-10062637
2.
Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Zeeman effect.
Karasyuk VA; Thewalt ML; An S; Lightowlers EC; Kaminskii AS.
Phys Rev B Condens Matter ; 54(15): 10543-10558, 1996 Oct 15.
Article in English | MEDLINE | ID: mdl-9984850
3.
Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum.
Newman RC; Tucker JH; Semaltianos NG; Lightowlers EC; Gregorkiewicz T; Zevenbergen IS; Ammerlaan CA.
Phys Rev B Condens Matter ; 54(10): R6803-R6806, 1996 Sep 01.
Article in English | MEDLINE | ID: mdl-9984384
4.
Line shape of the no-phonon luminescence of excitons bound to phosphorus in carbon-doped silicon.
Safonov AN; Davies G; Lightowlers EC.
Phys Rev B Condens Matter ; 54(7): 4409-4412, 1996 Aug 15.
Article in English | MEDLINE | ID: mdl-9986383
5.
Characterization of the 1117-meV and 1052-meV optical transitions in heat-treated Si.
Jeyanathan L; Davies G; Lightowlers EC.
Phys Rev B Condens Matter ; 52(15): 10923-10931, 1995 Oct 15.
Article in English | MEDLINE | ID: mdl-9980191
6.
Exciton self-trapping at an isoelectronic center in silicon.
Davies G; Zafar Iqbal M; Lightowlers EC.
Phys Rev B Condens Matter ; 50(16): 11520-11530, 1994 Oct 15.
Article in English | MEDLINE | ID: mdl-9975282
7.
Intrinsic splitting of the acceptor ground state in silicon.
Karasyuk VA; Thewalt ML; An S; Lightowlers EC.
Phys Rev Lett ; 73(17): 2340-2343, 1994 Oct 24.
Article in English | MEDLINE | ID: mdl-10057035
8.
Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress.
Karasyuk VA; Steele AG; Mainwood A; Lightowlers EC; Davies G; Brake DM; Thewalt ML.
Phys Rev B Condens Matter ; 45(20): 11736-11743, 1992 May 15.
Article in English | MEDLINE | ID: mdl-10001188
9.
Photoluminescence from bound multiexciton complexes in Si:P under high uniaxial stress.
Karasyuk VA; Lightowlers EC.
Phys Rev B Condens Matter ; 45(7): 3319-3322, 1992 Feb 15.
Article in English | MEDLINE | ID: mdl-10001902
10.
The 3942-cm-1 optical band in irradiated silicon.
Davies G; Lightowlers EC; Stavola M; Bergman K; Svensson B.
Phys Rev B Condens Matter ; 35(6): 2755-2766, 1987 Feb 15.
Article in English | MEDLINE | ID: mdl-9941753
11.
Thermal-donor-related isoelectronic center in silicon which can bind up to four excitons.
Thewalt ML; Steele AG; Watkins SP; Lightowlers EC.
Phys Rev Lett ; 57(15): 1939-1942, 1986 Oct 13.
Article in English | MEDLINE | ID: mdl-10033588
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