Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model.

Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.

Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.

Metal oxide-graphene field-effect transistor: interface trap density extraction model.

A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current-gate voltage relationship Ids-Vgs. At the moment, there is no analytical method available to extract the interface trap distribution of metal-oxide-graphene field effect transistor (MOGFET) devices. The model presented here extracts the interface trap distribution of MOGFET devices making use of available experimental capacitance-gate voltage Ctot-Vgs data and a basic set of equations used to define the device physics of MOGFET devices. The model was used to extract the interface trap distribution of 2 experimental devices. Device parameters calculated using the extracted interface trap distribution from the model, including surface potential, interface trap charge and interface trap capacitance compared very well with their respective experimental counterparts. The model enables accurate calculation of the surface potential affected by trap charge. Other models ignore the effect of trap charge and only calculate the ideal surface potential. Such ideal surface potential when used in a surface potential based drain current model will result in an inaccurate prediction of the drain current. Accurate calculation of surface potential that can later be used in drain current model is highlighted as a major advantage of the model.

Analytical modeling of glucose biosensors based on carbon nanotubes.

In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors.