Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb0.7Sn0.3Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb0.7Sn0.3Se to 0.075 eV for Pb0.7Sn0.3Se0.99Cl0.01, confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb0.7Sn0.3Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb0.7Sn0.3Se0.99Cl0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb0.7Sn0.3Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb0.7Sn0.3Se1- xCl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

Enhancement of Thermoelectric Performance in Na-Doped Pb0.6Sn0.4Te0.95- xSe xS0.05 via Breaking the Inversion Symmetry, Band Convergence, and Nanostructuring by Multiple Elements Doping.

Topological insulators have attracted much interest in topological states of matter featuring unusual electrical conduction behaviors. It has been recently reported that a topological crystalline insulator could exhibit a high thermoelectric performance by breaking its crystal symmetry via chemical doping. Here, we investigate the multiple effects of Na, Se, and S alloying on thermoelectric properties of a topological crystalline insulator Pb0.6Sn0.4Te. The Na doping is known to be effective for breaking the crystalline mirror symmetry of Pb0.6Sn0.4Te. We demonstrate that simultaneous emergence of band convergence by Se alloying and nanostructuring by S doping enhance the power factor and decrease lattice thermal conductivity, respectively. Remarkably, the high power factor of 22.3 µW cm-1 K-2 at 800 K is achieved for Na 1%-doped Pb0.6Sn0.4Te0.90Se0.05S0.05 mainly due to a relatively high Seebeck coefficient via band convergence by Se alloying as well as the suppression of bipolar conduction at high temperatures by the increase of energy band gap. Furthermore, the lattice thermal conductivity is significantly suppressed by PbS nanoprecipitates without deteriorating the hole carrier mobility, ranging from 0.80 W m-1 K-1 for Pb0.6Sn0.4Te to 0.17 W m-1 K-1 at 300 K for Pb0.6Sn0.4Te0.85Se0.10S0.05. As a result, the synergistically combined effects of breaking the crystalline mirror symmetry of topological crystalline insulator, band convergence, and nanostructuring for Pb0.6Sn0.4Te0.95- xSe xS0.05 ( x = 0, 0.05, 0.1, 0.2, and 0.95) give rise to an impressively high ZT of 1.59 at 800 K for x = 0.05. We suggest that the multiple doping in topological crystalline insulators is effective for improving the thermoelectric performance.

Dataset on the electronic and thermal transport properties of quaternary compounds of (PbTe)0.95-x(PbSe)x(PbS)0.05.

The data presented in this article are related to the research article entitled "High thermoelectric performance in pseudo quaternary compounds of (PbTe)0.95-x (PbSe)x(PbS)0.05 by simultaneous band convergence and nano precipitation" (Ginting et al., 2017) [1]. We measured electrical and thermal transport properties such as temperature-dependent Hall carrier density nH , Hall mobility µH , thermal diffusivity D, heat capacity Cp , and power factor S2σ in (PbTe)0.95-x (PbSe)x(PbS)0.05 (x=0.0, 0.05, 0.10, 0.15, 0.20, 0.35, and 0.95) compounds with other related compounds from references. From the theoretical fitting of thermal conductivity κ, we found that the temperature-dependent thermal conductivity follows nano-structure model as well as alloy scattering. Transmission electron microscopy images shows that there are numerous nano-scale precipitates in a matrix. Owing to the low thermal conductivity and high power factor, we report high thermoelectric performances such as the high ZT, engineering ZTeng , efficiency η.

Syntheses of 4-Indolylquinoline Derivatives via Reductive Cyclization of Indolylnitrochalcone Derivatives by Fe/HCl.

An easy and efficient procedure for the synthesis of 4-indolylquinoline derivatives is described. This process involves two steps, the first of which is the Michael addition of indole to nitrochalcones promoted by sulfamic acid under solvent free conditions and the second step is a reductive cyclization of the indolylnitrochalcone intermediates to 4-indolylquinoline derivatives by Fe/HCl in ethanol. In both steps, the reactions are clean and the yields of products are high.