Metal Nanoparticles Assisted Ultrafast Laser Plasmonic Microwelding of Oxide-Semiconductor Interconnects.

Integration of wafer-scale oxide and semiconductor materials meets the difficulties of residual stress and materials incompatibility. In this work, Ag NPs thin film is contributed as an energy confinement layer between oxide (Sapphire) and semiconductor (Si) wafers to localize the materials interaction during ultrafast laser irradiation. Due to the plasmonic effects generated within constructed dielectric-metal-dielectric structures (i.e., Sapphire-Ag-Si), thermal diffusion and chemical reaction between Ag and its neighboring materials facilitate the microwelding of Sapphire and Si wafers. Ag NPs can be totally sintered within the junction area to bridge oxide and semiconductor, while Al─O─Ag bond and Ag─Si bond are formed at Ag-Sapphire and Ag─Si interfaces, respectively. As-received heterogeneous joint exhibits a high shear strength up to 5.4 MPa, with the fracture occurring inside Si wafer. Meanwhile, insertion of metal nanolayer can greatly relieve the residual stress-induced microcracking inside the brittle materials. Such wafer-scale Sapphire and Si interconnects thus show robust strength and excellent impermeability even after thermal shocking (-40 °C to 120 °C) for 200 cycles. This metal NPs layer-assisted plasmonic microwelding technology can extend to broad materials integration, which is promising for high-performance microdevices development in MEMS, MOEMS, or microfluidics.

High performance 1D-2D CuO/MoS2 photodetectors enhanced by femtosecond laser-induced contact engineering.

The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS2 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS2 wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 1011 Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O2 and H2O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.

Aerosol-Assisted Deposition for TiO2 Immobilization on Photocatalytic Fibrous Filters for VOC Degradation.

Atomization and spraying are well-established methods for the production of submicrometer- and micrometer- sized powders. In addition, they could be of interest to the immobilization of photocatalytic nanoparticles onto supports because they enable the formation of microporous films with photocatalytic activity. Here, we provide a comparison of aerosol-assisted immobilization methods, such as spray-drying (SD), spray atomization (SA), and spray gun (SG), which were used for the deposition of TiO2 dispersions onto fibrous filter media. The morphology, microstructure, and electronic properties of the structures with deposited TiO2 were characterized by SEM and TEM, BET and USAXS, and UV-Vis spectrometry, respectively. The photocatalytic performances of the functionalized filters were evaluated and compared to the benchmark dip-coating method. Our results showed that the SG and SA immobilization methods led to the best photocatalytic and operational performance for the degradation of toluene, whereas the SD method showed the lowest degradation efficiency and poor stability of coating. We demonstrated that TiO2 sprays using the SG and SA methods with direct deposition onto filter media involving dispersed colloidal droplets revealed to be promising alternatives to the dip-coating method owing to the ability to uniformly cover the filter fibers. In addition, the SA method allowed for fast and simple control of the coating thickness as the dispersed particles were continuously directed onto the filter media without the need for repetitive coatings, which is common for the SG and dip-coating methods. Our study highlighted the importance of the proper immobilization method for the efficient photocatalytic degradation of VOCs.

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

Flexible and Ultrathin Waterproof Cellular Membranes Based on High-Conjunction Metal-Wrapped Polymer Nanofibers for Electromagnetic Interference Shielding.

Ultrathin, lightweight, and flexible electromagnetic interference (EMI) shielding materials are urgently demanded to address EM radiation pollution. Efficient design to utilize the shields' microstructures is crucial yet remains highly challenging for maximum EMI shielding effectiveness (SE) while minimizing material consumption. Herein, novel cellular membranes are designed based on a facile polydopamine-assisted metal (copper or silver) deposition on electrospun polymer nanofibers. The membranes can efficiently exploit the high-conjunction cellular structures of metal and polymer nanofibers, and their interactions for excellent electrical conductivity, mechanical flexibility, and ultrahigh EMI shielding performance. EMI SE reaches more than 53 dB in an ultra-broadband frequency range at a membrane thickness of merely 2.5 µm and a density of 1.6 g cm-3 , and an SE of 44.7 dB is accomplished at the lowest thickness of 1.2 µm. The normalized specific SE is up to 232 860 dB cm2 g-1 , significantly surpassing that of other shielding materials ever reported. More, integrated functionalities are discovered in the membrane, such as antibacterial, waterproof properties, excellent air permeability, high resistance to mechanical deformations and low-voltage uniform heating performance, offering strong potential for applications in aerospace and portable and wearable smart electronics.

Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation.

Single nanowire memory units are of particular interest in the design of high-density nanoelectronic circuits, but the performance due to weak contact state remains a major problem. In this paper, bonding between core/shell SiC/SiO2 nanowire and Au electrodes can be improved via local contact engineering with femtosecond (fs) laser irradiation. An optimized heterojunction (Au-SiO2-SiC) is possible since plasmonic enhanced optical absorption can be localized at the metal-oxide (Au-SiO2) interface. Electron transport across the barrier and charge accumulation at the oxide-semiconductor (SiO2-SiC) interface are improved in nanowire circuits. A fast and stable resistance change can be achieved after only one biasing cycle ('write') and the written state can be read/extracted at a low voltage (∼ 0.5 V). Unlike other as-built nanowire circuits, the resistance state can be retained for 10 min in the absence of external power, indicating that these devices can be used for short-term memory units. High current tolerance is also provided in the circuit by the surface oxide shell which acts to protect the inner SiC core. The current density carried by the single SiC/SiO2 nanowire circuit can be as high as ∼3 × 106 A cm-2 before break down, and that breakdown occurs as a two-stage process.

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing.

Precise nanoindentation on AlN/Cu/AlN nanolayer sandwiches has been conducted by using an atomic force microscope to promote fast and directional metal (Cu) outflow upon heating at low temperatures. Local plastic deformation during indentation results in the generation of high defect densities and stress gradients, which not only effectively reduce the activation energies for fast in-plane diffusion but also direct the in-plane transport of confined Cu to the indent location. In addition, a steep chemical potential gradient of O will be established across the AlN barrier upon exposure to air, which drives fast outward diffusion of Cu along defective pathways in the top AlN layer at the indent location. Selective and fast Cu metal outflow can thus be achieved at the indent locations upon annealing at a relatively low temperature of 350 °C for 5 min in air. The microstructures and phase boundaries of the AlN barrier and confined Cu nanolayers are unperturbed outside the plastically deformed region and remain metastable after annealing at 350 °C. By changing the surface processing modes, patterned nanoparticles and isolated nanowire structures can be fabricated straightforwardly. Such local deformation-controlled directional mass transport phenomena can be utilized to manipulate materials down to the atomic scale for designing functional nanoarchitectures for nanophotonic and nanoelectronic applications.

Cooperative Bilayer of Lattice-Disordered Nanoparticles as Room-Temperature Sinterable Nanoarchitecture for Device Integrations.

Decreasing the interconnecting temperature is essential for 3D and heterogeneous device integrations, which play indispensable roles in the coming era of "more than Moore". Although nanomaterials exhibit a decreased onset temperature for interconnecting, such an effect is always deeply impaired because of organic additives in practical integrations. Meanwhile, current organic-free integration strategies suffer from roughness and contaminants at the bonding interface. Herein, a novel bilayer nanoarchitecture simultaneously overcomes the drawbacks of organics and is highly tolerant to interfacial morphology, which exhibits universal applicability for device-level integrations at even room temperature, with the overall performance outperforming most counterparts reported. This nanoarchitecture features a loose nanoparticle layer with unprecedented deformability for interfacial gap-filling, and a compact one providing firm bonding with the component surface. The two distinct nanoparticle layers cooperatively enhance the interconnecting performance by 73-357%. Apart from the absence of organics, the internal abundant lattice disorders profoundly accelerate the interconnecting process, which is supported by experiments and molecular dynamics simulation. This nanoarchitecture is successfully demonstrated in diversified applications including paper-based light-emitting diodes, Cu-Cu micro-bonding, and SiC power modules. The strategy proposed here can open a new paradigm for device integrations and provide a fresh understanding on interconnecting mechanisms.

Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO2 Nanowires.

In this work, plasmon-induced heterointerface thinning for Schottky barrier modification of core/shell SiC/SiO2 nanowires is conducted by femtosecond (fs) laser irradiation. The incident energy of polarized fs laser (50 fs, 800 nm) is confined in the SiO2 shell of the nanowire due to strong plasmonic localization in the region of the electrode-nanowire junction. With intense nonlinear absorption in SiO2, the thickness of the SiO2 layer can be thinned in a controllable way. The tuning of the SiO2 barrier layer allows the promotion of electron transportation at the electrode-nanowire interface. The switching voltage of the rectifying junction made by the SiC/SiO2 nanowire can be significantly tuned from 15.7 to 1 V. When selectively thinning at source and drain electrodes and leaving the SiO2 barrier layer at the gate electrode intact, a metal/oxide/semiconductor (MOS) device is fabricated with low leakage current. This optically controlled interfacial engineering technology should be applicable for MOS components and other heterogeneous integration structures.

Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation.

In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO2) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO2-x layer is formed between the Pt electrode and the TiO2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm-2, the Pt/TiO2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

In situ nanojoining of Y- and T-shaped silver nanowires structures using femtosecond laser radiation.

We report the in situ joining of spatially separated silver nanowires without additional filler material by controlled irradiation with femtosecond laser pulses. Nanojoining under these conditions arises from highly localized heat generation in the vicinity of the gap between adjacent silver nanowires. Melting, followed by the flow of silver into the gap, is optimized by adjusting the direction of laser polarization relative to gap geometry. Our results show that melting of silver occurs on both nanowires in the vicinity of the gap between the two components. Successful formation of a joint is found to be a function of the angle between the long axis of the nanowires and the gap distance. Finite element simulations show that the strong localized electric field generated by optical excitation determines the location and the morphology of the resulting bond. Light coupling and the resulting emission properties of these Y-shaped nanowire structures have been simulated and are compared to similar structures where the gap remains open. It is suggested that joined Y-shaped couplers will have a higher switching ratio between emitted nanowire ends than those occurring in open-gap structures. Nanojoining induced by localized heating under strong field excitation may enable the production of robust branched metal nanowire structures for optical applications.