Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene.

We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the aspect ratio, which has previously been established for larger bubbles, breaks down when the bubble radius approaches 1 nm, resulting in much larger aspect ratios. Moreover, we observe that the bubble stability and aspect ratio depend on the substrate onto which the graphene is grown (bubbles are stable for Pt but not for Cu) and trapped element. We interpret these dependencies in terms of the atomic compressibility of the noble gas as well as of the adhesion energies between graphene, the substrate, and trapped atoms.

Electrochemical behavior and electrodeposition of gallium in 1,2-dimethoxyethane-based electrolytes.

The electrochemical behavior and electrodeposition of gallium was studied in a non-aqueous electrolyte comprising of gallium(iii) chloride and 1,2-dimethoxyethane (DME). Electrochemical quartz crystal microbalance (EQCM) and rotating ring disk electrode (RRDE) measurements indicate that reduction of gallium(iii) is a two-step process: first from gallium(iii) to gallium(i), and then from gallium(i) to gallium(0). The morphology and elemental composition of the electrodeposited layer were examined using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). Metallic gallium was deposited as spheres with diameters of several hundred nanometers that were stacked on top of each other. X-ray photoelectron spectroscopy (XPS) revealed that each gallium sphere was covered by a thin gallium oxide shell. Electrochemical experiments indicated that these oxide layers are electrically conductive, as gallium can be electrodeposited and partially stripped on or from the layer of spheres below. This was further evidenced by simultaneous electrodeposition of gallium and indium, using indium as a tracer. Electrodeposition of gallium from an O2-containing electrolyte resulted in spheres with smaller diameters. This was due to the formation thicker oxide shells, through which diffusion of gallium atoms that were electrodeposited on the surface, was slower. The concentration of gallium adatoms on top of the gallium spheres to form a new sphere therefore reaches the critical concentration for nucleating a new gallium sphere sooner, leading to smaller spheres.

Electrodeposition of neodymium and dysprosium from organic electrolytes.

A new class of organic electrolytes has been developed for the electrodeposition of rare-earth metals at room temperature. These electrolytes consist of a rare-earth bis(trifluoromethylsulfonyl)imide or chloride salt and a borohydride salt, dissolved in the ether solvents 1,2-dimethoxyethane or 2-methyltetrahydrofuran. In these electrolytes, a soluble lanthanide(iii) borohydride complex [Ln(BH4)4]- is formed, which allows for the electrodeposition of neodymium- or dysprosium-containing layers. The electrochemistry of these electrolytes was characterized by cyclic voltammetry. The deposits were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray fluorescence (EDX) and X-ray photoelectron spectroscopy (XPS), and the results suggest the presence of metallic neodymium and dysprosium.

Doping Graphene with Substitutional Mn.

We report the incorporation of substitutional Mn atoms in high-quality, epitaxial graphene on Cu(111), using ultralow-energy ion implantation. We characterize in detail the atomic structure of substitutional Mn in a single carbon vacancy and quantify its concentration. In particular, we are able to determine the position of substitutional Mn atoms with respect to the Moiré superstructure (i.e., local graphene-Cu stacking symmetry) and to the carbon sublattice; in the out-of-plane direction, substitutional Mn atoms are found to be slightly displaced toward the Cu surface, that is, effectively underneath the graphene layer. Regarding electronic properties, we show that graphene doped with substitutional Mn to a concentration of the order of 0.04%, with negligible structural disorder (other than the Mn substitution), retains the Dirac-like band structure of pristine graphene on Cu(111), making it an ideal system in which to study the interplay between local magnetic moments and Dirac electrons. Our work also establishes that ultralow-energy ion implantation is suited for substitutional magnetic doping of graphene. Given the flexibility, reproducibility, and scalability inherent to ion implantation, our work creates numerous opportunities for research on magnetic functionalization of graphene and other two-dimensional materials.

Titanium Nitride Nanodonuts Synthesized from Natural Ilmenite Ore as a Novel and Efficient Thermoplasmonic Material.

Nanostructures of titanium nitride (TiN) have recently been considered as a new class of plasmonic materials that have been utilized in many solar energy applications. This work presents the synthesis of a novel nanostructure of TiN that has a nanodonut shape from natural ilmenite ore using a low-cost and bulk method. The TiN nanodonuts exhibit strong and spectrally broad localized surface plasmon resonance absorption in the visible region centered at 560 nm, which is well suited for thermoplasmonic applications as a nanoscale heat source. The heat generation is investigated by water evaporation experiments under simulated solar light, demonstrating excellent solar light harvesting performance of the nanodonut structure.

High Optical Response of Niobium-Doped WSe2-Layered Crystals.

The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals.

Tuning the Emission Energy of Chemically Doped Graphene Quantum Dots.

Tuning the emission energy of graphene quantum dots (GQDs) and understanding the reason of tunability is essential for the GOD function in optoelectronic devices. Besides material-based challenges, the way to realize chemical doping and band gap tuning also pose a serious challenge. In this study, we tuned the emission energy of GQDs by substitutional doping using chlorine, nitrogen, boron, sodium, and potassium dopants in solution form. Photoluminescence data obtained from (Cl- and N-doped) GQDs and (B-, Na-, and K-doped) GQDs, respectively exhibited red- and blue-shift with respect to the photoluminescence of the undoped GQDs. X-ray photoemission spectroscopy (XPS) revealed that oxygen functional groups were attached to GQDs. We qualitatively correlate red-shift of the photoluminescence with the oxygen functional groups using literature references which demonstrates that more oxygen containing groups leads to the formation of more defect states and is the reason of observed red-shift of luminescence in GQDs. Further on, time resolved photoluminescence measurements of Cl- and N-GQDs demonstrated that Cl substitution in GQDs has effective role in radiative transition whereas in N-GQDs leads to photoluminescence (PL) quenching with non-radiative transition to ground state. Presumably oxidation or reduction processes cause a change of effective size and the bandgap.