ABSTRACT
CuPbSbS3 (bournonite) has emerged as a promising light-absorbing material for thin-film solar cells due to its attractive photophysical properties. The crystallinity of CuPbSbS3 films is a main challenge of achieving high power conversion efficiency. Herein, we perform a series of optimization strategies to enhance the crystallinity of CuPbSbS3 films, including adjusting the annealing temperature and reducing the carbon residue. The optimized CuPbSbS3 film acquires an enhanced crystallinity, and an optimal solar cell device based on it achieves a power conversion efficiency of 2.65% with good stability. This efficiency is the highest value for CuPbSbS3 solar cells up to now.
ABSTRACT
Direct X-ray detectors are considered as competitive next-generation X-ray detectors because of their high spatial resolution, high sensitivity, and simple device configuration. However, their potential is largely limited by the imperfections of traditional materials, such as the low crystallization temperature of α-Se and the low atomic numbers of α-Si and α-Se. Here, we report the Sb2Se3 X-ray thin-film detector with a p-n junction structure, which exhibited a sensitivity of 106.3 µC/(Gyair·cm2) and response time of < 2.5 ms. This decent performance and the various advantages of Sb2Se3, such as the average atomic number of 40.8 and µτ product (µ is the mobility, and τ is the carrier lifetime) of 1.29 × 10-5 cm2/V, indicate its potential for application in X-ray detection.
ABSTRACT
Cadmium selenide (CdSe) belongs to the binary II-VI group semiconductor with a direct bandgap of â¼1.7 eV. The suitable bandgap, high stability, and low manufacturing cost make CdSe an extraordinary candidate as the top cell material in silicon-based tandem solar cells. However, only a few studies have focused on CdSe thin-film solar cells in the past decades. With the advantages of a high deposition rate (â¼2 °m/min) and high uniformity, rapid thermal evaporation (RTE) was used to maximize the use efficiency of CdSe source material. A stable and pure hexagonal phase CdSe thin film with a large grain size was achieved. The CdSe film demonstrated a 1.72 eV bandgap, narrow photoluminescence peak, and fast photoresponse. With the optimal device structure and film thickness, we finally achieved a preliminary efficiency of 1.88% for CdSe thin-film solar cells, suggesting the applicability of CdSe thin-film solar cells.
