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1.

Persson C; Lindefelt U.

Phys Rev B Condens Matter ; 54(15): 10257-10260, 1996 Oct 15.

Article in English | MEDLINE | ID: mdl-9984797

2.

Determination of the electron effective-mass tensor in 4H SiC.

Volm D; Meyer BK; Hofmann DM; Chen WM; Son NT; Persson C; Lindefelt U; Kordina O; Sörman E; Konstantinov AO; Monemar B; Janzén E.

Phys Rev B Condens Matter ; 53(23): 15409-15412, 1996 Jun 15.

Article in English | MEDLINE | ID: mdl-9983358

3.

Ga-bound excitons in 3C-, 4H-, and 6H-SiC.

Henry A; Hallin C; Ivanov IG; Bergman JP; Kordina O; Lindefelt U; Janzén E.

Phys Rev B Condens Matter ; 53(20): 13503-13506, 1996 May 15.

Article in English | MEDLINE | ID: mdl-9983094

4.

Electronic structure of 6H-SiC(0001).

Johansson LI; Owman F; Mårtensson P; Persson C; Lindefelt U.

Phys Rev B Condens Matter ; 53(20): 13803-13807, 1996 May 15.

Article in English | MEDLINE | ID: mdl-9983134

5.

Electronic structure of neutral and charged vacancies in GaAs.

Xu H; Lindefelt U.

Phys Rev B Condens Matter ; 41(9): 5979-5990, 1990 Mar 15.

Article in English | MEDLINE | ID: mdl-9994482

6.

Lindefelt U; Wang Yong-Liang.

Phys Rev B Condens Matter ; 38(6): 4107-4112, 1988 Aug 15.

Article in English | MEDLINE | ID: mdl-9946784

7.

Wang Yong-Liang; Lindefelt U.

Phys Rev B Condens Matter ; 37(3): 1320-1327, 1988 Jan 15.

Article in English | MEDLINE | ID: mdl-9944642

8.

Monemar B; Holtz PO; Chen WM; Gislason HP; Lindefelt U; Pistol ME.

Phys Rev B Condens Matter ; 34(12): 8656-8666, 1986 Dec 15.

Article in English | MEDLINE | ID: mdl-9939584