Bias polarity dependent low-frequency noise in ultra-thin AlOx-based magnetic tunnel junctions.

We exploit bias polarity dependent low-frequency noise (LFN) spectroscopy to investigate charge transport dynamics in ultra-thin AlOx-based magnetic tunnel junctions (MTJs) with bipolar resistive switching (RS). By measuring the noise characteristics across the entire bias voltage range of bipolar RS, we find that the voltage noise level exhibits an bias polarity dependence. This distinct feature is intimately correlated with reconfiguring of the inherently existing oxygen vacancies ( V O . . ) in as-grown MTJ devices during the SET and RESET switching processes. In addition, we observe two-level random telegraph noise (RTN) with a longer and shorter tunneling length in the high resistance state (HRS) and low resistance state (LRS) at a low bias voltage. The intrinsic voltage fluctuations of RTN arise from the dynamics of electron trapping/de-trapping processes at the V O . . -related trap sites. Notably, the RTN magnitude is similar in LRS but nonidentical in that of HRS for different bias polarity. These findings strongly suggest that the inherent V O . . are distributed near the top CoFe/AlOx interface in the HRS; in contrast, they are expanded to the middle region of the AlOx in the LRS. More importantly, we demonstrate that the location and distribution of the inherent V O . . can be electrically tuned, which plays an essential role in the charge transport dynamics in the ultra-thin AlOx-based MTJs and have significant implications for developing emergent memory and logic devices.

Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions.

We report spin-dependent transport properties and I-V hysteresis characteristics in an [Formula: see text]-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the [Formula: see text] layer. The role played by oxygen vacancies in [Formula: see text] is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single [Formula: see text]-based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.

Mode Dependency of Quantum Decoherence Studied via an Aharonov-Bohm Interferometer.

We investigate the dependence of decoherence on the mode number M in a multiple-mode Aharonov-Bohm (AB) interferometer. The design of the AB interferometer allows us to precisely determine M by the additivity rule of ballistic conductors; meanwhile, the decoherence rate is simultaneously deduced by the variance of the AB oscillation amplitude. The AB amplitude decreases and fluctuates with depopulating M. Moreover, the normalized amplitude exhibits a maximum at a specific M (∼9). Data analysis reveals that the charge-fluctuation-induced dephasing, which depends on the geometry and the charge relaxation resistance of the system, could play an essential role in the decoherence process. Our results suggest that the phase coherence, in principle, can be optimized using a deliberated design and pave one of the ways toward the engineering of quantum coherence.

Electronic structure, electron field emission and magnetic behaviors of carbon nanotubes fabricated on La0.66Sr0.33MnO3 (LSMO) for spintronics application.

This work elucidates the electronic structure, electron field emission and magnetic anisotropic behaviors of single wall carbon nanotubes (SWCNTs) for the spin-electronics device application grown on the La0.66Sr0.33MnO3 (LSMO)/SrTiO3 (STO) substrate. Micro-Raman spectroscopy, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES) were used for the study of electronics structure. The field emission characteristics were studied from the electron field emission current density (J) versus applied electric field (E(A)) from which the turn-on electric field (E(TOE)) was evaluated. The magnetization behaviors are also presented by the M-H hysteresis loop and were obtained by applying the magnetic field in the parallel and perpendicular direction of the CNTs at 305 K and 5 K temperatures. A magnetic measurement shows that the coercivity of the CNTs/LSMO/STO is higher and has hig anisotropic-nature than the composite LSMO/STO that could be the good material for the future possible spin-electronics device applications.

The modulated structure and ferromagnetic insulating state in a nine-layer BaRuO(3).

We report the observation of a modulated structure and a ferromagnetic insulating state in a high quality single crystal of a nine-layer BaRuO(3). Using x-ray scattering, the modulated satellites were observed to double the unit cell along the c-axis at low temperature. The ferromagnetic insulating state is confirmed by magnetic and resistivity measurements. Analyzing the peak profiles from the modulation and host structure respectively, showed a lattice distortion at T∼55 K. These findings elucidate the intimate relationship between ferromagnetism and lattice distortion in a nine-layer BaRuO(3).

High-temperature annealing effects on multiwalled carbon nanotubes: electronic structure, field emission and magnetic behaviors.

This work elucidates the effects of high-temperature annealing on the microscopic and electronic structure of multiwalled carbon nanotubes (MWCNTs) using high-resolution transmission electron microscopy, micro-Raman spectroscopy, X-ray diffraction, X-ray absorption near-edge structure (XANES) and valence-band photoemission spectroscopy (VBPES), respectively. The field emission and magnetization behaviors are also presented. The results of annealing are as follows: (1) MWCNTs tend to align in the form of small fringes along their length, promote graphitization and be stable in air, (2) XANES indicates an enhancement in oxygen content on the sample, implying that it can be adopted for sensing and storing oxygen gas, (3) the electron field emission current density (J) is enhanced and the turn-on electric field (E(TOE)) reduced, suggesting potential use in field emission displays and as electron sources in microwave tube amplifiers and (4) as-grown MWCNTs with embedded iron nanoparticles exhibits significantly higher coercivity approximately 750 Oe than its bulk counterpart (Fe(bulk) approximately 0.9 Oe), suggesting its potential use as low-dimensional high-density magnetic recording media.