Thickness dependence of microstructure in semiconducting films of an oligofluorene derivative.

The measurement and optimization of microstructure development in organic semiconductor films is valuable because microstructure in many cases critically impacts electronic performance. We demonstrate a general method to measure microstructure thickness dependence in thin films using surface-sensitive near edge X-ray absorbance fine structure (NEXAFS) spectroscopy. The method is applied to an oligofluorene derivative DDFTTF, which consists of a fluorene-bithiophene-fluorene core that is end-substituted with linear dodecyl groups. The substrate-relative orientations of the aromatic core and the aliphatic end chains are independently determined, and comparing these orientations to terrace heights from atomic force micrographs proves that the end chains are interdigitated or folded. By measuring microstructure development from 6 to 150 nm, we find that DDFTTF exhibits two different preferential microstructures: one with large terraces within which molecules exhibit a strongly vertical orientation, and one with much smaller domains within which molecules exhibit a mildly horizontal orientation. The relative distribution of these two preferential microstructures depends on the distance of the domains from the substrate and the substrate temperature during deposition. The utility of this method is tested using a lamination technique to measure the saturation hole mobility at the top and bottom interface of DDFTTF films. We find that local microstructures with greater pi orbital alignment in the source-drain plane correlate directly to better local saturation hole mobilities.

Hexathiapentacene: structure, molecular packing, and thin-film transistors.

In this communication we report the electrical characteristics of hexathiapentacene (HTP) and emphasize the unusual chemical structure and molecular packing. We report field-effect mobilities as high as 0.04 cm2 V-1 s-1 and current on/off ratios of >105. With crystallographic evidence of unusually long S-S bonds compared to normal S-S bonds, we have suggested a unique resonance structure similar to trithiapentalene, which well explains the bonding characteristics of HTP. This work appears to be the first to determine its molecular structure/packing mode and to study its application in organic transistors.

Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors.

This communication demonstrates a method of transferring unreacted low molecular weight (LMW) siloxane oligomers from freshly prepared "dry" PDMS stamps for patterning organic semiconductors and conducting polymers into functional devices via selective wetting. The semiconductors were patterned onto the modified surfaces via dip-coating with well-resolved feature sizes as small as 1 mum. Functional transistor arrays exhibited field-effect mobilities as high as 0.07 cm2/Vs. The proposed printing method eliminates the need to ink SAMs for fabricating patterns and results in a simple, fast, and highly reproducible method of patterning organic semiconductors from solution. The method herein also produced a flexible transistor composed of patterned PEDOT source-drain electrodes.

Conducting AFM and 2D GIXD studies on pentacene thin films.

Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (mu = 3.4 +/- 0.5 cm2/Vs) than those with polycrystalline dendritic islands (mu = 0.5 +/- 0.15 cm2/Vs) on OTS-treated ones.