Framework to optimize fixed-length micro-CT systems for propagation-based phase-contrast imaging.

A laboratory X-ray imaging system with a setup that closely resembles commercial micro-CT systems with a fixed source-to-detector distance of ∼90 cm is investigated for single distance propagation-based phase-contrast imaging and computed tomography (CT). The system had a constant source-to-detector distance, and the sample positions were optimized. Initially, a PTFE wire was imaged, both in 2D and 3D, to characterize fringe contrast and spatial resolution for different X-ray source settings and source-to-sample distances. The results were compared to calculated values based on theoretical models and to simulated (wave-optics based) results, with good agreement being found. The optimization of the imaging system is discussed. CT scans of two biological samples, a tissue-engineered esophageal scaffold and a rat heart, were then acquired at the optimum parameters, demonstrating that significant image quality improvements can be obtained with widely available components placed inside fixed-length cabinets through proper optimization of propagation-based phase-contrast.

A laboratory-based beam tracking x-ray imaging method achieving two-dimensional phase sensitivity and isotropic resolution with unidirectional undersampling.

Beam tracking X-ray Phase Contrast Imaging is a "Shack-Hartmann" type approach which uses a pre-sample mask to split the x-rays into "beamlets" which are interrogated by a detector with sufficient resolution. The ultimate spatial resolution is determined by the size of the mask apertures, however achieving this resolution level requires "stepping" the sample or the mask in increments equal to the aperture size ("dithering"). If an array of circular apertures is used (which also provides two-dimensional phase sensitivity) instead of long parallel slits, this stepping needs to be carried out in two directions, which lengthens scan times significantly. We present a mask design obtained by offsetting rows of circular apertures, allowing for two-dimensional sensitivity and isotropic resolution while requiring sample or mask stepping in one direction only. We present images of custom-built phantoms and biological specimens, demonstrating that quantitative phase retrieval and near aperture-limited spatial resolutions are obtained in two orthogonal directions.

Cycloidal-spiral sampling for three-modal x-ray CT flyscans with two-dimensional phase sensitivity.

We present a flyscan compatible acquisition scheme for three-modal X-Ray Computed Tomography (CT) with two-dimensional phase sensitivity. Our approach is demonstrated using a "beam tracking" setup, through which a sample's attenuation, phase (refraction) and scattering properties can be measured from a single frame, providing three complementary contrast channels. Up to now, such setups required the sample to be stepped at each rotation angle to sample signals at an adequate rate, to prevent resolution losses, anisotropic resolution, and under-sampling artefacts. However, the need for stepping necessitated a step-and-shoot implementation, which is affected by motors' overheads and increases the total scan time. By contrast, our proposed scheme, by which continuous horizontal and vertical translations of the sample are integrated with its rotation (leading to a "cycloidal-spiral" trajectory), is fully compatible with continuous scanning (flyscans). This leads to greatly reduced scan times while largely preserving image quality and isotropic resolution.

Electron-hole pair creation and conversion efficiency in radioisotope microbatteries.

The ultimate conversion efficiency of semiconductor radioisotope microbatteries is set by the average energy consumed in the creation of an electron-hole pair, ω. Although the Klein relationship between ω and semiconductor bandgap, Eg, is widely cited, not only for radioisotope microbatteries, but indeed for a multitude of fields requiring accurate values of ω, its validity has been recently questioned; new experimental measurements have resulted in the refined Bertuccio-Maiocchi-Barnett (BMB) relationship. Here, it is shown that the new relationship indicates the ultimately achievable conversion efficiencies of radioisotope microbatteries are much greater than had ever been expected. For example, it appears possible to produce planar 63Ni-Diamond radioisotope microbatteries with output powers 130× greater than has currently been achieved. The ultimate limit for batteries employing pore channels rather than planar designs is likely to be even greater still. These new findings open the possibility of using radioisotope microbatteries in a far greater variety of applications than has been traditionally assumed. As well as being of direct applicability to radioisotope microbatteries, the results highlight the need to reconsider the use of the Klein relationship in all fields that currently employ it.

Electron spectroscopy with a diamond detector.

An electronic grade single crystal chemical vapour deposition diamond was investigated as a prototype high temperature spectroscopic electron (ß- particle) detector for future space science instruments. The diamond detector was coupled to a custom-built charge-sensitive preamplifier of low noise. A 63Ni radioisotope source (endpoint energy 66 keV) was used to provide a spectrum of ß- particles incident on the detector. The operating temperature of the detector/preamplifier assembly was controlled to allow its performance to be investigated between +100 °C and -20 °C, in 20 °C steps. Monte Carlo modelling was used to: a) calculate the ß- particle spectrum incident on the detector; b) calculate the fraction of ß- particle energy deposited into the detector; and c) predict the ß- particle spectrum accumulated by the instrument. Comparison between the model and experimental data suggested that there was a 4.5 µm thick recombination region at the front of the detector. The spectrometer was demonstrated to be fully operable at temperatures, T, -20 °C ≤ T ≤ 80 °C; the results suggested that some form of polarisation phenomenon occurred in the detector at > 80 °C. This article presents the first report of an energy calibrated (≲ 50 keV) spectroscopic ß- particle diamond detector.

High temperature AlInP X-ray spectrometers.

Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range 0 °C to 100 °C. Each photodiode was then investigated as a high-temperature-tolerant photon counting X-ray detector by connecting it to a custom-made low-noise charge-sensitive preamplifier and illuminating it with an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kß = 6.49 keV). At 100 °C, the best energy resolutions (full width at half maximum at 5.9 keV) achieved using the 217 µm ± 15 µm diameter photodiode and the 409 µm ± 28 µm diameter photodiode were 1.31 keV ± 0.04 keV and 1.64 keV ± 0.08 keV, respectively. Noise analysis of the system is presented. The dielectric dissipation factor of Al0.52In0.48P was estimated as a function of temperature, up to 100 °C. The results show the performance of the thickest Al0.52In0.48P X-ray detectors so far reported at high temperature. The work has relevance for the development of novel space science instrumentation for use in hot space environments and extreme terrestrial applications.

InGaP electron spectrometer for high temperature environments.

In this work, a 200 µm diameter InGaP (GaInP) p+-i-n+ mesa photodiode was studied across the temperature range 100 °C to 20 °C for the development of a temperature-tolerant electron spectrometer. The depletion layer thickness of the InGaP device was 5 µm. The performance of the InGaP detector was analysed under dark conditions and then under the illumination of a 183 MBq 63Ni radioisotope beta particle source. The InGaP photodiode was connected to a custom-made low-noise charge-sensitive preamplifier to realise a particle counting electron spectrometer. Beta spectra were collected at temperatures up to 100 °C with the InGaP device reverse biased at 5 V. The spectrum accumulated at 20 °C was compared with the spectrum predicted using Monte Carlo simulations; good agreement was found between the predicted and experimental spectra. The work is of importance for the development of electron spectrometers that can be used for planetary and space science missions to environments of high temperature or extreme radiation (e.g. Mercury, Jupiter's moon Europa, near-Sun comets), as well as terrestrial applications.

InGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy.

In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensitive preamplifier. The characterisation of two randomly selected 200 µm diameter and two randomly selected 400 µm diameter In0.5Ga0.5P p+-i-n+ mesa photodiodes is reported; the i-layer of the p+-i-n+ structure was 5 µm thick. At room temperature, and under illumination from an 55Fe radioisotope X-ray source, X-ray spectra were accumulated; the best spectrometer energy resolution (FWHM) achieved at 5.9 keV was 900 eV for the 200 µm In0.5Ga0.5P diameter devices at reverse biases above 5 V. System noise analysis was also carried out and the different noise contributions were computed.

Temperature effects on gallium arsenide 63Ni betavoltaic cell.

A GaAs 63Ni radioisotope betavoltaic cell is reported over the temperature range 70°C to -20°C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8pW (corresponding to 0.3µW/Ci) and 7% were observed at -20°C, respectively.

AlGaAs 55Fe X-ray radioisotope microbattery.

This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range -20 °C to 50 °C. Two 400 µm diameter p+-i-n+ (3 µm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At -20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at -20 °C.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes.

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 µm and 400 µm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At -5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm(-2) and (189.0 ± 0.2) mA cm(-2), respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.

Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range 20 °C - 120 °C are presented. The results show consistent performance among devices. Their leakage current density, at the highest investigated temperature (120 °C), is in the range of nA/cm(2) at high internal electric field. Properties such as barrier height and ideality factor are also computed as a function of temperature. The responsivities of the diodes as functions of applied voltage were measured using a UV spectrophotometer in the wavelength range 200 nm - 380 nm and compared with theoretically calculated values. The devices had a mean peak responsivity of 0.093 A/W at 270 nm and -15 V reverse bias.