A compact tri-notched flexible UWB antenna based on an inkjet-printable and plasma-activated silver nano ink.

The rapid development of ultrawideband (UWB) communication systems has resulted in increasing performance requirements for the antenna system. In addition to a wide bandwidth, fast propagation rates and compact dimensions, flexibility, wearability or portability are also desirable for UWB antennas, as are excellent notch characteristics. Although progress has been made in the development of flexible/wearable antennas desired notch properties are still rather limited. Moreover, most presently available flexible UWB antennas are fabricated using environmentally not attractive subtractive etching-based processes. The usage of facile additive sustainably inkjet printing processes also utilizing low temperature plasma-activated conductive inks is rarely reported. In addition, the currently used tri-notched flexible UWB antenna designs have a relatively large footprint, which poses difficulties when integrated into miniaturized and compact communication devices. In this work, a silver nano ink is used to fabricate the antenna via inkjet printing and an efficient plasma sintering procedure. For the targeted UWB applications miniaturized tri-notched flexible antenna is realized on a flexible polyethylene terephthalate (PET) substrate with a compact size of 17.6 mm × 16 mm × 0.12 mm. The antenna operates in the UWB frequency band (2.9-10.61 GHz), and can shield interferences from WiMAX (3.3-3.6 GHz), WLAN (5.150-5.825 GHz) and X-uplink (7.9-8.4 GHz) bands, as well as exhibits a certain of bendability. Three nested "C" slots of different sizes were adopted to achieve notch features. The simulation and test results demonstrate that the proposed antenna can generate signal radiation in the desired UWB frequency band while retaining the desired notch properties and having acceptable SAR values on-body, making it a viable candidate for usage in flexible or wearable communication transmission devices. The research provides a facile and highly efficient method for fabricating flexible/wearable UWB antennas, that is, the effective combination of inkjet printing processing, flexible substrates, low temperature-activated conductive ink and antenna structure design.

Insight into the Types of Alkanolamines on the Properties of Copper(II) Formate-Based Conductive Ink.

Conductive inks are one of the most important functional materials for printed flexible electronic devices, and their properties determine the methods of subsequent patterning and metallization. In comparison with copper nanoparticle or nanowire inks, copper particle-free inks employing copper(II) formate (Cuf) as a precursor have attracted the interest of researchers due to their flexibility in preparation, excellent stability, and lower conversion temperature. Alkanolamines can provide Cuf with excellent solubility in alcohols while being less toxic and having a certain reducibility, making them preferable ligands in comparison with aliphatic amines and pyridine. However, there have been few studies on the effects of the alkanolamine types on the performance of Cuf inks. Also, the decomposition mechanism of copper-alkanolamine complex inks is not clear. In this work, different kinds of alkanolamines were chosen as ligands to formulate Cuf inks to address the mentioned issues. The influences of amine types on the stability, wettability, thermal decomposition behavior, and electrical performance of the formulated Cuf particle-free inks were investigated in detail. The results show that the utilization of alkanolamines could provide Cuf with excellent solubility in alcohols, resulting in an ink with good stability and favorable wetting properties. The thermal decomposition temperature and electrical performance of the formulated copper ink are largely dependent on the amine used. When amines with a longer carbon chain and more branches were utilized to prepare the ink, a decreased decomposition temperature was observed on the derived inks because of the steric hindrance effect. Copper films with good morphology and conductivity could be obtained at low temperatures by selecting the appropriate alkanolamine. Copper particle-free conductive ink from 2-amino-2-methyl-1-propanol demonstrated better morphology and electrical performance (16.09 µΩ·cm) and was successfully used for conductive circuits by direct-writing.

Bicolour, large area, inkjet-printed metal halide perovskite light emitting diodes.

We demonstrate a bicoloured metal halide perovskite (MHP) light emitting diode (LED) fabricated in two sequential inkjet printing steps. By adjusting the printing parameters, we selectively and deliberately redissolve and recrystallize the first printed emissive layer to add a pattern emitting in a different color. The red light emitting features (on a green light emitting background) have a minimum size of 100 µm and originate from iodide-rich domains in a phase-segregated, mixed MHP. This phase forms between the first layer, a bromide-based MHP, which is partially dissolved by printing, and the second layer, an iodide-containing MHP. With an optimised printing process we can retain the active layer integrity and fabricate bicolour, large area MHP-based LEDs with up to 1600 mm2 active area. The two emission peaks at 535 nm and 710 nm are well separated and produce a strong visual contrast.

Doubly Bridged Anthracenes: Blue Emitters for OLEDs.

The photooxidative stability of a series of doubly bridged anthracenes was evaluated after their preparation via twofold macrocyclization of a bis(resorcinyl)anthracene. Lightfastness correlates with the energy levels of the highest occupied molecular orbital (HOMO), resulting in superior stability of the tetraesters compared to the tetraethers. The lengths and steric demand of the linker only plays a minor role for the ester-based compounds, which can be prepared in reasonable yields and thus tested in proof-of-concept organic light-emitting diodes. Double ester-bridging allows deep blue electro-luminescence, highlighting the importance of the choice of the functional groups used for macrocyclization.

On the non-bonding valence band and the electronic properties of poly(triazine imide), a graphitic carbon nitride.

Graphitic carbon nitrides are covalently-bonded, layered, and crystalline semiconductors with high thermal and oxidative stability. These properties make graphitic carbon nitrides potentially useful in overcoming the limitations of 0D molecular and 1D polymer semiconductors. In this contribution, we study structural, vibrational, electronic and transport properties of nano-crystals of poly(triazine-imide) (PTI) derivatives with intercalated Li- and Br-ions and without intercalates. Intercalation-free poly(triazine-imide) (PTI-IF) is corrugated or AB stacked and partially exfoliated. We find that the lowest energy electronic transition in PTI is forbidden due to a non-bonding uppermost valence band and that its electroluminescence from the π-π* transition is quenched which severely limits their use as emission layer in electroluminescent devices. THz conductivity in nano-crystalline PTI is up to eight orders of magnitude higher than the macroscopic conductivity of PTI films. We find that the charge carrier density of PTI nano-crystals is among the highest of all known intrinsic semiconductors, however, macroscopic charge transport in films of PTI is limited by disorder at crystal-crystal interfaces. Future device applications of PTI will benefit most from single crystal devices that make use of electron transport in the lowest, π-like conduction band.

The impact of plasmonic electrodes on the photocarrier extraction of inverted organic bulk heterojunction solar cells.

Nano-patterning the semiconducting photoactive layer/back electrode interface of organic photovoltaic devices is a widely accepted approach to enhance the power conversion efficiency through the exploitation of numerous photonic and plasmonic effects. Yet, nano-patterning the semiconductor/metal interface leads to intertwined effects that impact the optical as well as the electrical characteristic of solar cells. In this work we aim to disentangle the optical and electrical effects of a nano-structured semiconductor/metal interface on the device performance. For this, we use an inverted bulk heterojunction P3HT:PCBM solar cell structure, where the nano-patterned photoactive layer/back electrode interface is realized by patterning the active layer with sinusoidal grating profiles bearing a periodicity of 300 nm or 400 nm through imprint lithography while varying the photoactive layer thickness (L PAL ) between 90 and 400 nm. The optical and electrical device characteristics of nano-patterned solar cells are compared to the characteristics of control devices, featuring a planar photoactive layer/back electrode interface. We find that patterned solar cells show for an enhanced photocurrent generation for a L PAL above 284 nm, which is not observed when using thinner active layer thicknesses. Simulating the optical characteristic of planar and patterned devices through a finite-difference time-domain approach proves for an increased light absorption in presence of a patterned electrode interface, originating from the excitation of propagating surface plasmon and dielectric waveguide modes. Evaluation of the external quantum efficiency characteristic and the voltage dependent charge extraction characteristics of fabricated planar and patterned solar cells reveals, however, that the increased photocurrents of patterned devices do not stem from an optical enhancement but from an improved charge carrier extraction efficiency in the space charge limited extraction regime. Presented findings clearly demonstrate that the improved charge extraction efficiency of patterned solar cells is linked to the periodic surface corrugation of the (back) electrode interface. Supplementary Information: The online version contains supplementary material available at 10.1007/s00339-023-06492-6.

Large area inkjet-printed metal halide perovskite LEDs enabled by gas flow assisted drying and crystallization.

We demonstrate the upscaling of inkjet-printed metal halide perovskite light-emitting diodes. To achieve this, the drying process, critical for controlling the crystallization of the perovskite layer, was optimized with an airblade-like slit nozzle in a gas flow assisted vacuum drying step. This yields large, continuous perovskite layers in light-emitting diodes with an active area up to 1600 mm2.

Antiaromatic Covalent Organic Frameworks Based on Dibenzopentalenes.

Despite their inherent instability, 4n π systems have recently received significant attention due to their unique optical and electronic properties. In dibenzopentalene (DBP), benzanellation stabilizes the highly antiaromatic pentalene core, without compromising its amphoteric redox behavior or small HOMO-LUMO energy gap. However, incorporating such molecules in organic devices as discrete small molecules or amorphous polymers can limit the performance (e.g., due to solubility in the battery electrolyte solution or low internal surface area). Covalent organic frameworks (COFs), on the contrary, are highly ordered, porous, and crystalline materials that can provide a platform to align molecules with specific properties in a well-defined, ordered environment. We synthesized the first antiaromatic framework materials and obtained a series of three highly crystalline and porous COFs based on DBP. Potential applications of such antiaromatic bulk materials were explored: COF films show a conductivity of 4 × 10-8 S cm-1 upon doping and exhibit photoconductivity upon irradiation with visible light. Application as positive electrode materials in Li-organic batteries demonstrates a significant enhancement of performance when the antiaromaticity of the DBP unit in the COF is exploited in its redox activity with a discharge capacity of 26 mA h g-1 at a potential of 3.9 V vs. Li/Li+. This work showcases antiaromaticity as a new design principle for functional framework materials.

Vortex dynamics in the two-dimensional BCS-BEC crossover.

The Bardeen-Cooper-Schrieffer (BCS) condensation and Bose-Einstein condensation (BEC) are the two limiting ground states of paired Fermion systems, and the crossover between these two limits has been a source of excitement for both fields of high temperature superconductivity and cold atom superfluidity. For superconductors, ultra-low doping systems like graphene and LixZrNCl successfully approached the crossover starting from the BCS-side. These superconductors offer new opportunities to clarify the nature of charged-particles transport towards the BEC regime. Here we report the study of vortex dynamics within the crossover using their Hall effect as a probe in LixZrNCl. We observed a systematic enhancement of the Hall angle towards the BCS-BEC crossover, which was qualitatively reproduced by the phenomenological time-dependent Ginzburg-Landau (TDGL) theory. LixZrNCl exhibits a band structure free from various electronic instabilities, allowing us to achieve a comprehensive understanding of the vortex Hall effect and thereby propose a global picture of vortex dynamics within the crossover. These results demonstrate that gate-controlled superconductors are ideal platforms towards investigations of unexplored properties in BEC superconductors.

Hybrid fabrication of multimodal intracranial implants for electrophysiology and local drug delivery.

New fabrication approaches for mechanically flexible implants hold the key to advancing the applications of neuroengineering in fundamental neuroscience and clinic. By combining the high precision of thin film microfabrication with the versatility of additive manufacturing, we demonstrate a straight-forward approach for the prototyping of intracranial implants with electrode arrays and microfluidic channels. We show that the implant can modulate neuronal activity in the hippocampus through localized drug delivery, while simultaneously recording brain activity by its electrodes. Moreover, good implant stability and minimal tissue response are seen one-week post-implantation. Our work shows the potential of hybrid fabrication combining different manufacturing techniques in neurotechnology and paves the way for a new approach to the development of multimodal implants.

Size Effects of the Anions in the Ionothermal Synthesis of Carbon Nitride Materials.

Semiconducting carbon nitride polymers are used in metal-free photocatalysts and in opto-electronic devices. Conventionally, they are obtained using thermal and ionothermal syntheses in inscrutable, closed systems and therefore, their condensation behavior is poorly understood. Here, the synthetic protocols and properties are compared for two types of carbon nitride materials - 2D layered poly(triazine imide) (PTI) and hydrogen-bonded melem hydrate - obtained from three low-melting salt eutectics taken from the systematic series of the alkali metal halides: LiCl/KCl, LiBr/KBr, and LiI/KI. The size of the anion plays a significant role in the formation process of the condensed carbon nitride polymers, and it suggests a strong templating effect. The smaller anions (chloride and bromide) become incorporated into triazine (C3 N3 )-based PTI frameworks. The larger iodide does not stabilize the formation of a triazine-based polymer, but instead it leads to the formation of the heptazine (C6 N7 )-based hydrogen-bonded melem hydrate as the main crystalline phase. Melem hydrate, obtained as single-crystalline powders, was compared with PTI in photocatalytic hydrogen evolution from water and in an OLED device. Further, the emergence of each carbon nitride species from its corresponding salt eutectic was rationalized via density functional theory calculations. This study highlights the possibilities to further tailor the properties of eutectic salt melts for ionothermal synthesis of organic functional materials.

Optimized Synthesis of Solution-Processable Crystalline Poly(Triazine Imide) with Minimized Defects for OLED Application.

Poly(triazine imide) (PTI) is a highly crystalline semiconductor, and though no techniques exist that enable synthesis of macroscopic monolayers of PTI, it is possible to study it in thin layer device applications that are compatible with its polycrystalline, nanoscale morphology. We find that the by-product of conventional PTI synthesis is a C-C carbon-rich phase that is detrimental for charge transport and photoluminescence. An optimized synthetic protocol yields a PTI material with an increased quantum yield, enabled photocurrent and electroluminescence. We report that protonation of the PTI structure happens preferentially at the pyridinic N atoms of the triazine rings, is accompanied by exfoliation of PTI layers, and contributes to increases in quantum yield and exciton lifetimes. This study describes structure-property relationships in PTI that link the nature of defects, their formation, and how to avoid them with the optical and electronic performance of PTI. On the basis of our findings, we create an OLED prototype with PTI as the active, metal-free material.

The Schottky-Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening.

A comprehensive understanding of the energy level alignment mechanisms between two-dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic properties to the requirements of device applications. Here, we use angle-resolved direct and inverse photoelectron spectroscopy to unravel the key factors that determine the level alignment at interfaces between a monolayer of the prototypical 2D semiconductor MoS2 and conductor, semiconductor, and insulator substrates. For substrate work function (Φsub) values below 4.5 eV we find that Fermi level pinning occurs, involving electron transfer to native MoS2 gap states below the conduction band. For Φsub above 4.5 eV, vacuum level alignment prevails but the charge injection barriers do not strictly follow the changes of Φsub as expected from the Schottky-Mott rule. Notably, even the trends of the injection barriers for holes and electrons are different. This is caused by the band gap renormalization of monolayer MoS2 by dielectric screening, which depends on the dielectric constant (εr) of the substrate. Based on these observations, we introduce an expanded Schottky-Mott rule that accounts for band gap renormalization by εr -dependent screening and show that it can accurately predict charge injection barriers for monolayer MoS2. It is proposed that the formalism of the expanded Schottky-Mott rule should be universally applicable for 2D semiconductors, provided that material-specific experimental benchmark data are available.

Type-I Energy Level Alignment at the PTCDA-Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement.

Van der Waals heterostructures consisting of 2D semiconductors and conjugated molecules are of increasing interest because of the prospect of a synergistic enhancement of (opto)electronic properties. In particular, perylenetetracarboxylic dianhydride (PTCDA) on monolayer (ML)-MoS2 has been identified as promising candidate and a staggered type-II energy level alignment and excited state interfacial charge transfer have been proposed. In contrast, it is here found with inverse and direct angle resolved photoelectron spectroscopy that PTCDA/ML-MoS2 supported by insulating sapphire exhibits a straddling type-I level alignment, with PTCDA having the wider energy gap. Photoluminescence (PL) and sub-picosecond transient absorption measurements reveal that resonance energy transfer, i.e., electron-hole pair (exciton) transfer, from PTCDA to ML-MoS2 occurs on a sub-picosecond time scale. This gives rise to an enhanced PL yield from ML-MoS2 in the heterostructure and an according overall modulation of the photoresponse. These results underpin the importance of a precise knowledge of the interfacial electronic structure in order to understand excited state dynamics and to devise reliable design strategies for optimized optoelectronic functionality in van der Waals heterostructures.

High performance organic light-emitting diodes employing ITO-free and flexible TiO x /Ag/Al:ZnO electrodes.

The broad application of flexible optoelectronic devices is still hampered by the lack of an ITO-free and highly flexible transparent electrode. Dielectric/metal/dielectric (DMD) transparent electrodes are promising candidates to replace ITO, especially in flexible devices due to their mechanical stability to bending, high optical transmittance and low sheet resistance (<6 Ω sq-1). This paper reports on organic light emitting diodes (OLEDs) employing a DMD electrode, specifically TiO x /Ag/Al:ZnO (doped with 2 wt% Al2O3) fabricated by sputter deposition, together with a solution-processed organic polymeric emitting layer. The electrodes were sputtered without substrate heating on rigid glass and flexible polyethylene terephthalate (PET). The results showed that the OLED devices on the DMD electrodes outperform the OLEDs on commercial ITO substrates in terms of maximum luminance as well as current efficacy. Specifically, DMD-based devices achieve up to 30% higher current efficacy on glass and up to 260% higher efficacy on PET, as compared to the ITO-based reference devices. Maximum luminance reaches up to 100 000 cd m-2 for the DMD-based OLEDs on glass and 43 000 cd m-2 for those on PET. This performance is due to the low sheet resistance of the electrodes combined with efficient light outcoupling and shows the potential of DMDs to replace ITO in optoelectronic devices. This outstanding type of optoelectronic device paves the way for the future high throughput production of flexible display and photovoltaic devices.

An Organic Borate Salt with Superior p-Doping Capability for Organic Semiconductors.

Molecular doping allows enhancement and precise control of electrical properties of organic semiconductors, and is thus of central technological relevance for organic (opto-) electronics. Beyond single-component molecular electron acceptors and donors, organic salts have recently emerged as a promising class of dopants. However, the pertinent fundamental understanding of doping mechanisms and doping capabilities is limited. Here, the unique capabilities of the salt consisting of a borinium cation (Mes2B+; Mes: mesitylene) and the tetrakis(penta-fluorophenyl)borate anion [B(C6F5)4]- is demonstrated as p-type dopant for polymer semiconductors. With a range of experimental methods, the doping mechanism is identified to comprise electron transfer from the polymer to Mes2B+, and the positive charge on the polymer is stabilized by [B(C6F5)4]-. Notably, the former salt cation leaves during processing and is not present in films. The anion [B(C6F5)4]- even enables the stabilization of polarons and bipolarons in poly(3-hexylthiophene), not yet achieved with other molecular dopants. From doping studies with high ionization energy polymer semiconductors, the effective electron affinity of Mes2B+[B(C6F5)4]- is estimated to be an impressive 5.9 eV. This significantly extends the parameter space for doping of polymer semiconductors.

Gentle plasma process for embedded silver-nanowire flexible transparent electrodes on temperature-sensitive polymer substrates.

The present study investigates processing routes to obtain highly conductive and transparent electrodes of silver nanowires (AgNWs) on flexible polyethylene terephthalate (PET) substrate. The AgNWs are embedded into a UV-curable polymer to reduce the electrode roughness and enhance its stability. For the purpose of device integration, the AgNWs must partially protrude from the polymer, which demands that their embedding is followed by a transfer step from a host substrate to the final substrate. Since the AgNWs require some sort of curing (thermal or plasma) to reduce the electrode sheet resistance, a thermally stable host substrate is generally used. This study shows that both thermally stable polyimide, as well as temperature-sensitive PET can be used as flexible host substrates, combined with a gentle, AgNW plasma curing. This is possible by adjusting the fabrication sequence to accommodate the plasma curing step, depending on the host substrate. As a result, embedded AgNW electrodes, transferred from polyimide-to-PET and from PET-to-PET are obtained, with optical transmittance of ∼80% (including the substrate) and sheet resistance of ∼13 Ω/sq., similar to electrodes transferred from glass-to-glass substrates. The embedded AgNW electrodes on PET show superior performance in bending tests, as compared to indium-tin-oxide electrodes. The introduced approach, involving low-cost flexible substrates, AgNW spray-coating and plasma curing, is compatible with high-throughput, roll-to-roll processing.

Modulating the luminance of organic light-emitting diodes via optical stimulation of a photochromic molecular monolayer at transparent oxide electrode.

Self-assembled monolayers (SAMs) deposited on bottom electrodes are commonly used to tune charge carrier injection or blocking in optoelectronic devices. Beside the enhancement of device performance, the fabrication of multifunctional devices in which the output can be modulated by multiple external stimuli remains a challenging target. In this work, we report the functionalization of an indium tin oxide (ITO) electrode with a SAM of a diarylethene derivative designed for optically control the electronic properties. Following the demonstration of dense SAM formation and its photochromic activity, as a proof-of-principle, an organic light-emitting diode (OLED) embedding the light-responsive SAM-covered electrode was fabricated and characterized. Optically addressing the two-terminal device by irradiation with ultraviolet light doubles the electroluminescence. The original value can be restored reversibly by irradiation with visible light. This expanded functionality is based on the photoinduced modulation of the electronic structure of the diarylethene isomers, which impact the charge carriers' confinement within the emissive layer. This approach could be successfully exploited in the field of opto-communication technology, for example to fabricate opto-electronic logic circuits.

Potential modulations in flatland: near-infrared sensitization of MoS2 phototransistors by a solvatochromic dye directly tethered to sulfur vacancies.

Near-infrared sensitization of monolayer MoS2 is here achieved via the covalent attachment of a novel heteroleptic nickel bis-dithiolene complex into sulfur vacancies in the MoS2 structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitizer dye centred around 1300 nm (0.95 eV), well below the bandgap of MoS2 (2.1 eV), corresponding to the excitation of the monoanionic dithiolene complex. A mechanism of conductivity enhancement is proposed based on a photo-induced flattening of the corrugated energy landscape present at sulfur vacancy defect sites within the MoS2 due to a dipole change within the dye molecule upon photoexcitation. This method of sensitization might be readily extended to other functional molecules that can impart a change to the dielectric environment at the MoS2 surface under stimulation, thereby extending the breadth of detector applications for MoS2 and other transition metal dichalcogenides.

Versatile and Scalable Strategy To Grow Sol-Gel Derived 2H-MoS2 Thin Films with Superior Electronic Properties: A Memristive Case.

Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), show peculiar chemical/physical properties that enable their use in applications ranging from micro- and nano-optoelectronics to surface catalysis, gas and light detection, and energy harvesting/production. One main limitation to fully harness the potential of MoS2 is given by the lack of scalable and low environmental impact synthesis of MoS2 films with high uniformity, hence setting a significant challenge for industrial applications. In this work, we develop a versatile and scalable sol-gel-derived MoS2 film fabrication by spin coating deposition of an aqueous sol on different technologically relevant, flexible substrates with annealing at low temperatures (300 °C) and without the need of sulfurization and/or supply of hydrogen as compared to cutting-edge techniques. The electronic and physical properties of the MoS2 thin films were extensively investigated by means of surface spectroscopy and structural characterization techniques. Spatially homogenous nanocrystalline 2H-MoS2 thin films were obtained exhibiting high chemical purity and excellent electronic properties such as an energy band gap of 1.35 eV in agreement with the 2H phase of the MoS2, and a density of states that corresponds to the n-type character expected for high-quality 2H-MoS2. The potential use of sol-gel-grown MoS2 as the candidate material for electronic applications was tested via electrical characterization and demonstrated via the reversible switching in resistivity typical for memristors with a measured ON-OFF ratio ≥102. The obtained results highlight that the novel low-cost fabrication method has a great potential to promote the use of high-quality MoS2 in technological and industrial-relevant scalable applications.