ABSTRACT
In this study, we prepared three benzo[ghi]perylenetriimide (BPTI) conjugated molecules as electron-transporting surface-modifying layers for polymer solar cells (PSCs). These three BPTI derivatives differed in the nature of their terminal functionalities, featuring butylamine (C3NH2), propylammonium iodide (C3NH3I), and butyldimethylamine (C3DMA) units, respectively. We evaluated the optoelectronic properties of PTB7-Th: PC71BM blends modified with these interfacial layers, as well as the performance of resulting PSCs. We used UV-Vis spectroscopy, atomic force microscopy, surface energy analysis, ultraviolet photoelectron spectroscopy, and photoelectric flow measurements to examine the phenomena behind the changes in the optoelectronic behavior of these blend films. The presence of a BPTI derivative changed the energy band alignment at the ZnO-active layer interface, leading to the ZnO film behaving more efficiently as an electron-extraction electrode. Modifying the ZnO surface with the BPTI-C3NH3I derivative resulted in a best power conversion efficiency (PCE) of 10.2 ± 0.53% for the PTB7-Th:PC71BM PSC (cf. PCE of the control device of 9.1 ± 0.13%). In addition, modification of a PM6:Y6:PCBM PSC with the BPTI-C3NH3I derivative increased its PCE from 15.6 ± 0.25% to 16.5 ± 0.18%. Thus, BPTI derivatives appear to have potential as IFLs when developing high-performance PSCs, and might also be applicable in other optoelectronic devices.
ABSTRACT
In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 °C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferrite-thin-film/indium-tin-oxide on p+-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I-V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.
