ABSTRACT
Interface engineering has been extensively used in perovskite light-emitting diodes (PeLEDs), which proves to be an effective and intelligent approach for surface defect passivation. However, the existing passivation strategy is restricted to the solution process, which results in poor compatibility with vapor-deposited PeLEDs and moderate controllability. Here, we propose a dual-interface modification strategy to facilitate the performance improvement of vapor-deposited all-inorganic red PeLEDs. An ultrathin phenylethanamine bromide (PEABr) layer is introduced to both the upper and lower interfaces of the vapor-deposited perovskite emission layer by vapor deposition. The vapor deposition of the PEABr with fine-controlled film thickness is a reliable and simple process and compatible with vapor-deposited all-inorganic PeLEDs. The dual-interface modification plays an observable role in manipulating the crystallization and surface morphology of the CsPbBrI2 film, which is of significance for the improvement of the PeLEDs' performance. As a result, the red PeLEDs achieve a maximum luminance and external quantum efficiency of 2338 cd/m2 and 1.75%, corresponding to enhancements of 2.75 and 5.25 times compared with those of PeLEDs without PEABr. This approach paves the way to high-efficiency all-evaporated all-inorganic PeLEDs.
