Short-pulse-induced solute migration in the C49H43ClO6 + 1,2 dichloroethane solution.

Using the Z-scan technique with 532 nm 19 ps laser pulses separated by two time intervals τp-p's (0.1 s and 1.0 s) sandwiching the mass diffusion time constant of the C49H43ClO6 + 1,2 dichloroethane solution, we investigate short-pulse-induced solute migration in the sample by measuring its transmittance change with τp-p variation. Preparing the sample at two concentrations, we find that τp-p reduction, from 1.0 s to 0.1 s, increases its transmittance when input pulse energy ε1 exceeds a threshold εT, which is lower for the dilute solution than the concentrated one. At two ε1's above εT for the dilute solution, τp-p-reduction-induced transmittance increase in the dilute solution, as compared to that in the concentrated solution, is more at the lower ε1 and less at the higher ε1. This differs from continuous-wave-driven thermal diffusion which always causes a larger transmittance increase in the concentrated solution by inducing a larger temperature gradient. From this study, we predict that solute migration induced by short pulses at 1064 nm is one of the undesired heating effects occurring when this solution is used to simultaneously Q-switch and mode-lock Nd:YAG lasers.

The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures.

The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-N(+) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Gamma to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but proportional to the product of the critical field and the number of the photo-excited carriers.