ABSTRACT
The metal-semiconductor heterojunction is imperative for the realization of electrically driven nanolasers for chip-level platforms. Progress in developing such nanolasers has hitherto rarely been realized, however, because of their complexity in heterojunction fabrication and the need to use noble metals that are incompatible with microelectronic manufacturing. Most plasmonic nanolasers lase either above a high threshold (101 -103 MW cm-2 ) or at a cryogenic temperature, and lasing is possible only after they are removed from the substrate to avoid the large ohmic loss and the low modal reflectivity, making monolithic fabrication impossible. Here, for the first time, record-low-threshold, room-temperature ultraviolet (UV) lasing of plasmon-coupled core-shell nanowires that are directly grown on silicon is demonstrated. The naturally formed core-shell metal-semiconductor heterostructure of the nanowires leads to a 100-fold improvement in growth density over previous results. This unprecedentedly high nanowire density creates intense plasmonic resonance, which is outcoupled to the resonant Fabry-Pérot microcavity. By boosting the emission strength by a factor of 100, the hybrid photonic-plasmonic system successfully facilitates a record-low laser threshold of 12 kW cm-2 with a spontaneous emission coupling factor as high as ≈0.32 in the 340-360 nm range. Such architecture is simple and cost-competitive for future UV sources in silicon integration.
ABSTRACT
Continuous-wave (CW) room-temperature (RT) laser operation with low energy consumption is an ultimate goal for electrically driven lasers. A monolithically integrated perovskite laser in a chip-level fiber scheme is ideal. However, because of the well-recognized air and thermal instabilities of perovskites, laser action in a perovskite has mostly been limited to either pulsed or cryogenic-temperature operations. Most CW laser operations at RT have had poor durability. Here, crystal fibers that have robust and high-heat-load nature are shown to be the key to enabling the first demonstration of ultralow-threshold CW RT laser action in a compact, monolithic, and inexpensive crystal fiber/nanoperovskite hybrid architecture that is directly pumped with a 405 nm diode laser. Purcell-enhanced light-matter coupling between the atomically smooth fiber microcavity and the perovskite nanocrystallites gain medium enables a high Q (≈1500) and a high ß (0.31). This 762 nm laser outperforms previously reported structures with a record-low threshold of 132 nW and an optical-to-optical slope conversion efficiency of 2.93%, and it delivers a stable output for CW and RT operation. These results represent a significant advancement toward monolithic all-optical integration.
ABSTRACT
We demonstrate direct evidence for the first realization of atomically smooth sapphire crystalline fiber cores with a surface variation of only ~1.9 Å. The hybrid glass-clad crystalline cores were grown by a laser-based fiber drawing technique. Because of the improvement in crystal fiber quality, we were able, for the first time, to comprehensively and quantitatively elucidate the correlation between fiber nanostructure and optical loss. We also experimentally demonstrated that high-temperature treatment has a significant impact on defect relaxation and promotes excellent crystallinity, and hence enables low-loss optical wave guiding. The experimentally measured propagation losses in the order of 0.01-0.1 dB/cm are the lowest ever reported among conventional Ti:sapphire channel waveguides and ultrafast-laser-inscribed waveguides, and agree well with the theory. Through experiments and numerical calculation, we have demonstrated that low threshold and high efficiency of Ti:sapphire crystal fiber lasers are possible with the atomic-level roughness, low-loss propagation, and high crystallinity of the Ti:sapphire crystalline core.
ABSTRACT
In many biomedical applications, broad full-color emission is important, especially for wavelengths below 450 nm, which are difficult to cover via supercontinuum generation. Single-crystalline-core sapphires with defect-driven emissions have potential roles in the development of next-generation broadband light sources because their defect centers demonstrate multiple emission bands with tailored ligand fields. However, the inability to realize high quantum yields with high crystallinity by conventional methods hinders the applicability of ultra-broadband emissions. Here, we present how an effective one-step fiber-drawing process, followed by a simple and controllable thermal treatment, enables a low-loss, full-color, and crystal fiber-based generation with substantial color variability. The broad spectrum extends from 330 nm, which is over 50 nm further into the UV region than that in previously reported results. The predicted submicrometer spatial resolutions demonstrate that the defect-ligand fields are potentially beneficial for achieving in vivo cellular tomography. It is also noteworthy that the efficiency of the milliwatt-level full-color generation, with an optical-to-optical efficiency of nearly 5%, is the highest among that of the existing active waveguide schemes. In addition, direct evidence from high-resolution transmission electron microscopy together with electron energy loss spectroscopy and crystal-field ligands reveals an excellent crystalline core, atomically defined core/cladding interfacial roughness, and significant enhancements in new laser-induced electronic defect levels. Our work suggests an inexpensive, facile, and highly scalable route toward achieving cellular-resolution tomographic imaging and represents an important step in the development of endoscope-compatible diagnostic devices.
ABSTRACT
Glass-clad Cr4+:YAG crystal fiber is demonstrated by a codrawing laser-heated pedestal growth method. As much as 2.45 mW of superwideband amplified spontaneous emission (ASE) is generated in the optical fiber communication band with a 3-dB width of 240 nm. The simulation indicates that the ASE power could be in excess of 20 dBm for a 5-microm-diameter core at a pump power of 2.5 W.