ABSTRACT
GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski-Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 10(10) cm(-2) and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 and 1.035 µm, depending on the exact conditions. Using a stack of such QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K.
