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1.
Appl Opt ; 56(8): 2142-2149, 2017 Mar 10.
Article in English | MEDLINE | ID: mdl-28375299

ABSTRACT

Transparent glass-ceramics (GCs) containing Co:Mg(Al,Ga)2O4 nanocrystals (mean diameter of 7-9 nm) are synthesized by heat treatments at 850-950°C from magnesium aluminosilicate glass nucleated by TiO2 and doped with Ga2O3 and CoO. The GCs exhibit a broadband A24(F4)→T14(F4) absorption due to the Co2+ ions, low saturation fluence (∼0.5 J/cm2), fast recovery time of initial absorption (∼300 ns), and high laser damage threshold (∼20 J/cm2). They are used for passive Q-switching of a diode side-pumped Er,Yb:glass laser generating 3.1 mJ/20 ns pulses (peak power, 155 kW) at 1535 nm with a TEM00 output mode. The Q-switching performance of the Co:Mg(Al,Ga)2O4-based GCs is compared with that for various Co2+-doped GCs and Co:MgAl2O4 single crystal. The prepared GCs are promising for further applications in passively Q-switched Er:YAG and other Er crystalline (or ceramic) lasers.

2.
Appl Opt ; 55(18): 4877-87, 2016 Jun 20.
Article in English | MEDLINE | ID: mdl-27409113

ABSTRACT

A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single- and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 µJ. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n=1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2±0.2 and 7±1 MW/cm2, respectively. When using Cr2+:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 µJ pulses at a repetition rate of 14.8 kHz.

3.
Appl Opt ; 55(21): 5505-12, 2016 Jul 20.
Article in English | MEDLINE | ID: mdl-27463897

ABSTRACT

We report on the development of novel saturable absorbers for erbium lasers based on transparent glass-ceramics (GCs) containing a mixture of cobalt-doped ß-willemite, Co2+:ß-Zn2SiO4, and zinc oxide, Co2+:ZnO, nanosized (10-14 nm) crystals. The structure of the parent glass and GCs is studied by x-ray diffraction, differential scanning calorimetry, transmission electron microscopy, and Raman spectroscopy. Variations of absorption spectra with heat-treatment reveal that Co2+ ions from the parent glass enter the crystals of ZnO and ß-willemite. GCs are characterized by a broad absorption band due to the A24(F4)→T14(F4) transition of Co2+ ions in tetrahedral sites spanning up to ∼1.74 µm, relatively low saturation fluence, FS=0.75 J/cm2 at 1.54 µm, short recovery time, τ=830 ns, and high laser damage threshold, ∼14 J/cm2. By using the developed GCs in a diode-side-pumped Er, Yb:glass laser, 0.77 mJ/45 ns pulses are generated.

4.
Opt Lett ; 41(11): 2620-3, 2016 Jun 01.
Article in English | MEDLINE | ID: mdl-27244429

ABSTRACT

A diode-pumped Yb:KLu(WO4)2 microchip laser passively Q-switched by a Cr4+:YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 µJ at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M2<1.05. Yb:KLu(WO4)2 is very promising for ultrathin sub-ns microchip lasers.

5.
Appl Opt ; 55(14): 3757-63, 2016 May 10.
Article in English | MEDLINE | ID: mdl-27168288

ABSTRACT

A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns/9 µJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns/10.4 µJ/8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.

6.
Appl Opt ; 54(15): 4820-2, 2015 May 20.
Article in English | MEDLINE | ID: mdl-26192520

ABSTRACT

We addressed errors found in our measurements of thermo-optic coefficients and thermal coefficients of the optical path (TCOP) in tetragonal vanadates, YVO(4) and GdVO(4) [Appl. Opt.52, 698 (2013)]. Modified thermo-optic dispersion formulas are presented for these laser host crystals.

7.
Opt Express ; 17(26): 23536-43, 2009 Dec 21.
Article in English | MEDLINE | ID: mdl-20052061

ABSTRACT

A comparative study of thermal lensing effect in diode laser pumped Ng- and Np-cut Nd:KGd(WO4)2 (KGW) laser crystals was performed for laser emission polarized along the principle refractive axis, Nm. The thermal lens in the Ng-cut Nd: KGW was found to be weakly astigmatic with a positive refractive power for both the Nm- and Np-directions. For Np -cut Nd:KGW, strong astigmatism was observed and the refractive powers in the Ng- and Nm-directions had opposing signs. The degree of astigmatism was found to be considerably weaker for the Ng-cut Nd:KGW in comparison with the Np-cut one: 0.35 dptr/(W/cm2) and 2.85 dptr/(W/cm2), respectively. The ratio of the thermal lens refractive powers in the planes parallel and perpendicular to the laser emission polarisation were measured as +1.4 and -0.425 for Ng- and Np-cut Nd:KGW respectively.


Subject(s)
Lasers, Solid-State , Lenses , Semiconductors , Computer-Aided Design , Equipment Design , Equipment Failure Analysis , Temperature
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